Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Mizuki Yamanaka"'
Autor:
Makoto Miyoshi, Mizuki Yamanaka, Takashi Egawa, Narihito Okada, Kazuyuki Tadatomo, Tetsuya Takeuchi
Publikováno v:
Materials Research Express, Vol 8, Iss 2, p 025906 (2021)
Metalorganic chemical vapor deposition of approximately 300-nm thick epitaxial AlInN films with different alloy compositions was performed using a semi-relaxed c -plane GaInN template as an underlying substrate. The GaInN template consisted of a Ga _
Externí odkaz:
https://doaj.org/article/37b4bba97a74491082acd8295769be73
Autor:
Yuri Yamamoto, Masae Sakuma, Mizuki Yamanaka, Asami Matsushita, Satomi Tanaka, Hidekazu Arai, Toshihiko Asai
Publikováno v:
Journal of Atherosclerosis and Thrombosis
Aim: This study aimed to evaluate the effect of diet on serum lipids and to assess the effectiveness of long-term dietary therapy for hypertriglyceridemia. Methods: Seventy-nine patients (34 males and 45 females) with hypertriglyceridemia were enroll
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d9c60ba9919a61d052752502de9ac8b8
http://europepmc.org/articles/PMC6308261
http://europepmc.org/articles/PMC6308261
Publikováno v:
Journal of Crystal Growth. 506:40-44
300-nm-thick AlInN films with InN molar fractions ranging from 0.114 to 0.197 were grown by metalorganic chemical vapor deposition on c-plane GaN on sapphire. It was confirmed that no lattice relaxation occurred for samples with InN molar fractions f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::30b68b403b5cf28812bd07a53c27de57
https://doi.org/10.1016/j.jcrysgro.2018.09.049
https://doi.org/10.1016/j.jcrysgro.2018.09.049
Autor:
Somik V. Lall, Rawaa Harati, Marko Olavi Rissanen, Yuri M. Dikhanov, Mizuki Yamanaka, Shohei Nakamura, William Vigil Oliver, Nada Hamadeh
This paper compares costs of living across world cities. The International Comparison Program (ICP) reports price levels across world economies in its calculation of purchasing power parity through an extensive scale of price data collection and rigo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2c875d1ad32b048ceecb83b72a207dc3
https://hdl.handle.net/10986/36152
https://hdl.handle.net/10986/36152
Publikováno v:
2019 Compound Semiconductor Week (CSW).
Si-doped epitaxial AlInN films were grown on a GaN/sapphire template using a SiH 4 introduction as a dopant gas in an MOCVD process. SIMS analyses and $C-V$ measurements were carried out to confirm their Si atoms and ionized impurity concentrations.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ed6265c4c360fd365695a503357432a
https://doi.org/10.1109/iciprm.2019.8819059
https://doi.org/10.1109/iciprm.2019.8819059
Publikováno v:
Light-Emitting Devices, Materials, and Applications.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8625ec55c20c7c0e1aa4d9bfeb1236e
https://doi.org/10.1117/12.2506760
https://doi.org/10.1117/12.2506760
Autor:
Yuri M. Dikhanov, William Vigil Oliver, Nada Hamadeh, Marko Olavi Rissanen, Mizuki Yamanaka, Somik V. Lall, Shohei Nakamura, Rawaa Harati
Publikováno v:
Is Living in African Cities Expensive?
Although several studies have examined why overall price levels are higher in richer countries, little is known about whether there is a similar relationship at the urban and city level across countries. This paper compares the price levels of cities
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bd2c3d45588224fd49b69bd8e063148d
https://hdl.handle.net/10986/31546
https://hdl.handle.net/10986/31546
Autor:
Narihito Okada, Kazuyuki Tadatomo, Takashi Egawa, Makoto Miyoshi, Mizuki Yamanaka, Tetsuya Takeuchi
Publikováno v:
Materials Research Express. 8:025906
Metalorganic chemical vapor deposition of approximately 300-nm thick epitaxial AlInN films with different alloy compositions was performed using a semi-relaxed c-plane GaInN template as an underlying substrate. The GaInN template consisted of a Ga0.9
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bffb02964f02b872b23eb7c557f53310
https://doi.org/10.1088/2053-1591/abe250
https://doi.org/10.1088/2053-1591/abe250
Publikováno v:
Journal of Vacuum Science & Technology B. 38:052205
In this study, Si-doped conductive AlInN films with a thickness of 300 nm were grown nearly lattice-matched to c-plane GaN-on-sapphire templates by metalorganic chemical vapor deposition. A high net donor concentration of approximately 1 × 1019 cm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4659bd80d3274830f9164a8a82d7ae64
https://doi.org/10.1116/6.0000284
https://doi.org/10.1116/6.0000284
Publikováno v:
Japanese Journal of Applied Physics. 58:SC1006
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cbc07fadd7f66862517de32185894d7
https://doi.org/10.7567/1347-4065/ab040c
https://doi.org/10.7567/1347-4065/ab040c