Zobrazeno 1 - 10
of 139
pro vyhledávání: '"Mizuho Morita"'
Autor:
Yuki Miyata, Yasunori Nakamukai, Cassia Tiemi Azevedo, Ayano Tsuchida, Miho Morita, Yasushi Oshikane, Junichi Uchikoshi, Kentaro Kawai, Kenta Arima, Mizuho Morita
Publikováno v:
Micro and Nanostructures. 166:207228
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60dcc10780059169a7321cd11c9f3b16
https://doi.org/10.1016/j.micrna.2022.207228
https://doi.org/10.1016/j.micrna.2022.207228
Autor:
Daichi Mori, Hiroshi Oka, Takuji Hosoi, Kentaro Kawai, Mizuho Morita, Crumlin, Ethan J., Zhi Liu, Heiji Watanabe, Arima, Kenta
Publikováno v:
Journal of Applied Physics; 9/7/2016, Vol. 120 Issue 9, p1-10, 10p, 4 Diagrams, 7 Graphs
Autor:
Kentaro Kawai, Miho Morita, Yasunori Nakamukai, Mizuho Morita, Cassia Tiemi Azevedo, Junichi Uchikoshi, Kenta Arima, Yuki Miyata
Publikováno v:
Microelectronic Engineering. 180:93-95
A new method to improve the thickness uniformity of a silicon-on-insulator layer in a defined area by photoetching with N -fluoropyridinium salts using a projector was proposed. The method involved initial calculation of the red–green–blue tone d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb587372fadb4eb9f99e48b7bddd7b50
https://doi.org/10.1016/j.mee.2017.06.008
https://doi.org/10.1016/j.mee.2017.06.008
Autor:
Mizuho Morita, Kenta Arima, Yasuhisa Sano, Kazuto Yamauchi, Takeshi Okamoto, Atsushi Mura, Tatsuya Kawase, Kentaro Kawai, Yusuke Saito
Publikováno v:
ChemElectroChem. 2:1656-1659
Control of the microroughness of Ge surfaces is required to realize field-effect transistors with high performances. We propose a novel surface-flattening process for Ge that involves the preferential transformation of surface protrusions on Ge into
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19bda73877031343a4de4b8c8139d1f8
https://doi.org/10.1002/celc.201500245
https://doi.org/10.1002/celc.201500245
Publikováno v:
Hyomen Kagaku. 36:369-374
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::098865e33f93671d5d07950a4f175996
https://doi.org/10.1380/jsssj.36.369
https://doi.org/10.1380/jsssj.36.369
Autor:
Naoki Saito, Keisuke Nishitani, Hiroki Sakane, Yasuhisa Sano, Daichi Mori, Akito Imafuku, Mizuho Morita, Kenta Arima, Kentaro Kawai
Publikováno v:
Carbon. 80:440-445
The deposition of carbon is the key to yielding pit-free graphene terraces on SiC(0 0 0 1) surfaces. We present a novel technique to form a carbon overlayer at the monolayer scale on a SiC(0 0 0 1) Si-face substrate involving plasma oxidation at atmo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::404e6ebd107d1aefe780078ed3eca426
https://doi.org/10.1016/j.carbon.2014.08.083
https://doi.org/10.1016/j.carbon.2014.08.083
Autor:
Mizuho Morita, Kenta Arima, Kentaro Kawai, Naoki Saito, Akito Imafuku, Yasuhisa Sano, Daichi Mori
Publikováno v:
ECS Transactions. 64:23-28
Epitaxial graphene on silicon carbide (SiC) is promising for future electronic devices. A well-known scheme for the epitaxial growth of graphene is to heat a Si-face SiC(0001) surface to 1100-1300°C in ultrahigh vacuum (UHV), which results in the su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fa35dfbbbb48e9d3fee9420e5b788b38
https://doi.org/10.1149/06417.0023ecst
https://doi.org/10.1149/06417.0023ecst
Autor:
Toshinori Hirano, Junichi Uchikoshi, Masaki Otani, Kentaro Tsukamoto, Kenji Adachi, Kenta Arima, Kentaro Kawai, Takabumi Nagai, Mizuho Morita
Publikováno v:
ECS Transactions. 50:109-114
Lowering the surface reflectance of Si wafers by texturization is important for improving the efficiency of Si solar cells. For single crystalline Si solar cells, the anisotropic etching of an Si(100) plane with alkaline solutions is effective in for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8c5169029148141834bb04f7fc30a01c
https://doi.org/10.1149/05051.0109ecst
https://doi.org/10.1149/05051.0109ecst
Publikováno v:
Current Applied Physics. 12:S33-S37
We describe a novel method for generation of femtolitre-order monodisperse droplets using a multistage dividing microfluidic channel. A droplet is uniformly divided into 16 parts in a four-stage microfluidic channel without the need for external equi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::235bbb9293a00de3341bdc0752ba5ebb
https://doi.org/10.1016/j.cap.2012.06.022
https://doi.org/10.1016/j.cap.2012.06.022
Autor:
Kenji Adachi, Toshinori Hirano, Yutaka Ie, Junichi Uchikoshi, Kenta Arima, Masaki Otani, Kentaro Tsukamoto, Kentaro Kawai, Mizuho Morita, Takabumi Nagai
Publikováno v:
Current Applied Physics. 12:S29-S32
The etching mechanism of Si by N-fluoropyridinium salt has been discussed. The etching rate increases with light intensity or temperature. Si is etched by the irradiation of light with an energy higher than the band gap of Si. The etching rate is alm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1caf40efb97d0fb585e6205f02a77032
https://doi.org/10.1016/j.cap.2012.05.005
https://doi.org/10.1016/j.cap.2012.05.005