Zobrazeno 1 - 10
of 67
pro vyhledávání: '"Mizue Ishikawa"'
Publikováno v:
Journal of the Magnetics Society of Japan. 44:56-63
Autor:
Atsushi Kurobe, N. Shimomura, Tomoaki Inokuchi, Satoshi Shirotori, Yushi Kato, K. Koi, Mariko Shimizu, H. Sugiyama, Y. Ohsawa, Soichi Oikawa, Mizue Ishikawa, B. Altansargai, H. Yoda
Publikováno v:
Journal of Magnetics. 24:107-111
Autor:
H. Yoda, Y. Ohsawa, Soichi Oikawa, Atsushi Kurobe, Kazutaka Ikegami, Tomoaki Inokuchi, Satoshi Shirotori, K. Koi, Mizue Ishikawa, Mariko Shimizu, H. Sugiyama, N. Shimomura, B. Altansargai, Yushi Kato
Publikováno v:
Journal of Magnetics. 23:639-643
Publikováno v:
IEEE Transactions on Magnetics. 54:1-4
A spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) is one of the emerging devices for the low power consumption in silicon-based electronics from the viewpoint of logic-in-memory architectures [1]. To realize these kinds of spintr
Autor:
Atsushi Kurobe, K. Koi, A. Tiwari, Yuzo Kamiguchi, Yoshiaki Saito, Satoshi Shirotori, Mizue Ishikawa, Naoharu Shimomura, Hideyuki Sugiyama, Yushi Kato, Yuichi Ohsawa, Tomoaki Inokuchi, Kazutaka Ikegami, Mariko Shimizu, Soichi Oikawa, B. Altansargai, Hiroaki Yoda
Publikováno v:
IEEE Transactions on Magnetics. 53:1-4
Voltage-control spintronics memory (VoCSM) is a spintronics-based memory that uses the voltage-control-magnetic-anisotropy (VCMA) effect as a selection method and the spin-Hall effect as a write method, and is a candidate for future nonvolatile main
Autor:
A. Tiwari, Tomoaki Inokuchi, Mariko Shimizu, B. Altansargai, Yushi Kato, Mizue Ishikawa, Naoharu Shimomura, Hiroaki Yoda, Soichi Oikawa, Atsushi Kurobe, K. Koi, Satoshi Shirotori, Yoshiaki Saito, Hideyuki Sugiyama, Yuichi Ohsawa
Publikováno v:
Physical Review Applied. 10
Magnetic random-access memory (MRAM) using spin-transfer torque for write operations has been intensively developed as a technology for saving energy. The authors' recently presented voltage-controlled spintronic memory (VoCSM), which instead employs
Autor:
Atsushi Kurobe, Tiwari Ajay, Hiroaki Yoda, Yushi Kato, Mizue Ishikawa, Soichi Oikawa, Naoharu Shimomura, K. Koi, Hideyuki Sugiyama, Buyandalai Altansargai, Tomoaki Inokuchi, Mariko Shimizu, Yuichi Ohsawa, Satoshi Shirotori
Publikováno v:
VLSI Circuits
Voltage Control Spintronics Memory (VoCSM) is a magnetic memory combining the spin Hall effect and Voltage Controlled Magnetic Anisotropy (VCMA). It has the potential to make MRAM work faster. In this paper, we described memory design of a write wind
Autor:
Hideyuki Sugiyama, Mizue Ishikawa, Tomoaki Inokuchi, Mariko Shimizu, Naoharu Shimomura, Atsushi Kurobe, K. Koi, A. Tiwari, Yuichi Ohsawa, Yushi Kato, Yoshiaki Saito, Satoshi Shirotori, Buyandalai Altansargai, Hiroaki Yoda, Soichi Oikawa
Publikováno v:
2018 IEEE International Magnetics Conference (INTERMAG).
The requirement of low power consumption, high speed, high endurance for emerging next generation universal memory, a three terminal (separate read/write terminals) spin-orbit-torque (SOT) based non-volatile memory (SOT-MRAM) devices have been gainin
Autor:
Tomoaki Inokuchi, Naoharu Shimomura, Mariko Shimizu, Mizue Ishikawa, A. Tiwari, Yoshiaki Saito, Atsushi Kurobe, K. Koi, Y. Kato, Satoshi Shirotori, Hideyuki Sugiyama, Yuichi Ohsawa, Buyandalai Altansargai, Soichi Oikawa, Hiroaki Yoda
Publikováno v:
2018 IEEE International Magnetics Conference (INTERMAG).
In recent years, writing data in magnetic random access memory (MRAM) utilizing voltage controlled magnetic anisotropy (VCMA) has attracted much attention for its potential low power consumption [1]. We proposed voltage-control spintronics memory (Vo
Autor:
Hideyuki Sugiyama, Yuichi Ohsawa, A. Tiwari, B. Altansargai, Satoshi Shirotori, Atsushi Kurobe, K. Koi, Tomoaki Inokuchi, Soichi Oikawa, Hiroaki Yoda, Mizue Ishikawa, Mariko Shimizu, Y. Kato, Naoharu Shimomura
Publikováno v:
2018 IEEE International Magnetics Conference (INTERMAG).
MRAM has been developed since 1980s until now with several ups and downs. The ultimate purpose is to realize non-volatile working memories to save energy consumption of conventional volatile working memories such as SRAM and DRAM. However all of non-