Zobrazeno 1 - 10
of 9 007
pro vyhledávání: '"Miyoung An"'
Autor:
Viner, Mark, Gardner, Ellen, Shaughnessy, Michael F., Bonk, Curtis J., Lee, Mimi Miyoung, Reeves, Thomas C., Reynolds, Thomas H.
Publikováno v:
Educational Technology, 2016 Jul 01. 56(4), 59-64.
Externí odkaz:
https://www.jstor.org/stable/44430482
Autor:
Song, Seohyun, Jo, Eunkyul Leah, Chen, Yige, Hong, Jeen-Pyo, Kim, Kyuwon, Wee, Jin, Kang, Miyoung, Lim, KyungTae, Park, Jungyeul, Park, Chulwoo
The Sejong dictionary dataset offers a valuable resource, providing extensive coverage of morphology, syntax, and semantic representation. This dataset can be utilized to explore linguistic information in greater depth. The labeled linguistic structu
Externí odkaz:
http://arxiv.org/abs/2410.01100
Despite the advances in large language models (LLMs), how they use their knowledge for reasoning is not yet well understood. In this study, we propose a method that deconstructs complex real-world questions into a graph, representing each question as
Externí odkaz:
http://arxiv.org/abs/2406.19502
Autor:
Kim, Seungone, Suk, Juyoung, Cho, Ji Yong, Longpre, Shayne, Kim, Chaeeun, Yoon, Dongkeun, Son, Guijin, Cho, Yejin, Shafayat, Sheikh, Baek, Jinheon, Park, Sue Hyun, Hwang, Hyeonbin, Jo, Jinkyung, Cho, Hyowon, Shin, Haebin, Lee, Seongyun, Oh, Hanseok, Lee, Noah, Ho, Namgyu, Joo, Se June, Ko, Miyoung, Lee, Yoonjoo, Chae, Hyungjoo, Shin, Jamin, Jang, Joel, Ye, Seonghyeon, Lin, Bill Yuchen, Welleck, Sean, Neubig, Graham, Lee, Moontae, Lee, Kyungjae, Seo, Minjoon
As language models (LMs) become capable of handling a wide range of tasks, their evaluation is becoming as challenging as their development. Most generation benchmarks currently assess LMs using abstract evaluation criteria like helpfulness and harml
Externí odkaz:
http://arxiv.org/abs/2406.05761
Autor:
Park, Joon Young, Shin, Young Jae, Shin, Jeacheol, Kim, Jehyun, Jo, Janghyun, Yoo, Hyobin, Haei, Danial, Hyun, Chohee, Yun, Jiyoung, Huber, Robert M., Gupta, Arijit, Watanabe, Kenji, Taniguchi, Takashi, Park, Wan Kyu, Shin, Hyeon Suk, Kim, Miyoung, Kim, Dohun, Yi, Gyu-Chul, Kim, Philip
Atomically thin van der Waals (vdW) films provide a novel material platform for epitaxial growth of quantum heterostructures. However, unlike the remote epitaxial growth of three-dimensional bulk crystals, the growth of two-dimensional (2D) material
Externí odkaz:
http://arxiv.org/abs/2405.20597
Autor:
Park, Giung, Son, Suhan, Kim, Jongchan, Chang, Yunyeong, Zhang, Kaixuan, Kim, Miyoung, Lee, Jieun, Park, Je-Geun
Observations of emergent quantum phases in twisted bilayer graphene prompted a flurry of activities in van-der-Waals (vdW) materials beyond graphene. Most current twisted experiments use a so-called tear-and-stack method using a polymer called PPC. H
Externí odkaz:
http://arxiv.org/abs/2401.04313
Publikováno v:
International Journal of Contemporary Hospitality Management, 2024, Vol. 36, Issue 12, pp. 4215-4236.
Externí odkaz:
http://www.emeraldinsight.com/doi/10.1108/IJCHM-11-2023-1728
We introduce a new problem KTRL+F, a knowledge-augmented in-document search task that necessitates real-time identification of all semantic targets within a document with the awareness of external sources through a single natural query. KTRL+F addres
Externí odkaz:
http://arxiv.org/abs/2311.08329
Autor:
Lee, Seokje, Abbas, Muhammad S., Yoo, Dongha, Lee, Keundong, Fabunmi, Tobiloba G., Lee, Eunsu, Kim, Han Ik, Kim, Imhwan, Jang, Daniel, Lee, Sangmin, Lee, Jusang, Park, Ki-Tae, Lee, Changgu, Kim, Miyoung, Lee, Yun Seog, Chang, Celesta S., Yi, Gyu-Chul
We report the growth of high-quality GaN epitaxial thin films on graphene-coated c-sapphire substrates using pulsed-mode metalorganic vapor-phase epitaxy, together with the fabrication of freestanding GaN films by simple mechanical exfoliation for tr
Externí odkaz:
http://arxiv.org/abs/2310.05127
Autor:
Imhwan Kim, Jinseok Ryu, Eunsu Lee, Sangmin Lee, Seokje Lee, Wonwoo Suh, Jamin Lee, Miyoung Kim, Hong seok Oh, Gyu-Chul Yi
Publikováno v:
NPG Asia Materials, Vol 16, Iss 1, Pp 1-6 (2024)
Abstract We report on the electrical characteristics of field-effect transistors (FETs) and Schottky diodes based on In2Te3 grown on hexagonal boron nitride (h-BN) substrates utilizing molecular beam epitaxy (MBE). A two-step growth method was used t
Externí odkaz:
https://doaj.org/article/de5cfb0c427f4764975eeae2ac0fd9b1