Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Miyo Miyashita"'
Autor:
Kenji Harauchi, Miyo Miyashita, Takumi Sugitani, Takaaki Yoshioka, Kazuya Yamamoto, Seiki Goto, Maehara Hiroaki, Hiroaki Ichinohe, Takashi Yamasaki
Publikováno v:
IEEE Journal of Solid-State Circuits. 56:2635-2646
This study describes the Ku -band 70- and 30-W-class internally matched gallium nitride (GaN) power amplifiers (PAs) for multi-carrier satellite communications (SatComs). The GaN PAs maintain low third-order intermodulation distortion (IMD3) over a w
Publikováno v:
IEICE Transactions on Electronics. :65-77
Autor:
Miyo Miyashita, Takayuki Matsuzuka, Kazunobu Fujii, Hiroaki Seki, Tomoyuki Asada, Teruyuki Shimura, Satoshi Suzuki, Kazuya Yamamoto
Publikováno v:
IEICE Transactions on Electronics. :618-631
Autor:
Satoshi Suzuki, Masakazu Hirobe, Kazuya Yamamoto, Hiroaki Seki, Kazuhiro Iyomasa, Miyo Miyashita
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 64:3244-3254
This paper proposes a simple but relatively accurate, receive (Rx)-band-noise estimation method for wideband code division multiple access (WCDMA) handset heterojunction bipolar transistor MMIC power amplifier module (PAM) design. The method is based
Autor:
Kenichi Horiguchi, Satoshi Suzuki, Miyo Miyashita, Hiroaki Seki, Kazuya Yamamoto, Shigeo Yamabe, Takayuki Matsuzuka
Publikováno v:
IEICE Transactions on Electronics. :837-848
Autor:
Kazuya Yamamoto, Miyo Miyashita, Morishige Hieda, Shigeru Fujiwara, Yoshinori Takahashi, Satoshi Suzuki, Fumimasa Kitabayashi, Kazunobu Fujii, Teruyuki Shimura, Hiroaki Seki, Suguru Maki
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. :1-16
This paper describes a newly developed Si/GaAs hybrid multiband power amplifier module (MB-PAM) that supports major quad wideband code division multiple access (WCDMA) bands (Bands 5, 8, 2, and 1) for handset applications. With four dies (two GaAs-HB
Autor:
Hiroaki Seki, Miyo Miyashita, Satoshi Suzuki, Kenichi Maeda, Takayuki Matsuzuka, Kazuya Yamamoto
Publikováno v:
IEICE Transactions on Electronics. :934-945
Publikováno v:
IEICE Transactions on Electronics. :1150-1160
Autor:
Yoshinobu Sasaki, Hitoshi Kurusu, Miyo Miyashita, Satoshi Suzuki, Hiroaki Seki, Kazuya Yamamoto
Publikováno v:
IEICE Transactions on Electronics. :716-728
Autor:
Akira Ohta, Koji Yamanaka, Norihiro Yunoue, Tetsuo Kunii, Takuo Morimoto, Shohei Imai, Maehara Hiroaki, Hideaki Katayama, Miyo Miyashita, Hiroshi Fukumoto, Akira Inoue, Takuma Torii
Publikováno v:
2016 46th European Microwave Conference (EuMC).
Two kinds of high efficiency power amplifiers (PAs) at X and Ku bands utilizing 0.15 μm GaN HEMT technology are presented. The 0.15 μm GaN HEMT technology with cutoff frequency of over 40 GHz enables them to realize high RF performances at higher f