Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Miyako Matsui"'
Autor:
Masaya Imai, Miyako Matsui, Ryoko Sugano, Takashi Shiota, Ko-ichi Takasaki, Makoto Miura, Yohei Ishii, Kenichi Kuwahara
Publikováno v:
Japanese Journal of Applied Physics. 62:SI1014
The Ru etching mechanism was investigated using O2/Cl2 plasma with O, ClO, and Cl radicals. The etch rate drastically increased with a 10%–20% addition of Cl2 to O2 and was lower when using pure O2 or Cl2-rich gas in an ECR etcher. Experimental res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e472e1fa1a3162fd74f88ef2ff759498
https://doi.org/10.35848/1347-4065/acceac
https://doi.org/10.35848/1347-4065/acceac
Publikováno v:
Journal of Vacuum Science & Technology A. 39:043008
As part of the self-aligned processes to fabricate a 3D device, highly selective SiCN etching using NF3/Ar-based gas plasma generated by microwave electron-cyclotron resonance was investigated. The etching rate of SiCN etched by NF3/Ar plasma was hig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81a56b24f270eafef1a53bb2661b93b8
https://doi.org/10.1116/6.0000711
https://doi.org/10.1116/6.0000711
Autor:
Kenichi Kuwahara, Miyako Matsui
Publikováno v:
Japanese Journal of Applied Physics. 57:06JB01
A cyclic process for highly selective SiO2 etching with atomic-scale precision over Si3N4 was developed by using BCl3 and fluorocarbon gas chemistries. This process consists of two alternately performed steps: a deposition step using BCl3 mixed-gas p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::024dd3a45ec24cfd07548f1d32faa4df
https://doi.org/10.7567/jjap.57.06jb01
https://doi.org/10.7567/jjap.57.06jb01
Publikováno v:
Plasma Sources Science and Technology. 11:A202-A205
To investigate the mechanism of highly selective SiO2 contact hole etching, we analysed surfaces exposed to C4F8/Ar/O2 plasma in a dual-frequency parallel-plate etching system. The thickness and composition of the fluorocarbon layer on large areas an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb7f98d84d8008b7e2d229e5502dcc0c
https://doi.org/10.1088/0963-0252/11/3a/330
https://doi.org/10.1088/0963-0252/11/3a/330
Publikováno v:
Japanese Journal of Applied Physics. 56:06HB03
We investigated the effects of gas pressure on the dissociation of C4F8/Ar plasma and the formations of fluorocarbon layers on etched materials by SiO2 etching using pulsed-microwave electron-cyclotron-resonance plasma. Dissociated radicals and molec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f08e8c2e16e3fd452acfb2c52aca3191
https://doi.org/10.7567/jjap.56.06hb03
https://doi.org/10.7567/jjap.56.06hb03
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 19:2089-2096
The relationship between reactive species flux and their modified surfaces was studied in a SiO2 highly selective etching over Si and Si3N4. Sample specimens with large patterns and φ 0.35 μm contact holes were etched using C4F8/Ar/O2 plasma in a d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d1e3b9564c4fabb1bbbde1ecd877bfb
https://doi.org/10.1116/1.1376709
https://doi.org/10.1116/1.1376709
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 19:1282-1288
We characterized the surface reaction layers formed by a fluorocarbon plasma for SiO2 selective etching over Si and Si3N4, in order to understand the etch mechanism and develop a process and tool for future ultralarge-scale integrated circuit process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::628e646c226f804e5b6a786bef925b4e
https://doi.org/10.1116/1.1383064
https://doi.org/10.1116/1.1383064
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:1562-1569
The etch rates of SiO2, photoresist, Si, and SiN in a 27 MHz reactive ion etching system at constant ion flux of 6×1016 cm−2 s−1 and ion energy of 1450 V were studied. Typical incident flux densities of CF2 and CF+ were on the order of 1017 and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09feb35a2f19d2c10247b1a1bfa2317a
https://doi.org/10.1116/1.582102
https://doi.org/10.1116/1.582102