Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Miwa Kozu"'
Publikováno v:
Crystal Growth & Design. 15:4979-4985
The evolution of polytypism during GaAs nanowire growth was investigated by in situ X-ray diffraction. The growth of nanowires was found to start with the formation of zincblende structure, followed by the growth of wurtzite structure. The growth pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8875d9d8d20a2fa3ce65fe497f936644
https://doi.org/10.1021/acs.cgd.5b00915
https://doi.org/10.1021/acs.cgd.5b00915
High-speed three-dimensional reciprocal-space mapping during molecular beam epitaxy growth of InGaAs
Publikováno v:
Journal of Applied Crystallography. 45:1046-1053
This paper describes the development of a high-speed three-dimensional reciprocal-space mapping method designed for the real-time monitoring of the strain relaxation process during the growth of heterostructure semiconductors. Each three-dimensional
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a09c641e3404a7a8d9d0b29e53421d7
https://doi.org/10.1107/s0021889812036175
https://doi.org/10.1107/s0021889812036175
Autor:
Wolfgang Braun, André Proessdorf, Miwa Kozu, Masamitu Takahasi, S. Fujikawa, Wen Hu, M. Hanke, P. Rodenbach, H. Riechert, F. Grosse
Publikováno v:
Surface Science. 606:1458-1461
The InSb(111)A surface is prepared by molecular beam epitaxy and investigated by reflection high-energy electron diffraction (RHEED). The complete two dimensional diffraction pattern is mapped out by azimuthal RHEED (ARHEED). Two reconstructions are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5962b12f4672f1518601ed6b328515f1
https://doi.org/10.1016/j.susc.2012.05.017
https://doi.org/10.1016/j.susc.2012.05.017
Publikováno v:
Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88dd977af8f3979a44165777816a256b
https://doi.org/10.7567/ssdm.2015.d-7-6
https://doi.org/10.7567/ssdm.2015.d-7-6
Autor:
Masamitu Takahasi, Kazuma Ikeda, Hidetoshi Suzuki, Miwa Kozu, Wen Hu, Yoshio Ohshita, Yuka Nakata
Publikováno v:
Journal of Crystal Growth. 378:34-36
The molecular-beam epitaxial growth processes of GaAs on Si(001) were investigated using in situ synchrotron X-ray diffraction. Three-dimensional X-ray intensity distributions around the Si and GaAs 022 Bragg points in reciprocal space were measured
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75a3870d9e79c4a74afcecceaa1c2cdf
https://doi.org/10.1016/j.jcrysgro.2012.12.119
https://doi.org/10.1016/j.jcrysgro.2012.12.119
Publikováno v:
Japanese Journal of Applied Physics. 55:04EJ04
The polytypism of GaAs nanowires was investigated by in situ X-ray diffraction under different growth conditions. The growth of nanowires was found to start with the formation of the zincblende structure, followed by the growth of the wurtzite struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7931505a4f3f2643b3af50e5b6c9b32c
https://doi.org/10.7567/jjap.55.04ej04
https://doi.org/10.7567/jjap.55.04ej04
Publikováno v:
Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ace844658932b875495803aaa234f341
https://doi.org/10.7567/ssdm.2011.m-3-2
https://doi.org/10.7567/ssdm.2011.m-3-2
Publikováno v:
Journal of Physics: Conference Series. 425:202010
A ternary Fresnel zone plate (FZP) has been fabricated and installed at the beamline 11XU of SPring-8, in the aim of in situ studies on the growth of semiconductor nanostructures. The FZP is designed for an X-ray energy of 9.5 keV for the first-order
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b67babed036fa56fab5de4583c09b30a
https://doi.org/10.1088/1742-6596/425/20/202010
https://doi.org/10.1088/1742-6596/425/20/202010
Autor:
Robert Feidenhans'l, Miwa Kozu, Wen Hu, Jesper Nygård, Peter Krogstrup, Masamitu Takahasi, Yuka Nakata, Morten Hannibal Madsen
Publikováno v:
Applied Physics Letters. 100:093103
In-situ monitoring of the crystal structure formation during Ga-assisted GaAs nanowire growth on Si(111) substrates has been performed in a combined molecular beam epitaxy growth and x-ray characterization experiment. Under Ga rich conditions, we sho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cd87c8195b2d8eb9603ddbca5c0c3b8
https://doi.org/10.1063/1.3688489
https://doi.org/10.1063/1.3688489
Publikováno v:
Japanese Journal of Applied Physics; Apr2016, Vol. 55 Issue 4s, p1-1, 1p