Zobrazeno 1 - 10
of 128
pro vyhledávání: '"Miwa, J. A."'
Autor:
Majchrzak, P., Volckaert, K., Cabo, A. G., Biswas, D., Bianchi, M., Mahatha, S. K., Dendzik, M., Andreatta, F., Grønborg, S. S., Marković, I., Riley, J. M., Johannsen, J. C., Lizzit, D., Bignardi, L., Lizzit, S., Cacho, C., Alexander, O., Matselyukh, D., Wyatt, A. S., Chapman, R. T., Springate, E., Lauritsen, J. V., King, P. D. C., Sanders, C. E., Miwa, J. A., Hofmann, P., Ulstrup, S.
The quasiparticle spectra of atomically thin semiconducting transition metal dichalcogenides (TMDCs) and their response to an ultrafast optical excitation critically depend on interactions with the underlying substrate. Here, we present a comparative
Externí odkaz:
http://arxiv.org/abs/2103.16975
Autor:
Schenk, A. K., Pakpour-Tabrizi, A. C., Holt, A. J. U., Mahatha, S. K., Arnold, F., Bianchi, M., Jackman, R. B., Miwa, J. A., Hofmann, Ph., Cooil, S. P., Wells, J. W., Mazzola, F.
Using angle-resolved photoelectron spectroscopy, we compare the electronic band structure of an ultrathin (1.8 nm) {\delta}-layer of boron-doped diamond with a bulk-like boron doped diamond film (3 {\mu}m). Surprisingly, the measurements indicate tha
Externí odkaz:
http://arxiv.org/abs/1907.00673
Autor:
Mazzola, F., Wells, J. W., Pakpour-Tabrizi, A. C., Jackman, R. B., Thiagarajan, B., Hofmann, Ph., Miwa, J. A.
We demonstrate simultaneous quantisation of conduction band (CB) and valence band (VB) states in silicon using ultra-shallow, high density, phosphorus doping profiles (so-called Si:P $\delta$-layers). We show that, in addition to the well known quant
Externí odkaz:
http://arxiv.org/abs/1801.00373
Non-magnetic ground state of Ni adatoms on Te-terminated bismuth chalcogenide topological insulators
Autor:
Vondracek, M., Honolka, J., Cornils, L., Warmuth, J., Zhou, L., Kamlapure, A., Khajetoorians, A. A., Wiesendanger, R., Wiebe, J., Michiardi, M., Bianchi, M., Miwa, J., Barreto, L., Hofmann, P., Piamonteze, C., Minar, J., Mankovsky, S., Borek, St., Ebert, H., Schueler, M., Wehling, T., Mi, J. -L., Iversen, B. -B.
Publikováno v:
Phys. Rev. B 94, 161114 (2016)
We report on the quenching of single Ni adatom moments on Te-terminated Bi2Te2Se and Bi2Te3 topological insulator surfaces. The effect becomes manifested as a missing X-ray magnetic circular dichroism for resonant L3,2 transitions into partially fill
Externí odkaz:
http://arxiv.org/abs/1603.09689
Autor:
Bianchi, M., Song, F., Cooil, S., Monsen, A. F., Wahlstrom, E., Miwa, J. A., Rienks, E. D. L., Evans, D. A., Strozecka, A., Pascual, J. I., Leandersson, M., Balasubramanian, T., Hofmann, Ph., Wells, J. W.
Publikováno v:
Physical Review B 91 (16), 165307, 2015
The high index (441) surface of bismuth has been studied using Scanning Tunnelling Microscopy (STM), Angle Resolved Photoemission Spectroscopy (APRES) and spin-resolved ARPES. The surface is strongly corrugated, exposing a regular array of (110)-like
Externí odkaz:
http://arxiv.org/abs/1506.08017
Autor:
Mol, J. A., Salfi, J., Rahman, R., Hsueh, Y., Miwa, J. A., Klimeck, G., Simmons, M. Y., Rogge, S.
The energy spectrum of spin-orbit coupled states of individual sub-surface boron acceptor dopants in silicon have been investigated using scanning tunneling spectroscopy (STS) at cryogenic temperatures. The spatially resolved tunnel spectra show two
Externí odkaz:
http://arxiv.org/abs/1501.05669
Understanding the electronic properties of dopants near an interface is a critical challenge for nano-scale devices. We have determined the effect of dielectric mismatch and quantum confinement on the ionization energy of individual acceptors beneath
Externí odkaz:
http://arxiv.org/abs/1303.2712
Autor:
Lipton-Duffin, J. A., Miwa, J. A., Kondratenko, M., Cicoira, F., Sumpter, B. G., Meunier, V., Perepichka, D. F., Rose, F., Turro, Nicholas J.
Publikováno v:
Proceedings of the National Academy of Sciences of the United States of America, 2010 Jun . 107(25), 11200-11204.
Externí odkaz:
https://www.jstor.org/stable/20724045
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