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pro vyhledávání: '"Mittmann, Terence"'
Autor:
Mittmann, Terence
Die Digitalisierung ist in vollem Gange. Viele Geräte werden intelligent, das heißt sie bekommen ein eigenes Rechenwerk und werden mit permanentem Internetzugang ausgestattet. Da viele dieser neuen intelligenten Geräte möglichst mobil sein sollen
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Akademický článek
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Autor:
Mittmann, Terence, Fengler, Franz P.G., Richter, Claudia, Park, Min Hyuk, Mikolajick, Thomas, Schroeder, Uwe
Publikováno v:
In Microelectronic Engineering 25 June 2017 178:48-51
Autor:
Baumgarten, Lutz, Szyjka, Thomas, Mittmann, Terence, Gloskovskii, Andrei, Schlueter, Christoph, Mikolajick, Thomas, Schroeder, Uwe, Müller, Martina
Publikováno v:
Advanced Functional Materials; 1/15/2024, Vol. 34 Issue 3, p1-16, 16p
Autor:
Schroeder, Uwe, Materano, Monica, Mittmann, Terence, Lomenzo, Patrick D., Mikolajick, Thomas, Toriumi, Akira
Different causes for ferroelectric properties in hafnium oxide were discussed during the last decade including various dopants, stress, electrode materials, and surface energy from different grain sizes. Recently, the focus shifted to the impact of o
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Autor:
Hoffmann, Michael, Fengler, Franz P. G., Herzig, Melanie, Mittmann, Terence, Max, Benjamin, Schroeder, Uwe, Negrea, Raluca, Lucian, Pinitilie, Slesazeck, Stefan, Mikolajick, Thomas
The properties of ferroelectric materials, which were discovered almost a century ago¹, have led to a huge range of applications, such as digital information storage², pyroelectric energy conversion³ and neuromorphic computing⁴⁻⁵. Recently
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Autor:
Buragohain, Pratyush, Erickson, Adam, Kariuki, Pamenas, Mittmann, Terence, Richter, Claudia, Lomenzo, Patrick D., Lu, Haidong, Schenk, Tony, Mikolajick, Thomas, Schroeder, Uwe, Gruverman, Alexei
Ferroelectric (FE) HfO₂-based thin films, which are considered as one of the most promising material systems for memory device applications, exhibit an adverse tendency for strong imprint. Manifestation of imprint is a shift of the polarization–v
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Autor:
Mittmann, Terence, Materano, Monica, Lomenzo, Patrick D., Park, Min Hyuk, Stolichnov, Igor, Cavalieri, Matteo, Zhou, Chuanzhen, Chung, Ching-Chang, Jones, Jacob L., Szyjka, Thomas, Müller, Martina, Kersch, Alfred, Mikolajick, Thomas, Schroeder, Uwe
Thin film metal–insulator–metal capacitors with undoped HfO₂ as the insulator are fabricated by sputtering from ceramic targets and subsequently annealed. The influence of film thickness and annealing temperature is characterized by electrical
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Autor:
Stolichnov, Igor, Cavalieri, Matteo, Colla, Enrico, Schenk, Tony, Mittmann, Terence, Mikolajick, Thomas, Schroeder, Uwe, Ionescu, Adrian M.
The new class of fully silicon-compatible hafnia-based ferroelectrics with high switchable polarization and good endurance and thickness scalability shows a strong promise for new generations of logic and memory devices. Among other factors, their co
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Akademický článek
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