Microwave performance and structural characterization of MBE-grown AlGaN/GaN HEMTs on low dislocation density GaN substrates

Autor: Storm, D.F., Katzer, D.S., Roussos, J.A., Mittereder, J.A., Bass, R., Binari, S.C., Zhou, Lin, Smith, David J., Hanser, D., Preble, E.A., Evans, K.R.

Publikováno v: In Journal of Crystal Growth 2007 305(2):340-345

Homoepitaxial growth of GaN and AlGaN/GaN heterostructures by molecular beam epitaxy on freestanding HVPE gallium nitride for electronic device applications

Autor: Storm, D.F., Katzer, D.S., Mittereder, J.A., Binari, S.C., Shanabrook, B.V., Xu, X., McVey, D.S., Vaudo, R.P., Brandes, G.R.

Publikováno v: In Journal of Crystal Growth 2005 281(1):32-37

Pseudomorphic high electron mobility transistor monolithic microwave integrated circuits reliability study

Autor: Anderson, W.T, Roussos, J.A, Mittereder, J.A, Ioannou, D.E, Moglestue, C

Publikováno v: In Microelectronics Reliability 2001 41(8):1109-1113

Current collapse induced in AlGaN/GaN HEMTs by short-term DC bias stress.

Autor: Mittereder, J.A., Binari, S.C., Klein, P.B., Roussos, J.A., Katzer, D.S., Storm, D.F., Koleske, D.D., Wickenden, A.E., Henry, R.L.

Publikováno v: 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual; 2003, p320-323, 4p

Atomic force microscope measurement of channel temperature in GaAs devices.

Autor: Anderson, W.T., Mittereder, J.A., Roussos, J.A.

Publikováno v: 2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498); 2000, p31-36, 6p