Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Mitsuru Ushijima"'
Autor:
Suzuki Ayuta, Shunsuke Kimura, Mitsuru Ushijima, Toshiyuki Sameshima, Kosuke Ota, Masahiko Hasumi
Publikováno v:
2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
We report diffusing boron and phosphorus dopant atoms in silicon with impurity sources of BOx and POx layers formed on the top surfaces of n- and p-type crystalline silicon substrates. The silicon samples with impurity sources were subsequently cover
Autor:
Suzuki Ayuta, Toshiyuki Sameshima, Kosuke Ota, Mitsuru Ushijima, Masahiko Hasumi, Shunsuke Kimura
Publikováno v:
Applied Physics A. 122
A combination of the carbon-powder absorber with microwave irradiation is proposed as a rapid heat method. 2-μm-diameter carbon powders with a packing density of 0.08 effectively absorbed 2.45 GHz 1000-W-microwave and heated themselves to 1163 °C f
Publikováno v:
Thin Solid Films. 517(12):3446-3448
Efficient production of H atoms, O atoms and OH radicals was confirmed by laser spectroscopic measurements in the catalytic decomposition of H2, O2 and their mixtures on a heated Ir filament. No change in electric resistivity was observed when the fi
Autor:
Shunsuke Kimura, Kosuke Ota, Masahiko Hasumi, Ayuta Suzuki, Mitsuru Ushijima, Toshiyuki Sameshima
Publikováno v:
ECS Meeting Abstracts. :2118-2118
1.Introduction Crystallization of amorphous silicon (a-Si) thin films is important for fabricating thin film transistor (TFTs) and thin film solar cells [1]. Rapid heating is an attractive method with low thermal budget for fabricating these devices
Autor:
Hironobu Umemoto, Hiroshi Nishiyama, Yusaku Kashiwagi, Yasunobu Inoue, Kanji Yasui, Takuma Ishikawa, Mitsuru Ushijima, Yushin Nishihara
Publikováno v:
Japanese Journal of Applied Physics. 52:096701
The reaction of Zn(CH3)2 and activated H2O produced in a reaction of H2 and O2 on a Pt catalyst and effused from a nozzle was examined both experimentally and theoretically. This reaction has been shown to be effective in the preparation of high-qual
Autor:
Akihiko Kohno, Kazuhiko Tokunaga, Kohichi Tanaka, Toshio Mizuki, Toshiaki Arai, Yoshitaka Yamamoto, Mitsuru Ushijima, Shinsuke Oka, Narihiro Morosawa, Junichi Tanaka, Masayuki Kitamura
Publikováno v:
SID Symposium Digest of Technical Papers. 41:1393
We developed high performance as-deposited microcrystalline TFT. The microcrystalline silicon was deposited by novel MSEP (Metal Surface microwave Excitation Plasma)-CVD with high deposition rate of over 20 nm/min and its crystalline ratio was over 7
Publikováno v:
Robotics and Computer-Integrated Manufacturing. 10:ii
A resist process system of the present invention includes at least two robots for conveying a wafer, a passage through which the robots can move, plural process units arranged along the passage, and a waiting unit for temporarily holding the wafer wh