Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Mitsuru Okigawa"'
Publikováno v:
AIP Advances, Vol 10, Iss 12, Pp 125119-125119-4 (2020)
An n-type α-Ga2O3 layer was grown by mist chemical vapor deposition on a sapphire substrate, and a Ti/α-Ga2O3 Schottky barrier diode was fabricated. Although the α-Ga2O3 layer has a high threading dislocation density (larger than 109 cm−2), the
Externí odkaz:
https://doaj.org/article/e64b531672af4c0588aac636bbb3ac69
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Publikováno v:
AIP Advances, Vol 10, Iss 12, Pp 125119-125119-4 (2020)
An n-type α-Ga2O3 layer was grown by mist chemical vapor deposition on a sapphire substrate, and a Ti/α-Ga2O3 Schottky barrier diode was fabricated. Although the α-Ga2O3 layer has a high threading dislocation density (larger than 109 cm−2), the
Publikováno v:
Applied Physics Express. 13:115502
Publikováno v:
Applied Physics Express. 13:075507
Publikováno v:
Semiconductor Science and Technology. 35:055022
Publikováno v:
Japanese Journal of Applied Physics. 59:025512
We investigated the effect of mask materials on the epitaxial lateral overgrowth (ELO) characteristics of α-Ga2O3 and developed an ELO technique that can markedly suppress abnormal growth and cracking to enable long-term growth on a wide mask, which
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 23:1509-1512
We measured electron-hole pairs generated in dielectric film using our developed on-wafer monitoring technique to detect electrical currents in the film during the plasma etching processes. The electron-hole pairs were generated by plasma induced ult
Publikováno v:
Japanese Journal of Applied Physics. 42:2444-2448
We found that ultraviolet (UV) light from helium discharge plasma and a halogen lamp clearly induce SiO2-Si interface states in a metal-silicon-nitride-oxide-silicon (MNOS) structure. A dark current originating in the interface states of charge-coupl