Zobrazeno 1 - 10
of 252
pro vyhledávání: '"Mitsuru Funato"'
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-9 (2023)
Abstract Multi-wavelength visible light emitters play a crucial role in current solid-state lighting. Although they can be realized by combining semiconductor light-emitting diodes (LEDs) and phosphors or by assembling multiple LED chips with differe
Externí odkaz:
https://doaj.org/article/1fc9c49fc8da4befaa37293ea02225c5
Publikováno v:
AIP Advances, Vol 10, Iss 12, Pp 125014-125014-5 (2020)
Temperature-dependent electroluminescence measurements are performed for 265-nm AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) grown on AlN substrates. The external quantum efficiency (EQE) increases as the temperature decreases from
Externí odkaz:
https://doaj.org/article/509d1ffc358340e6b0cdc39f513a95cd
Publikováno v:
AIP Advances, Vol 9, Iss 12, Pp 125342-125342-9 (2019)
The impact of a face-to-face annealed sputtered AlN/sapphire (FFA Sp-AlN) template with threading-dislocation densities (TDDs) of 2 × 108 cm−2 and an n-type AlGaN (n-AlGaN) underlayer on optical properties of AlGaN multiple quantum wells (MQWs) wi
Externí odkaz:
https://doaj.org/article/ea229a84afd549aa8716a2d1fb22b39c
Publikováno v:
APL Photonics, Vol 4, Iss 7, Pp 070801-070801-7 (2019)
Deep-ultraviolet (DUV) microscopy and microspectroscopy have received much attention in label-free live-cell imaging, selective molecular analysis, and optical characterizations of ultrawide bandgap materials. Far-field optics approaches usually suff
Externí odkaz:
https://doaj.org/article/bea7366b341641ddbf050f0a11c2aaa9
Publikováno v:
AIP Advances, Vol 5, Iss 11, Pp 117115-117115-6 (2015)
Screw dislocations in Al-rich AlGaN/AlN quantum wells cause growth spirals with an enhanced Ga incorporation, which create potential minima. Although screw dislocations and their surrounding potential minima suggest non-radiative recombination proces
Externí odkaz:
https://doaj.org/article/d5d98263d1cd4d908fe141a7d6b8a761
Publikováno v:
Crystals, Vol 7, Iss 5, p 123 (2017)
The interface formation mechanisms of AlN films on sapphire substrates grown by the elementary source vapor phase epitaxy (EVPE) method, which is a new AlN bulk fabrication method using Al and N2 as precursors, are investigated. Supplying N2 after th
Externí odkaz:
https://doaj.org/article/71ee5cda5f4a4e85a8792ba067782973
Autor:
Takato Fukui, Yoshinobu Matsuda, Makoto Matsukura, Takahiro Kojima, Mitsuru Funato, Yoichi Kawakami
Publikováno v:
Crystal Growth & Design. 23:2739-2744
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a0f6e8848adb757cfe772399e3d2aca
https://doi.org/10.1021/acs.cgd.2c01525
https://doi.org/10.1021/acs.cgd.2c01525
Publikováno v:
Gallium Nitride Materials and Devices XVIII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2330e76d52ed6370b4ee24dd683b63d4
https://doi.org/10.1117/12.2649997
https://doi.org/10.1117/12.2649997
Light-emitting diodes (LEDs) using InGaN/GaN quantum wells (QWs) have low emission efficiencies in the green wavelength region, a problem known as the “green gap”. Surface plasmon (SP)-enhanced LEDs have attracted considerable attention because o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdfb662cdac76cae6538ccc0756f446b
https://doi.org/10.21203/rs.3.rs-2515057/v1
https://doi.org/10.21203/rs.3.rs-2515057/v1
Publikováno v:
Plasmonics: Design, Materials, Fabrication, Characterization, and Applications XX.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98a75cf8bf98e48c9f90ac756226a945
https://doi.org/10.1117/12.2633221
https://doi.org/10.1117/12.2633221