Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Mitsuhiro Noguchi"'
Autor:
Hong Ding, T. Pham, Takahiro Shimizu, Junji Musha, H. Nasu, T. Ogawa, Naoki Kobayashi, Toshiki Hisada, N. Ookuma, Noboru Shibata, G. Hemink, M. Sato, Toshifumi Hashimoto, S. Sakai, K. Kanazawa, Masahiro Yoshihara, Yosuke Kato, Yasuyuki Kajitani, Tomofumi Fujimura, Kazushige Kanda, Tomohiro Sugimoto, G. Liang, Y. Matsumoto, Katsuaki Isobe, K. Iwasa, T. Kobayashi, J. Nakai, M. Inagaki, S. Inoue, T. Ariki, Masaru Koyanagi, M. Watanabe, K. Inuzuka, Yoshinao Suzuki, Naofumi Abiko, M. Kojima, Naoaki Kanagawa, Y. Honda, Y. Utsunomiya, S. Zaitsu, Makoto Miakashi, Mitsuhiro Noguchi, M. Higashitani, D. He, F. Moogat, Hardwell Chibvongodze, Mitsuaki Honma, Teruhiko Kamei, Yuui Shimizu, Cuong Trinh, K. Ino, Michio Nakagawa, Toshihiro Suzuki, Ryuji Yamashita
Publikováno v:
ISSCC
NAND flash memory is widely used in digital cameras, USB devices, cell phones, camcorders and solid-state drives. Continuous lowering of bit cost, increasing flash-memory-die densities and improving performance have helped to expand flash markets. Re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b3bcf4af4f8a6be127d825af6311ce6
https://doi.org/10.1109/jssc.2012.2215094
https://doi.org/10.1109/jssc.2012.2215094
Autor:
Daisaburo Takashima, Noboru Shibata, Kazushige Kanda, Hiroshi Sukegawa, Shuso Fujii, Mitsuhiro Noguchi
Publikováno v:
ISSCC
An embedded DRAM using a standard NAND flash memory process has been demonstrated for the first time. This embedded DRAM without extra costly manufacturing process realizes 2.4 mm2 /Mb macro density and provides large-capacity on-chip page buffers an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc97836aca2aa1ae6eb5a5faf7402f1f
https://doi.org/10.1109/jssc.2011.2170779
https://doi.org/10.1109/jssc.2011.2170779
Publikováno v:
Solid-State Electronics. 48:979-984
This paper presents the effects of the back gate control on the threshold voltage fluctuation in fully-depleted SOI MOSFETs. Particularly, we mainly examine the threshold voltage fluctuation due to the variations of the SOI thickness. It is found tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5156c90377fa4d95edfb112bbce16547
https://doi.org/10.1016/j.sse.2003.12.018
https://doi.org/10.1016/j.sse.2003.12.018
Autor:
Mitsuhiro Noguchi, Tatsuo Asamaki
Publikováno v:
Electrochemistry. 67:1046-1050
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fa098f7ecee9e2c3be0d4755cbf19ad
https://doi.org/10.5796/electrochemistry.67.1046
https://doi.org/10.5796/electrochemistry.67.1046
Publikováno v:
Journal of Applied Physics. 80:5138-5144
We have systematically studied an electron phase breaking time in AlGaAs/GaAs quantum wires by measuring the weak‐localization effect. The phase breaking time does not saturate down to 0.5 K for quantum wires whose undoped AlGaAs spacers are not th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2956c33558f7d33a85ef8aa90918e281
https://doi.org/10.1063/1.363495
https://doi.org/10.1063/1.363495
Autor:
S. Kawanaka, A. Toriumi, Y. Mitani, Mitsuhiro Noguchi, Yukihito Oowaki, Toshinori Numata, T. Shino
Publikováno v:
IEEE Electron Device Letters. 22:32-34
The dependence of threshold voltage on silicon-on-insulator (SOI) thickness is studied on fully-depleted SOI MOSFETs, and, for this purpose, back-gate oxide thickness and back gate voltage are varied. When the back gate oxide is thinner than the crit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2447884713933f9d307546e8f1732097
https://doi.org/10.1109/55.892435
https://doi.org/10.1109/55.892435
Publikováno v:
Hyomen Kagaku. 13:394-401
化合物半導体表面では,極性半導体の格子振動によって生ずるFuchs-Kliewer表面フォノンや伝導電子プラズマ振動表面モードが,真空中に電磁場を放射し表面から10～100nm程度侵入する強い双極
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87672375dce61bf7f575d18774d8719f
https://doi.org/10.1380/jsssj.13.7_394
https://doi.org/10.1380/jsssj.13.7_394
Publikováno v:
Surface Science. 271:260-276
The surface electronic properties such as depletion layer thickness, surface potential, plasmon lifetime and electron density are systematically studied by analyzing surface phonon and plasmon excitations in high-resolution electron-energy-loss spect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db45eac9b6b5b5da89eda7ef6f50958a
https://doi.org/10.1016/0039-6028(92)90882-7
https://doi.org/10.1016/0039-6028(92)90882-7
Publikováno v:
Physical Review Letters. 66:2243-2246
The electronic structures of clean InAs(100) surfaces have been investigated by in situ high-resolution electron-energy-loss spectroscopy. Intrinsic electron accumulation layers with carrier densities strongly depending on the surface reconstruction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1959218ce832bd6639025a6c2f531073
https://doi.org/10.1103/physrevlett.66.2243
https://doi.org/10.1103/physrevlett.66.2243
Autor:
Norifumi Kajimura, H. Otake, F. Ito, Kazushige Kanda, Y. Okukawa, Teruhiko Kamei, Mitsuhiro Noguchi, M. Higashitani, M. Kojima, Masahiro Yoshihara, Kazuhide Yoneya, Frank Tsai, Masanobu Shirakawa, M. Itoh, Siu Lung Chan, Toshiki Hisada, Yosuke Kato, Takashi Taira, Eiichi Makino, Binh Quang Le, Dai Nakamura, G. Hemink, Toshio Yamamura, Alex Mak, Shinji Miyamoto, Raul-Adrian Cernea, Yoshinao Suzuki, Shigeo Ohshima, Susumu Fujimura, Koji Hosono, Toru Miwa, Yoshiaki Takeuchi, T. Maruyama, T. Arizono, Toshitake Yaegashi, Masaru Koyanagi, K. Ino
Publikováno v:
ISSCC
NAND flash memory use in digital still cameras and cellular phones is driving demand for larger-capacity storage. Moreover, NAND flash has the potential to replace HDDs. To achieve larger capacity while maintaining low cost per bit, technical improve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9da534784a76ae16b8a2968acd297f0f
https://doi.org/10.1109/isscc.2008.4523241
https://doi.org/10.1109/isscc.2008.4523241