Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Mitsuhiro Kushibe"'
Publikováno v:
Materials Science Forum. 1004:376-386
Configurations of the basal plane dislocations in 4H-SiC epitaxial layers are classified into two types, having typical combinations of ‘straight Si-core and straight C-core’ and ‘straight Si-core and curved C-core’ partial dislocations. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5e3589befe39ecfb67496b5091cf497
https://doi.org/10.4028/www.scientific.net/msf.1004.376
https://doi.org/10.4028/www.scientific.net/msf.1004.376
Publikováno v:
Journal of Electronic Materials. 49:5232-5239
The structure of partial dislocations (PDs), which surround triangular single Shockley stacking faults (1SSFs) expanded during electroluminescence observation in a 4H-SiC PiN diode, is investigated by photoluminescence (PL) imaging, PL spectroscopy,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b4c1db41c23e49b524c61408647e6b6
https://doi.org/10.1007/s11664-020-08133-7
https://doi.org/10.1007/s11664-020-08133-7
Autor:
Yoshiaki Daigo, Akio Ishiguro, Shigeaki Ishii, Mitsuhiro Kushibe, Toru Watanabe, Yoshikazu Moriyama
Publikováno v:
2020 International Symposium on Semiconductor Manufacturing (ISSM).
Homo-epitaxial 4H-SiC films were grown using high speed wafer rotation vertical CVD method, and the correlation between repeatability of the film properties and wafer temperature which is directly monitored by pyrometers was investigated. When the si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35c8a4bfff7f0a80a24f657dd50c909e
https://doi.org/10.1109/issm51728.2020.9377514
https://doi.org/10.1109/issm51728.2020.9377514
Autor:
Yoshiaki Daigo, Toru Watanabe, Shigeaki Ishii, Akio Ishiguro, Mitsuhiro Kushibe, Yoshikazu Moriyama
Publikováno v:
2020 International Symposium on Semiconductor Manufacturing (ISSM).
Harmful effect of by-product on the growth of homo-epitaxial 4H-SiC films using a high speed wafer rotation vertical CVD method was suppressed. Influence of by-product, such as 3C-SiC deposit formed on a hot-wall and Si deposit formed on gas nozzles,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64a3d89f974ab0a5c3cf42499e39feea
https://doi.org/10.1109/issm51728.2020.9377530
https://doi.org/10.1109/issm51728.2020.9377530
Autor:
Hirokuni Asamizu, Hidenori Kitai, Ryosuke Iijima, Johji Nishio, Kazutoshi Kojima, Shinsuke Harada, Akira Miyasaka, Mitsuhiro Kushibe, Ryoji Kosugi
Publikováno v:
Materials Science Forum. 924:432-435
Carrier lifetime in low carrier concentration 4H-SiC epitaxial layers grown on the C-face was enhanced by using carbon implantation and post annealing. The measured carrier lifetime increased with the thickness of the epitaxial layer and was 11.4 µs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d12925dde010de1075e5910913ce651
https://doi.org/10.4028/www.scientific.net/msf.924.432
https://doi.org/10.4028/www.scientific.net/msf.924.432
Publikováno v:
MRS Advances. 1:3631-3636
Reduction in background carrier concentration has been investigated for 4H-SiC C-face epitaxial growth in order to be applied for ultra-high voltage power devices. Optimizing epitaxial growth parameters made it possible to achieve 7.6x1013 cm-3 as th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f7a3fb66f717e3c61c0436eae82e3e1
https://doi.org/10.1557/adv.2016.326
https://doi.org/10.1557/adv.2016.326
Autor:
Mitsuhiro Kushibe, Masao Nishioka, Gen-ichi Hatakoshi, Rei Hashimoto, Mizunori Ezaki, Yasuhiko Arakawa
Publikováno v:
Journal of Crystal Growth. 298:658-662
For the growth of GaAs and AlGaAs by metalorganic chemical vapor deposition (MOCVD), the residual carrier concentration was confirmed to follow the relation of [Carrier concentration] ∝ [V/III] −4/3 . As this relation fit various growth condition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a69634e31c5af02876b98427c92a216
https://doi.org/10.1016/j.jcrysgro.2006.10.181
https://doi.org/10.1016/j.jcrysgro.2006.10.181
Autor:
Hideharu Matsuura, Kazuo Arai, Sou Kagamihara, Takashi Shinohe, Tetsuo Hatakeyama, Takatoshi Watanabe, Mitsuhiro Kushibe
Publikováno v:
Journal of Applied Physics. 96:5601-5606
In order to obtain some of the parameters required to simulate the electric characteristics of silicon carbide (SiC) power electronic devices in a wide temperature range from startup temperatures (⩽30°C) to steady-operation temperatures (⩾200°C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef90c3600b53173ff1e027bd896061d9
https://doi.org/10.1063/1.1798399
https://doi.org/10.1063/1.1798399
Autor:
Kazutoshi Kojima, Takatoshi Watanabe, Takashi Shinohe, Mitsuhiro Kushibe, K. Shiraishi, Kazuo Arai, Takaya Suzuki, Tomoyuki Tanaka, Tetsuo Hatakeyama, Seiji Imai, Nobuyuki Sano
Publikováno v:
Materials Science Forum. :673-676
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56d55a79c45b2ff789204b65aed82803
https://doi.org/10.4028/www.scientific.net/msf.457-460.673
https://doi.org/10.4028/www.scientific.net/msf.457-460.673
Publikováno v:
Materials Science Forum. :831-834
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7a6fae6b52b6489bc86e0e19ecf67b3
https://doi.org/10.4028/www.scientific.net/msf.433-436.831
https://doi.org/10.4028/www.scientific.net/msf.433-436.831