Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Mitsuharu Tai"'
Autor:
Yuho Shimizu, Aimi Ishizuna, Shin Osaki, Takaaki Hashimoto, Mitsuharu Tai, Tetsushi Tanibe, Kaori Karasawa
Publikováno v:
International Journal of Environmental Research and Public Health, Vol 19, Iss 1298, p 1298 (2022)
International Journal of Environmental Research and Public Health; Volume 19; Issue 3; Pages: 1298
International Journal of Environmental Research and Public Health; Volume 19; Issue 3; Pages: 1298
In recent years, smart health (s-Health) services have gained momentum worldwide. The s-Health services obtain personal information and aim to provide efficient health and medical services based on these data. In Japan, active efforts to implement th
Publikováno v:
Nonlinear Theory and Its Applications, IEICE. 10:236-248
Publikováno v:
The Proceedings of the Annual Convention of the Japanese Psychological Association. 84:PQ-003
Publikováno v:
Japanese Journal of Applied Physics. 47:6217-6221
A polysrystalline silicon (poly-Si) layer prepared by selectively enlarging laser crystallization (SELAX) was post-annealed by excimer laser irradiation. The average grain width increased 26% because of partly merged grains, while the morphological t
Autor:
Mieko Matsumura, Mutsuko Hatano, Hirotaka Hamamura, Makoto Ohkura, Toshio Miyazawa, Yoshiaki Toyota, Mitsuharu Tai
Publikováno v:
ECS Transactions. 3:35-41
Narrow frame size IPS-mode LCD with high resolution system-in- display have been developed utilizing hybrid laser crystallization technology: SELAX are applied to low-power, high-speed circuits, and conventional ELC are used for the high- voltage cir
Autor:
Seong-Kee Park, Shinya Yamaguchi, Takeo Shiba, Takeshi Noda, Mitsuharu Tai, Makoto Ohkura, Mutsuko Hatano
Publikováno v:
IEEE Transactions on Electron Devices. 51:934-939
Selectively enlarging laser crystallization (SELAX) has been proposed as a new crystallization process for use in the fabrication of thin-film transistors (TFTs). This method is capable of producing a large-grained and flat film of poly-Si. The avera
Autor:
Mutsuko Hatano, Mikio Hongo, Makoto Ohkura, Shinya Yamaguchi, Takeo Shiba, Takeshi Noda, Park Seong Kee, Mitsuharu Tai
Publikováno v:
Solid State Phenomena. 93:185-190
Publikováno v:
Hyomen Kagaku. 24:375-382
The liquid-solid interface motion and the temperature history of thin Si films during short pulse (FWHM = 25 ns) excimer laser annealing are observed by in-situ diagnostics. Substantial supercooling (> 200 K) followed by spontaneous nucleation into f
Publikováno v:
SPIE Proceedings.
We have developed a new crystallization technique using the pulse-like modulated CW-laser (LD-pumped Nd:YVO 4 SHG λ=532nm). Enlarging of lateral crystallization is attained by rapid laser-scanning on Si surface where the large (4μm × 0.5μm in ave
Autor:
Kinoshita Masaharu, Takasumi Ohyanagi, Takahiro Morikawa, Masahito Kitamura, Mitsuharu Tai, Norikatsu Takaura, Kennichi Akita
Publikováno v:
ECS Meeting Abstracts. :2043-2043
The electrical characteristics of topological-switching random access memory (TRAM) fabricated from superlattice films of [GeTe/Sb2Te3] were studied in order to show non-melting switching. A rectangular pulse with a very short width enabled SET/RESET