Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Mitsufumi Saito"'
Autor:
Togo Takahashi, Chisato Ando, Mitsufumi Saito, Yasumitsu Miyata, Yusuke Nakanishi, Jiang Pu, Taishi Takenobu
Publikováno v:
npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-8 (2021)
Abstract Increasing the upper critical field H c2 in superconductors is one of the most significant requirements for superconducting applications. Two-dimensional (2D) noncentrosymmetric NbSe2 is a promising candidate because its pair breaking is pro
Externí odkaz:
https://doaj.org/article/215361a0f8a7450d9539ce7546513833
Autor:
Yusuke Nakanishi, Yasumitsu Miyata, Mitsufumi Saito, Taishi Takenobu, Togo Takahashi, Jiang Pu, Chisato Ando
Publikováno v:
npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-8 (2021)
Increasing the upper critical field Hc2 in superconductors is one of the most significant requirements for superconducting applications. Two-dimensional (2D) noncentrosymmetric NbSe2 is a promising candidate because its pair breaking is protected by
Publikováno v:
IEICE Transactions on Electronics. :871-878
Publikováno v:
IEICE Transactions on Electronics. :1376-1384
Publikováno v:
physica status solidi c. 9:377-380
Zero bias millimeter-wave detection has been investigated by using backward diodes with InGaAs-based or Sb-based interband tunneling and Schottky contact InGaAs- based double-barrier resonant tunneling diodes (DBRTDs). These were intended to be typic
Publikováno v:
physica status solidi c. 9:278-281
Compound semiconductor resonant tunneling diodes (RTDs) have been studied aiming at realizing high speed devices in the terahertz range. An ultimate property of such a high-speed operation is limited by nonlinear transport physics of electrons. Recen
Publikováno v:
IEICE Transactions on Electronics. :820-825
Tunnel diodes are some of 2-port devices with negative differential resistance (NDR). In this paper, we propose a low insertion loss isolator, which can be designed to operate up to sub-millimeter region, by using resonant tunneling diodes (RTDs) and
Autor:
Michihiko Suhara, Anselme Tchegho, Shin Yamashita, Masahito Nakamura, Toshimichi Okazaki, Werner Prost, Satoshi Takahagi, Mitsufumi Saito, A. Poloczek, Franz-Josef Tegude, Yosuke Itagaki, Gregor Keller, Kiyoto Asakawa
Recently, heavy emitter doping rather than decreasing the barrier thickness has boosted the peak current density of resonant tunneling diodes (RTDs) above 1,000 kA/cm2. Based on this achievement very mature InP-based RTD with current densities above
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc38c6067b0ad19dccca0fe564b323e8
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=84866945504
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=84866945504
Publikováno v:
Japanese Journal of Applied Physics. 50:01BG01
Towards an application for terahertz detector, a monolithic integrated device structure of a triple-barrier resonant tunneling diodes (TBRTDs) with a bow-tie antenna is proposed and its terahertz rectification properties are investigated on the basis