Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Mitsuaki Kaneko"'
Publikováno v:
APL Materials, Vol 11, Iss 9, Pp 091121-091121-7 (2023)
The impact of oxidation temperature on the formation of single photon-emitting defects located at the silicon dioxide (SiO2)/silicon carbide (SiC) interface was investigated. Thermal oxidation was performed in the temperature range between 900 and 13
Externí odkaz:
https://doaj.org/article/6c58c74ef35a4c0f840f74d2688dabfe
Publikováno v:
Applied Physics Express, Vol 17, Iss 4, p 041004 (2024)
Deep levels near the surface of 4H-SiC after dry oxidation were investigated. A large and broad peak appeared in the low-temperature range of deep level transient spectroscopy (DLTS) spectra after oxidation of SiC at 1300 °C, indicating multiple dee
Externí odkaz:
https://doaj.org/article/0565dce8a99247e18373ff2b1242dbc0
Publikováno v:
IEEE Transactions on Electron Devices. 69:1989-1994
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5a25275995478f886f5cffe318b7a25
https://doi.org/10.1109/ted.2022.3154673
https://doi.org/10.1109/ted.2022.3154673
Publikováno v:
Applied Physics Express. 16:031005
Ni/p-type SiC Schottky barrier diodes with various acceptor densities (N A = 5 × 1015 to 3 × 1019 cm−3) are fabricated and the measured current–voltage characteristics are analyzed by numerical calculation of tunneling current. The tunneling cu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8892f8fd96fc0b4ca1ffdf5d24b3d977
https://doi.org/10.35848/1882-0786/acc30d
https://doi.org/10.35848/1882-0786/acc30d
Publikováno v:
IEEE Transactions on Electron Devices. 67:3740-3744
The impact ionization coefficients along the $\langle 11 \bar{2}0\rangle $ direction in 4H-SiC were extracted by analyzing photocurrent of mesa epitaxial p-n diodes with punchthrough (PT) structures fabricated on 4H-SiC ( $11\bar{2}0$ ). Compared wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::531da9c0c8889786cefeee3777894c92
https://doi.org/10.1109/ted.2020.3012118
https://doi.org/10.1109/ted.2020.3012118
Publikováno v:
IEEE Transactions on Electron Devices. 67:3329-3334
Heavily doped 4H-silicon carbide (SiC) epitaxial p-n junction diodes are fabricated, and their tunneling current under reverse-biased condition is investigated. Soft increase of the leakage current before avalanche breakdown is observed in the diodes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d0d8e83f4734af47ffbe8ecfbc956c2
https://doi.org/10.1109/ted.2020.3001909
https://doi.org/10.1109/ted.2020.3001909
Publikováno v:
Applied Physics Express. 16:021003
Mg contacts are formed on P+-implanted SiC (1 × 1017–8 × 1019 cm−3) and their current–voltage characteristics and contact resistivity (ρ c) are analyzed. The current density through the contacts on the ion-implanted SiC is several orders of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0172a2fd71ddedc6013261255eec391
https://doi.org/10.35848/1882-0786/acb98b
https://doi.org/10.35848/1882-0786/acb98b
Publikováno v:
Japanese Journal of Applied Physics. 62:010908
The activation ratio and the ionization energy (ΔE) of sulfur (S) atoms implanted in n-type 4H-SiC were investigated. It was revealed that implanted sulfur atoms show almost no diffusion during activation annealing at 1750 °C and the electrical act
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9c9a81a15b63ff0554ea6e78783d510
https://doi.org/10.35848/1347-4065/acb309
https://doi.org/10.35848/1347-4065/acb309
Publikováno v:
IEEE Transactions on Electron Devices. 67:4538-4540
Short-channel effects (SCEs) in double-gate silicon carbide junction field-effect transistors (JFETs) fully fabricated by ion implantation are experimentally investigated. The threshold voltage shift, drain-induced barrier lowering, and subthreshold
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47561a0ef5e77e75948319a569fca58a
https://doi.org/10.1109/ted.2020.3017143
https://doi.org/10.1109/ted.2020.3017143
Publikováno v:
Materials Science Forum. 963:841-844
Silicon carbide (SiC) n-and p-channel junction field effect transistors (JFETs) with vertical channels were fabricated by direct ion implantation into a high-purity semi-insulating 4H-SiC substrate in order to further develop the path towards complem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d82b81e129d72556db3931383e9f73a9
https://doi.org/10.4028/www.scientific.net/msf.963.841
https://doi.org/10.4028/www.scientific.net/msf.963.841