Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Mitsuaki Kabasawa"'
Autor:
Hiroyuki Kariya, Sho Kawatsu, Haruka Sasaki, Yasuhiko Kimura, Noriyasu Ido, Yoji Kawasaki, Mitsuaki Kabasawa
Publikováno v:
MRS Advances. 7:1285-1288
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64e4c2615ce15f8ee6251138480cbe5c
https://doi.org/10.1557/s43580-022-00490-1
https://doi.org/10.1557/s43580-022-00490-1
Autor:
Aki Ninomiya, Sho Kawatsu, Mitsuaki Kabasawa, Kazuhiro Watanabe, Yoji Kawasaki, Michiro Sugitani
Publikováno v:
2018 22nd International Conference on Ion Implantation Technology (IIT).
Outgassing is an unavoidable issue especially in high-energy ion implantation with photoresist masks. Under the outgassing, two phenomena affect the ion beam. One is the charge exchange induced by the interaction between ions and outgassing molecules
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9006fdcdba8a8f8adfa5bf96af7cb926
https://doi.org/10.1109/iit.2018.8807922
https://doi.org/10.1109/iit.2018.8807922
Publikováno v:
2018 22nd International Conference on Ion Implantation Technology (IIT).
In the SAion, a scanned beam system, Sb implantation at high dose and medium energy was evaluated, and the SAion demonstrated standard process characteristics under the production-worthy beam current.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9282bc5ca5d2500becef3a3ea354a3e5
https://doi.org/10.1109/iit.2018.8807911
https://doi.org/10.1109/iit.2018.8807911
Autor:
Mitsukuni Tsukihara, Toshio Yumiyama, Yasuharu Okamoto, Akihiro Ochi, Kazuhisa Ishibashi, Shiro Ninomiya, Mitsuaki Kabasawa, Yoji Kawasaki, Hiroyuki Kariya, Yusuke Ueno
Publikováno v:
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM).
One of the most important issues in semiconductor manufacturing is to suppress variation of characteristics in semiconductor devices within a wafer, in order to enhance production yield. In this report, an intentional two-dimensional (2D) nonuniform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b32bfe2ace5e6c47bf2ac8e55ba4787
https://doi.org/10.1109/edtm.2018.8421497
https://doi.org/10.1109/edtm.2018.8421497
Publikováno v:
2016 21st International Conference on Ion Implantation Technology (IIT).
The SAion is a leading-edge ion implanter developed for the upcoming generation. The SAion has extremely wide process coverage and high productivity throughout both the medium current (MC) and high current (HC) process ranges. In this paper, beam qua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6763204465320ef2b2f0654d921f8535
https://doi.org/10.1109/iit.2016.7882842
https://doi.org/10.1109/iit.2016.7882842
Autor:
Yasuharu Okamoto, Shiro Ninomiya, Kazuhisa Ishibashi, Mitsukuni Tsukihara, Yusuke Ueno, Toshio Yumiyama, Akihiro Ochi, Mitsuaki Kabasawa
Publikováno v:
2016 21st International Conference on Ion Implantation Technology (IIT).
Two-dimensional (2D) dose control is becoming well accepted for semiconductor device fabrication. At the same time, two specialized versions are arising; (1) High accuracy intentional non-uniform dose implant with relatively moderate dynamic dose ran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f657efd6de19e3d258ddce5abd23788
https://doi.org/10.1109/iit.2016.7882877
https://doi.org/10.1109/iit.2016.7882877
Autor:
Mitsukuni Tsukihara, Kazuhisa Ishibashi, Shiro Ninomiya, Toshio Yumiyama, Kazuyoshi Ueno, Akihiro Ochi, Mitsuaki Kabasawa, Akira Funai
Publikováno v:
2016 21st International Conference on Ion Implantation Technology (IIT).
Two-dimensional (2D) dose control is becoming well accepted for semiconductor device fabrication. At the same time, two specialized versions are arising; (1) High accuracy intentional non-uniform dose implant with relatively moderate dynamic dose ran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1b5b1b24100c757633230a43862a942
https://doi.org/10.1109/iit.2016.7882883
https://doi.org/10.1109/iit.2016.7882883
Autor:
Yoji Kawasaki, Mitsuaki Kabasawa, Sho Kawatsu, Kazutaka Tsukahara, Hiroyuki Kariya, Masazumi Koike, Makoto Sano
Publikováno v:
2016 21st International Conference on Ion Implantation Technology (IIT).
This paper will examine the influence of ion angle deviation (IAD) on sheet resistance. The IAD is derived from the beam intensity profile measured in the MC3-II/GP medium current implanter. IAD is controlled independently in the horizontal and verti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9714f048e71476bd61469a0644f0936
https://doi.org/10.1109/iit.2016.7882905
https://doi.org/10.1109/iit.2016.7882905
Autor:
Makoto Sano, Yoji Kawasaki, Sho Kawatsu, Masazumi Koike, Hiroyuki Kariya, Mitsuaki Kabasawa, Toshiki Miyake, Kazutaka Tsukahara
Publikováno v:
2016 21st International Conference on Ion Implantation Technology (IIT).
In ion implantation, repeatability of sheet resistances (Rs) is indispensable for process stability monitoring. In the course of process development, we found Rs instability in some implant conditions such as B, 7keV, and 9E13cm2 with tilt of 7
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17ca1dd65e1ecd7c6a388c6c4fb58e00
https://doi.org/10.1109/iit.2016.7882891
https://doi.org/10.1109/iit.2016.7882891
Autor:
Mitsukuni Tsukihara, Yoshitaka Amano, Kazuhiro Watanabe, Hiroyuki Kariya, Haruka Sasaki, Shiro Ninomiya, Mitsuaki Kabasawa, Kato Koji, Koji Inada, Kazuyoshi Ueno
Publikováno v:
2014 20th International Conference on Ion Implantation Technology (IIT).
In order to fabricate highly sensitive image sensors, ultra-high energy ion beams, such as 5 MeV of boron, are required. SEN has developed the S-UHE, a single-wafer ultra-high energy ion implanter, to obtain such ultra-high energy beams. The S-UHE ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48d251f462f2c1a4122e10266dd31d18
https://doi.org/10.1109/iit.2014.6940029
https://doi.org/10.1109/iit.2014.6940029