Zobrazeno 1 - 10
of 362
pro vyhledávání: '"Mitra Dutta"'
Publikováno v:
Nanomaterials, Vol 13, Iss 24, p 3143 (2023)
The feasibility of using quantum dots fabricated from materials with built-in spontaneous polarizations for the electric potential stimulation of biological structures in aqueous environments is evaluated by modeling the electric potential produced i
Externí odkaz:
https://doaj.org/article/e5618074e9d74ed4b67b3e770385e1c9
Publikováno v:
Chemosensors, Vol 11, Iss 12, p 569 (2023)
There is a pressing need to identify recent directions in the field of aptamer-based sensing. DNA aptamers that are synthetically generated by in vitro selection mechanisms using the SELEX technique are single-stranded oligonucleotides which are sele
Externí odkaz:
https://doaj.org/article/e5a85ca3c09a410cbc78c2d57262d797
Publikováno v:
Frontiers in Chemistry, Vol 8 (2020)
A simple optical aptasensor has been synthesized for the detection of calcium ions. This sensing approach employs a semiconductor quantum dot (QD)–gold nanoparticle as the donor–quencher pair and operates on the principle of fluorescence resonant
Externí odkaz:
https://doaj.org/article/7967556a2f6c4c0280fa5816fe065919
Publikováno v:
Scientific Reports, Vol 8, Iss 1, Pp 1-10 (2018)
Abstract Here we present a detailed theoretical analysis of the interaction between electrons and optical phonons of interface and confined modes in a wurtzite AlN/GaN/AlN quantum well heterostructure based on the uniaxial dielectric continuum model.
Externí odkaz:
https://doaj.org/article/76fd53ebcea64b21badb45c5447b970f
Publikováno v:
Nanomaterials, Vol 11, Iss 8, p 1956 (2021)
Herein, the spontaneous polarization in crystals with hexagonal symmetry are calculated as a function of the number of monolayers composing a nanostructure by adding the dipole moments for consecutive units of the nanostructure. It is shown that in t
Externí odkaz:
https://doaj.org/article/8828c110e24642dc8dd5a235ed59dbd4
Publikováno v:
PLoS ONE, Vol 14, Iss 4, p e0214971 (2019)
In GaN-based high electron mobility transistors (HEMTs), the fast emission of longitudinal optical (LO) phonons can result in the formation of hot spots near the gate region where high electric fields produce hot electrons. In this work, we investiga
Externí odkaz:
https://doaj.org/article/bec6f8296b674ef3afda1e66a15012b8
Publikováno v:
Journal of Electronic Materials.
This work reports morphologically alike, high-quality monolayer MoS2 flakes with a similar strain at various growth temperatures (750–900°C) achieved by adjusting sulfur temperature. The growth dynamics of MoS2 are correlated with changes in the p
Autor:
Mitra Dutta
Publikováno v:
CSI Transactions on ICT. 10:121-143
Publikováno v:
IEEE Electron Device Letters. 43:112-115
Autor:
Michael A Stroscio, Mitra Dutta
This volume provides valuable summaries on many aspects of advanced semiconductor heterostructures and highlights the great variety of semiconductor heterostructures that has emerged since their original conception. As exemplified by the chapters in