Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Mitchell R. LeRoy"'
Autor:
Ryan Clarke, Philip Jacob, Okan Erdogan, Paul Belemijian, Srikumar Raman, Mitchell R. Leroy, Tuhin Guha Neogi, Russell P. Kraft, Diana-Andra Borca-Tasciuc, John F. McDonald
Publikováno v:
IEEE Access, Vol 3, Pp 43-54 (2015)
We have previously evaluated the feasibility of a serial code accelerator core with 3-D DRAM stacked on the core operating at high frequencies. While operating at such high frequencies (>24 GHz), there are concerns with removing heat from the 3-D sta
Externí odkaz:
https://doaj.org/article/0e37535f0afa4f08ab5422b299d0d98f
Autor:
Tuhin Guha Neogi, Shengling Deng, Joseph Novak, Jong-Ru Guo, Ryan Clarke, Mitchell R. LeRoy, John F. McDonald, Zhaoran Rena Huang
Publikováno v:
IEEE Photonics Journal, Vol 3, Iss 1, Pp 42-56 (2011)
We present a rigorous electrical and optical analysis of a strained and graded base SiGe Heterojunction Bipolar Transistor (HBT) electrooptic (EO) modulator. In this paper, we propose a 2-D model for a graded base SiGe HBT structure that is capable o
Externí odkaz:
https://doaj.org/article/ca30f84b454d4f20b78a102ac071a72d
Autor:
Mitchell R. LeRoy, Tuhin Guha Neogi, Russell P. Kraft, Ryan Clarke, John F. McDonald, Srikumar Raman
Publikováno v:
IEEE Journal of Solid-State Circuits. 50:2703-2713
Many design challenges exist in achieving high frequency clocking for high-speed applications. This paper describes a new clock distribution technique and clocking approach with the use of clock doublers in close proximity to sub-circuits to achieve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ce53eb1ecd6beb7c05c66b49516c6ce
https://doi.org/10.1109/jssc.2015.2472600
https://doi.org/10.1109/jssc.2015.2472600
Autor:
Ryan Clarke, Mitchell R. LeRoy, Srikumar Raman, Tuhin Guha Neogi, John F. McDonald, Prachi Sharma
Publikováno v:
IEEE Transactions on Electron Devices. 62:2377-2383
This paper discusses improvements to a lateral bipolar device capable of integration into the existing CMOS process flow. With the help of simulations, we demonstrate that the emitter transit time limits the cutoff frequency of a lateral bipolar devi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30e0df21b831c13c7c3bc5419b750496
https://doi.org/10.1109/ted.2015.2438819
https://doi.org/10.1109/ted.2015.2438819
Autor:
Michael Chu, Chao You, Jin-Woo Kim, Ryan Clarke, Bryan Goda, Kuan Zhou, Mitchell R. LeRoy, Jong-Ru Guo, Srikumar Raman, John F. McDonald
Publikováno v:
Proceedings of the IEEE. 103:1181-1196
In this paper, we discuss the advantages and opportunities presented by high-speed ( $>$ 50 GHz) reconfigurable integrated circuits and how they may drive reconfigurable systems applications, such as software-defined radio, radar, and imaging. We pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50965c3b0bcbe099650fb66fdecbdc97
https://doi.org/10.1109/jproc.2015.2434818
https://doi.org/10.1109/jproc.2015.2434818
Autor:
Philip Jacob, Paul Belemijian, John F. McDonald, Okan Erdogan, Diana-Andra Borca-Tasciuc, Mitchell R. LeRoy, Tuhin Guha Neogi, Srikumar Raman, Ryan Clarke, Russell P. Kraft
Publikováno v:
IEEE Access, Vol 3, Pp 43-54 (2015)
We have previously evaluated the feasibility of a serial code accelerator core with 3-D DRAM stacked on the core operating at high frequencies. While operating at such high frequencies (>24 GHz), there are concerns with removing heat from the 3-D sta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c26a6e2ef08c942d5bb52078754d5c6a
https://doi.org/10.1109/access.2015.2396474
https://doi.org/10.1109/access.2015.2396474
Autor:
Ryan Clarke, Mitchell R. LeRoy, John F. McDonald, Russell P. Kraft, Michael Chu, Hadrian Olayvar Aquino, Aamir Zia, Srikumar Raman, Xuelian Liu
Publikováno v:
IET Circuits, Devices & Systems. 8:487-498
This study documents the speeds of various SRAM buffer memories that are possible in a contemporary fast SiGe heterojunction bipolar transistor (HBT) BiCMOS process. An SRAM in a 0.13 µm HBT BiCMOS technology using current mode logic (CML)-style cir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7ba06b877c8365959ba832f019a11a6
https://doi.org/10.1049/iet-cds.2013.0375
https://doi.org/10.1049/iet-cds.2013.0375
Autor:
Mitchell R. LeRoy, John F. McDonald, Russell P. Kraft, Srikumar Raman, A. Gutin, Michael Chu, Okan Erdogan, Xuelian Liu, Ryan Clarke
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 61:178-182
The time needed for processing serial code in programs has become the performance bottleneck of multicore computer systems according to Amdahl's law. A high-speed clock rate processor is essential for processing this serial code. The register file is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::078dff6d2d0b61f6b155efba64c38a20
https://doi.org/10.1109/tcsii.2013.2296119
https://doi.org/10.1109/tcsii.2013.2296119
Autor:
John F. McDonald, P. M. Belemjian, Michael Chu, A. Gutin, Russell P. Kraft, Mitchell R. LeRoy, Philip Jacob
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 58:2201-2210
Adder structures utilizing SiGe Hetero-junction Bipolar Transistor (HBT) digital circuits are examined for use in high clock rate digital applications requiring high-speed integer arithmetic. A 4-gate deep test structure for 32-bit addition using a 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::790d4dc7595dd16288b1234df5bdb4dd
https://doi.org/10.1109/tcsi.2011.2112850
https://doi.org/10.1109/tcsi.2011.2112850
Autor:
Ryan Clarke, Mitchell R. LeRoy, Tuhin Guha Neogi, Z. R. Huang, Shengling Deng, Joseph Novak, John F. McDonald, Jong-Ru Guo
Publikováno v:
IEEE Photonics Journal, Vol 3, Iss 1, Pp 42-56 (2011)
We present a rigorous electrical and optical analysis of a strained and graded base SiGe Heterojunction Bipolar Transistor (HBT) electrooptic (EO) modulator. In this paper, we propose a 2-D model for a graded base SiGe HBT structure that is capable o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c710084dfc4c50259c8250f4a8781b43
https://ieeexplore.ieee.org/document/5669323/
https://ieeexplore.ieee.org/document/5669323/