Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Mitchell F. Bennett"'
Autor:
Mitchell F. Bennett, Ziggy Pulwin, Kenneth J. Schmieder, Eric A. Armour, Jason D. Myers, Matthew P. Lumb, Margaret Stevens, Robert J. Walters, Jesse A. Frantz
Publikováno v:
2021 IEEE 48th Photovoltaic Specialists Conference (PVSC).
Fast epitaxial growth is an attractive method for reducing III-V photovoltaic device cost. Here, we grow a high-performance, rear-junction GaAs solar cell at 1 µm/min via metal organic chemical vapor deposition. We integrate an epitaxial distributed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd652d186ce5d17b6c9f7982d2aadadf
https://doi.org/10.1109/pvsc43889.2021.9518409
https://doi.org/10.1109/pvsc43889.2021.9518409
Autor:
Stephanie Tomasulo, Eric M. Jackson, Mijin Kim, Chul Soo Kim, Edward H. Aifer, Jill A. Nolde, Chaffra A. Affouda, Mitchell F. Bennett, Chadwick L. Canedy, Jerry R. Meyer, Michael V. Warren, Chase T. Ellis, Igor Vurgaftman, Erin R. Cleveland
Publikováno v:
IEEE Journal of Quantum Electronics. 55:1-11
Using a 2D metallic grating, we demonstrate the resonant enhancement of the external quantum efficiency of an nBn structure with a 0.5 $\mu \text{m}$ -thick-absorber. A total of two structures were studied with different barrier materials: ternary Al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7826f9926b9b8a5e07d1a7b5bf67f7de
https://doi.org/10.1109/jqe.2019.2896885
https://doi.org/10.1109/jqe.2019.2896885
Autor:
Robert J. Walters, Mitchell F. Bennett, Shawn Mack, Kenneth J. Schmieder, Chelsea R. Haughn, Matthew P. Lumb, S. I. Maximenko, Michael K. Yakes
Publikováno v:
Journal of Crystal Growth. 507:402-405
Micro-transfer printing has demonstrated value for device- and array-level heterogeneous integration in a variety of applications. Here, it is used instead to assemble unique substrates with the potential to enable III–V growth templates that are b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ca3c1931943e911d0b852a75f12e112
https://doi.org/10.1016/j.jcrysgro.2018.11.033
https://doi.org/10.1016/j.jcrysgro.2018.11.033
Autor:
Myles A. Steiner, Matthew P. Lumb, Mitchell F. Bennett, Jill A. Nolde, Jason D. Myers, Jesse A. Frantz, Kenneth J. Schmieder
Publikováno v:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC).
This work expands upon previous research related to transfer printed virtual substrates: a technique for generating low-cost engineered substrates that is not based on wafer reuse. Here, silicon and sapphire are evaluated as candidate low-cost handle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd0455780882a88549f98e7df6405d14
https://doi.org/10.1109/pvsc45281.2020.9301002
https://doi.org/10.1109/pvsc45281.2020.9301002
Autor:
Shawn Mack, Mitchell F. Bennett, Matthew P. Lumb, James E. Moore, Stephanie Tomasulo, Robert J. Walters, Michael K. Yakes, Kenneth J. Schmieder
Publikováno v:
IEEE Journal of Photovoltaics. 8:1641-1646
We demonstrate a novel concept for III-V engineered substrate cost reduction that does not rely on chemical–mechanical polishing or low-throughput release layer etching. With the potential for significant reduction to III-V substrate cost, the deta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c4720ef9cf7adfb1ec1e2c08f749252
https://doi.org/10.1109/jphotov.2018.2871573
https://doi.org/10.1109/jphotov.2018.2871573
Autor:
Kenneth J. Schmieder, Shawn Mack, Jesse A. Frantz, Mitchell F. Bennett, Jason D. Myers, Matthew P. Lumb, Robert J. Walters, Michael K. Yakes, Stephanie Tomasulo, Jill A. Nolde
Publikováno v:
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC).
Transfer printed virtual substrates (TPVS) is a promising technique for drastic III-V substrate cost reduction. In this work, we grew a three-period stack of GaAs virtual substrates on a source wafer and transfer printed material from each individual
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf920b8c11b51f56bc5d2d8ed4a979e9
https://doi.org/10.1109/pvsc40753.2019.8981258
https://doi.org/10.1109/pvsc40753.2019.8981258
Autor:
Thomas C. Mood, Eric A. Armour, Scott Burroughs, James F. Carter, Brent Fisher, Matthew P. Lumb, Ziggy Pulwin, Matthew Meitl, Mitchell F. Bennett, Kenneth J. Schmieder, Laura B. Ruppalt, Nicole A. Kotulak, Martin Diaz
Publikováno v:
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC).
We have developed multijunction solar cells on both GaAs and InP platforms to split the solar spectrum efficiently among subcells that maintain lattice-match to their respective source substrates. The GaAs-based dual-junction solar cell has achieved
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::202b1cf1309976fedb94c6e7edde6453
https://doi.org/10.1109/pvsc40753.2019.8981397
https://doi.org/10.1109/pvsc40753.2019.8981397
Autor:
Kenneth J. Schmieder, James E. Moore, Matthew P. Lumb, Thomas C. Mood, Eric A. Armour, Mitchell F. Bennett, Brent Fisher, David Scheiman, James F. Carter, Anmol Taploo, Scott Burroughs, Miroslav Samarskiy, Matt Meitl
Publikováno v:
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC).
In this paper, we report findings from a micro CPV module, employing 170 μm GaAs-based 2J CPV cells, assembled on glass substrates using micro-transfer printing. The CPV array uses all-glass lens arrays to focus the light with a geometric concentrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7da15b6b5448e8e985537f8b6200de8
https://doi.org/10.1109/pvsc40753.2019.8980829
https://doi.org/10.1109/pvsc40753.2019.8980829
Autor:
S.R. Messenger, Robert J. Walters, Ewart W. Blackmore, Michael Trinczek, Kenneth A. Clark, Nicolas J.-H. Roche, Mitchell F. Bennett, Cory D. Cress, Jeffrey H. Warner
Publikováno v:
IEEE Transactions on Nuclear Science. 62:2995-3002
GaAs diode dark currents are correlated over a very large proton energy range as a function of displacement damage dose (DDD). The linearity of the dark current increase with DDD over a wide range of applied voltage bias deems this device an excellen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::827f844ebdfe616c12fca009aee11a4d
https://doi.org/10.1109/tns.2015.2496720
https://doi.org/10.1109/tns.2015.2496720
Autor:
Mitchell F. Bennett, Shawn Mack, Michael K. Yakes, Brent Fisher, Matthew P. Lumb, Robert J. Walters, Kenneth J. Schmieder
Publikováno v:
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).
Virtual substrates formed by integrating high quality, micro-scale III-V epitaxial template layers with cheap handle materials using transfer printing offer a pathway to very low cost III-V growth substrates for microscale device epitaxy. However, un
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06086728f4dc2f33ae3f4b401137659a
https://doi.org/10.1109/pvsc.2018.8548303
https://doi.org/10.1109/pvsc.2018.8548303