Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Mitchell D. Kelley"'
Publikováno v:
Microelectronics Reliability. 81:174-180
The high-voltage silicon carbide MOSFET is a state-of-the-art solution for increasing power density and efficiency in power electronics; nonetheless, a full-scope of failure modes during extreme operating condition has not been established. Past effo
Publikováno v:
IEEE Transactions on Power Electronics. 32:6405-6415
Commercialization of 1200-V silicon carbide (SiC) MOSFET has enabled power electronic design with improved efficiency as well as increased power density. High-voltage spikes induced in applications such as solenoid control, solid-state transformer, b
Autor:
Bejoy N. Pushpakaran, William B. Ray, Stephen B. Bayne, Emily A. Hirsch, James A. Schrock, Mitchell D. Kelley, Argenis Bilbao, S. Holt
Publikováno v:
IEEE Transactions on Power Electronics. 31:1816-1821
SiC MOSFETs are a leading option for increasing the power density of power electronics; however, for these devices to supersede the Si insulated-gate bipolar transistor, their characteristics have to be further understood. Two SiC vertically oriented
Publikováno v:
2018 IEEE International Power Modulator and High Voltage Conference (IPMHVC).
We are reporting on models for a group of inverters that can feed real and reactive power into a utility grid in Grid-Tied mode and is able to smoothly transition to islanded mode. In grid tied mode, the inverters are operating in P/Q mode and inject
Publikováno v:
2015 IEEE Pulsed Power Conference (PPC).
The power density of pulsed power systems can be increased with the utilization of silicon carbide power devices1. With the latest developments in manufacturing techniques, the fabrication of insulated gate bipolar transistor (IGBT) devices with bloc
Autor:
S. Holt, William B. Ray, James A. Schrock, Mitchell D. Kelley, Argenis Bilbao, Stephen B. Bayne, Emily A. Hirsch
Publikováno v:
2015 IEEE Pulsed Power Conference (PPC).
Silicon carbide (4H-SiC) is a leading option for increasing the power density of pulsed power and power electronic systems1, 2. SiC devices used in high voltage switching applications experience high dV/dt due to fast switching transients. Under high
Publikováno v:
2015 IEEE Pulsed Power Conference (PPC).
Silicon Carbide (4H-SiC) is a state-of-the-art solution for increasing the energy density of pulsed power and power electronics. High power SiC MOSFET modules have only recently become commercially available; for widespread acceptance further device
Autor:
Emily A. Hirsch, Shelby Lacouture, William B. Ray, Stephen B. Bayne, James A. Schrock, Argenis Bilbao, Mitchell D. Kelley
Publikováno v:
2015 IEEE Pulsed Power Conference (PPC).
The advancement of wide bandgap semiconductor materials has led to the development of Gallium Nitride (GaN) power semiconductor devices, specifically GaN Power MOSFETs. GaN devices have improved characteristics in carrier mobility and on-state resist
Autor:
James A. Schrock, Aderinto Ogunniyi, Heather O'Brien, Mitchell D. Kelley, Emily A. Hirsch, Stephen B. Bayne, Shelby Lacouture, Argenis Bilbao, Michael Giesselmann, William B. Ray
Publikováno v:
IEEE Transactions on Power Electronics. :1-1
SiC SGTO thyristors are an advanced solution for increasing the power density of medium voltage power electronics. However, for these devices to replace Si thyristor technology in industrial applications their characteristics and failure modes must b
Autor:
Stephen B. Bayne, S. Holt, Mitchell D. Kelley, James A. Schrock, Argenis Bilbao, William B. Ray, Michael Giesselmann
Publikováno v:
Review of Scientific Instruments. 86:085104
Obtaining accurate collector to emitter voltage measurements when characterizing high voltage silicon carbide (SiC) devices requires the ability to measure voltages in the range of zero to 10 V while the device is in the on-state and the ability to w