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Sub 30nm Node Contact Hole Patterning Using Immersion Single Exposure with Negative Tone Development
Autor:
Seikho Kang, Lori Josesten, Ken Spizuoco, Mitchael Reilly, Rosemary Bell, Young Cheol Bae, Thomas Penniman
Publikováno v:
Journal of Photopolymer Science and Technology. 23:211-215
Contact hole patterning for 22nm node and beyond has become much more challenging. Since extreme ultraviolet lithography (EUV) is not yet ready, double patterning (DP) technology seems to be the most likely solution to achieve minimum half pitch of 4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cd999cf2dc0ea7cbf7199487d0a65dc
https://doi.org/10.2494/photopolymer.23.211
https://doi.org/10.2494/photopolymer.23.211
