Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Misuzu SAGAWA"'
Autor:
Misuzu SAGAWA, Yasuhiro NAMURA, Yasuki UCHIDA, Wakako MIYAMA, Shirabe NISHIMURA, Toshihiro YONEYAMA, Toshiki TAKAMIZAWA, Mitsuru MOTOYOSHI
Publikováno v:
Dental Materials Journal; 2024, Vol. 43 Issue 2, p247-254, 8p
Autor:
Yasuhiko Sugiyama, Misuzu Sagawa, Hideaki Kurata, Morishita Masatoshi, Shuntaro Machida, Kinoshita Masaharu, Hiroshi Oba, Matsui Ryohei, Daisuke Ryuzaki, Toshiyuki Mine, Watanabe Keiji, Nobuyuki Sugii, Koji Fujisaki, Shinji Nishimura
Publikováno v:
2018 IEEE Micro Electro Mechanical Systems (MEMS).
This paper reports a novel method that reduces fabrication period of customized MEMS sensors. A 3D printing method with a high-current plasma focused ion beam (FIB) system was developed and applied to MEMS sensor fabrication for the first time. Capac
Publikováno v:
2015 20th Microoptics Conference (MOC).
Dependence on polarization of optical propagation characteristics in Ge waveguides was investigated to understand the strain state toward operation of a Ge laser. A TE mode light showed a larger waveguide loss with a dry etched Ge waveguide cavity. A
Autor:
Hideo Arimoto, Yasunobu Matsuoka, Tadashi Okumura, Misuzu Sagawa, Yoshinori Sunaga, Yuki Wakayama
Publikováno v:
2015 European Conference on Optical Communication (ECOC).
We demonstrated 1310-nm 25-Gbps error-free transmission over both 2-km single-mode fibre and 100-m OM3 multi-mode fiber using the same silicon photonics transmitter and a high-sensitivity CMOS receiver with a lens-integrated photodiode.
Autor:
Katsuya Oda, Shinichi Nakatsuka, Yuji Suwa, Jun-ichi Kasai, Misuzu Sagawa, Tadashi Okumura, Tatemi Ido
Publikováno v:
2015 IEEE 12th International Conference on Group IV Photonics (GFP).
Optical propagation characteristics of unintentionally doped and n-type doped Ge waveguides were investigated to achieve tasing operation (if the Ge laser. An n-type doped Ge waveguide showed significant reduction of its propagation loss under optica
Autor:
Shigehisa Tanaka, Misuzu Sagawa, Etsuko Nomoto, Katsuya Oda, Yuki Wakayama, Tadashi Okumura, Hideo Arimoto, Yasunobu Matsuoka, Takashi Takemoto
Publikováno v:
SPIE Proceedings.
For a multi mode fiber optical link, a high speed silicon photonics receiver based on a highly alignment tolerant vertically illuminated germanium photodiode was developed. The germanium photodiode has 20 GHz bandwidth and responsivity of 0.5 A/W wit
Autor:
Jun-ichi Kasai, Misuzu Sagawa, Tatemi Ido, Katsuya Oda, Shinichi Saito, Yuji Suwa, Tadashi Okumura, Kazuki Tani
Publikováno v:
SPIE Proceedings.
Germanium light-emitting devices on silicon for very-short-reach interconnect were investigated theoretically and experimentally. Our approach to enhance light emission is by applying process-induced strain to the germanium active layer. According to
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 5:817-821
We have fabricated Al-free InGaAs-InGaAsP-GaAs strained quantum-well 0.98-/spl mu/m lasers with a window structure. The window structure was obtained by Si ion-implantation-induced QW intermixing. The photoluminescence and photocurrent measurements s
Autor:
Yasuhiko Arakawa, Kazuhiko Hosomi, Shigeo Goto, Toshiki Sugawara, Toshio Katsuyama, Misuzu Sagawa
Publikováno v:
Japanese Journal of Applied Physics. 47:6672-6674
Utilizing large optical group-velocity dependence on wavelength without polarization-mode dependence, we have developed an ultracompact dispersion compensator based on multiple one-dimensional coupled-defect-type photonic crystals. The photonic cryst
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 3:666-671
A 0.98-/spl mu/m InGaAs-InGaAsP-GaAs strained quantum-well (QW) laser with an exponential-shaped flared stripe is proposed for high-power, highly reliable operation. The stripe width is wider at the front facet to reduce the optical density by wideni