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Publikováno v:
神奈川工科大学研究報告.B,理工学編. 43:17-20
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Magnesium oxide (MgO) thin films are great concern as electrode protection layer with very high secondary emission coefficient (γ) in the application such as plasma display panel (PDP). We have studied the effect of the substrat
Magnesium oxide (MgO) thin films are great concern as electrode protection layer with very high secondary emission coefficient (γ) in the application such as plasma display panel (PDP). We have studied the effect of the substrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::86f3d1a036ff1537be959bd0328f9939
https://kait.repo.nii.ac.jp/records/1173
https://kait.repo.nii.ac.jp/records/1173
Publikováno v:
神奈川工科大学研究報告.B,理工学編. 38:67-70
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We developed the high-performance electrodes of a lamp used for backlighting liquid crystal displays. The discharge characteristics of the electrodes were measured. The electrodes used for discharge lamp were cylinder type (cup t
We developed the high-performance electrodes of a lamp used for backlighting liquid crystal displays. The discharge characteristics of the electrodes were measured. The electrodes used for discharge lamp were cylinder type (cup t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::58a884def9cdb6bbe1805c56999abfd8
https://kait.repo.nii.ac.jp/records/1117
https://kait.repo.nii.ac.jp/records/1117
Publikováno v:
神奈川工科大学研究報告.B,理工学編. 36:41-44
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The roughness of diamond surfaces were formed using O2 gas in a reactive ion etching (RIE) system. The electrode materials were used stainless steel (SUS) and MgO sintered ceramic. The diamond samples to be etched are positioned
The roughness of diamond surfaces were formed using O2 gas in a reactive ion etching (RIE) system. The electrode materials were used stainless steel (SUS) and MgO sintered ceramic. The diamond samples to be etched are positioned
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::e90174f69d681fab9b7ebf2b19c43774
https://kait.repo.nii.ac.jp/records/1086
https://kait.repo.nii.ac.jp/records/1086
Publikováno v:
神奈川工科大学研究報告.B,理工学編. 33:43-46
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MgO thin films have been deposited on quartz glass substrates by RF magnetron sputtering using a MgO target in Ar/O2 mixture gas. The films were evaluated using scanning electron microscope (SEM) and energy dispersive X-ray spect
MgO thin films have been deposited on quartz glass substrates by RF magnetron sputtering using a MgO target in Ar/O2 mixture gas. The films were evaluated using scanning electron microscope (SEM) and energy dispersive X-ray spect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::03d45fe11cba5a038008cf1efdd40cf1
https://kait.repo.nii.ac.jp/records/1046
https://kait.repo.nii.ac.jp/records/1046
Publikováno v:
神奈川工科大学研究報告.B,理工学編. 28:55-58
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Diamond films were etched using a reactive ion etching system in O2/CF4 plasma with narrow electrode gap. The maximum etching rate was obtained with the addition of 20%CF4 in O2 under conditions that the RF power was 100W, the ga
Diamond films were etched using a reactive ion etching system in O2/CF4 plasma with narrow electrode gap. The maximum etching rate was obtained with the addition of 20%CF4 in O2 under conditions that the RF power was 100W, the ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::2b93492098414f2373cc31fbcd64c383
https://kait.repo.nii.ac.jp/records/963
https://kait.repo.nii.ac.jp/records/963
Publikováno v:
神奈川工科大学研究報告.B,理工学編. 35:37-39
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MgO thin films were prepared on quartz glass substrates by RF magnetron sputtering using a MgO target. The secondary electron emission coefficient for MgO thin films was examined in relation to substrate temperature and film thic
MgO thin films were prepared on quartz glass substrates by RF magnetron sputtering using a MgO target. The secondary electron emission coefficient for MgO thin films was examined in relation to substrate temperature and film thic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::3b24e94def0f5114a1ee7e85ad509e81
https://kait.repo.nii.ac.jp/records/1071
https://kait.repo.nii.ac.jp/records/1071
Publikováno v:
神奈川工科大学研究報告.B,理工学編. 25:49-52
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Reactive ion etching (RIE) of chemical vapor deposition (CVD) diamond thin films has been investigated in depth in O2 gas plasma mixed with CF4 and electrodes distance. The optical emission spectrum of the RF plasma was monitored
Reactive ion etching (RIE) of chemical vapor deposition (CVD) diamond thin films has been investigated in depth in O2 gas plasma mixed with CF4 and electrodes distance. The optical emission spectrum of the RF plasma was monitored
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::f999dce967cfe3070bfc505781cc84cb
https://kait.repo.nii.ac.jp/records/904
https://kait.repo.nii.ac.jp/records/904
Autor:
Yamaguchi, Satoshi, Murakami, Masahiko, Takabatake, Nobuya, Misu, Takayuki, Goto, Miki, Arai, Toshihiko
Publikováno v:
神奈川工科大学研究報告.B,理工学編. 34:41-43
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Hot-filament chemical vapor deposition (CVD) of diamond was used to obtain polycrystalline diamond thin film electrodes on silicon substrates. Deposition was carried out using by a mixture of CH4/H2 gases through a heated reactor
Hot-filament chemical vapor deposition (CVD) of diamond was used to obtain polycrystalline diamond thin film electrodes on silicon substrates. Deposition was carried out using by a mixture of CH4/H2 gases through a heated reactor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::47bcf271bf7cfd76bd0467cc07482c22
https://kait.repo.nii.ac.jp/records/1057
https://kait.repo.nii.ac.jp/records/1057
Publikováno v:
神奈川工科大学研究報告.B,理工学編. 31:43-45
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Chemical vapor deposition (CVD) diamond etching was investigated in reactive ion etching system using MgO sintered ceramic electrode. MgO electrode system was consisted of two parallel disks with 7cm in diameter. The RF power (13
Chemical vapor deposition (CVD) diamond etching was investigated in reactive ion etching system using MgO sintered ceramic electrode. MgO electrode system was consisted of two parallel disks with 7cm in diameter. The RF power (13
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::f78e9f801f65ebf8e36807886b54ee4f
https://kait.repo.nii.ac.jp/records/1008
https://kait.repo.nii.ac.jp/records/1008