Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Mishel Matloubian"'
Publikováno v:
IEEE Transactions on Electron Devices. 37:1985-1994
n-channel SOI MOSFETs with floating bodies show a threshold voltage shift and an improvement in subthreshold slope at high drain biases. The magnitude of this effect depends on the device parameters and the starting SOI substrate. A simple device mod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f780a9040c0cc6f43ac9d7dee5a29f88
https://doi.org/10.1109/16.57160
https://doi.org/10.1109/16.57160
Autor:
A. Peterson, T.G.W. Blake, Mishel Matloubian, C.-E. Chen, W.E. Bailey, B.-Y. Mao, Gordon P. Pollack, R. Sundaresan
Publikováno v:
Proceedings. SOS/SOI Technology Workshop.
Summary form only given. Separation by implantation of oxygen (SIMOX) into silicon to obtain silicon-on-insulator substrates has emerged as the leading technology for radiation-hard integrated circuits. A key issue in building CMOS devices on SIMOX s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d33a4a1dc2bb5f78d51fa2a54475dbf
https://doi.org/10.1109/soi.1988.95450
https://doi.org/10.1109/soi.1988.95450
Publikováno v:
Noise in Physical Systems and 1/F Fluctuations.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e376cebb54fc5688a1de9b6535c6d450
https://doi.org/10.1142/9789812811165_0041
https://doi.org/10.1142/9789812811165_0041
Autor:
Gordon P. Pollack, B.-Y. Mao, L. R. Hite, Mishel Matloubian, C.-E. Chen, K. Maley, Harold L. Hughes
Publikováno v:
IEEE Transactions on Nuclear Science. 33:1702-1705
The total dose characteristics of CMOS devices fabricated in oxygen implanted buried oxide silicon-on-insulator (SOI) substrates with different post-implant annealing processes are studied. The threshold voltage shift, subthreshold slope degradation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8abce8b9ec288d65493d108cffee8e66
https://doi.org/10.1109/tns.1986.4334668
https://doi.org/10.1109/tns.1986.4334668
Publikováno v:
IEEE Transactions on Nuclear Science. 33:1223-1227
Nitridation of thin SiO2 layers has been achieved by a rapid thermal process in the presence of ammonia. The pre-and post-radiation performances of transistors with nitridated gate insulators have been presented. Nitridation causes a lowering of thre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e10fbecd4d60f2534977afec40003264
https://doi.org/10.1109/tns.1986.4334582
https://doi.org/10.1109/tns.1986.4334582
Publikováno v:
IEEE Electron Device Letters. 9:636-638
A single-transistor latch phenomenon observed in silicon-on-insulator (SOI) MOSFETs is reported. This latch effect, which occurs at high drain biases, is an extreme case of floating-body effects which are present in SOI MOSFETs. The floating body res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a8db1f7d0acd73fc31a51fb69d09e90
https://doi.org/10.1109/55.20420
https://doi.org/10.1109/55.20420
Publikováno v:
IEEE Electron Device Letters. 8:306-308
The effects of post-oxygen-implant annealing temperature on the characteristics of MOSFET's in oxygen-implanted silicon-on-insulator (SOI) substrates are studied. The results show significant improvements in the electron and hole mobilities near the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9d7a44c5c7c11bb336980df2b3423d6
https://doi.org/10.1109/edl.1987.26640
https://doi.org/10.1109/edl.1987.26640
Publikováno v:
IEEE Transactions on Nuclear Science. 35:1650-1652
Total-dose-radiation results for n- and p-channel silicon-on-insulator (SOI) MOSFETs fabricated using ISLANDS (oxidation of porous silicon) technology and subjected to Co-60 gamma radiation are reported. The back-gates of both n- and p-channel transi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ec715174021b4e3f451d9e3b8ec6f94
https://doi.org/10.1109/23.25514
https://doi.org/10.1109/23.25514
Autor:
H.W. Lam, C.-E. Chen, R.K. Hester, R. Sundaresan, B.-Y. Mao, Larry R. Hite, T.G.W. Blake, C. Slawinski, Mishel Matloubian
Publikováno v:
IEEE Transactions on Electron Devices. 33:1840-1841
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72cb7042432fc4f2a2fe4bad307c13fe
https://doi.org/10.1109/t-ed.1986.22763
https://doi.org/10.1109/t-ed.1986.22763
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