Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Miserev D"'
Publikováno v:
Phys. Rev. B 108, 235116 (2023)
We consider an isotropic spin-degenerate interacting uniform $D$-dimensional electron gas (DDEG) with $D > 1$ within the Luttinger-Ward (LW) formalism. We derive the asymptotically exact semiclassical/infrared limit of the LW functional at large dist
Externí odkaz:
http://arxiv.org/abs/2303.16732
Autor:
Liles, S. D., Martins, F., Miserev, D. S., Kiselev, A. A., Thorvaldson, I. D., Rendell, M. J., Jin, I. K., Hudson, F. E., Veldhorst, M., Itoh, K. M., Sushkov, O. P., Ladd, T. D., Dzurak, A. S., Hamilton, A. R.
Single holes confined in semiconductor quantum dots are a promising platform for spin qubit technology, due to the electrical tunability of the $g$-factor of holes. However, the underlying mechanisms that enable electric spin control remain unclear d
Externí odkaz:
http://arxiv.org/abs/2012.04985
Autor:
Miserev, D., Sushkov, O. P.
Publikováno v:
Phys. Rev. B 100, 205129 (2019)
Ground state of two-electron quantum dots in single-valley materials like GaAs is always a spin singlet regardless of what the potential and interactions are. This statement cannot be generalized to the multi-valley materials like $n$-doped Si. Here
Externí odkaz:
http://arxiv.org/abs/1908.02543
Autor:
Srinivasan, A., Miserev, D. S., Hudson, K. L., Klochan, O., Muraki, K., Hirayama, Y., Reuter, D., Wieck, A. D., Sushkov, O. P., Hamilton, A. R.
Publikováno v:
Phys. Rev. Lett. 118, 146801 (2017)
We investigate the relationship between the Zeeman interaction and the inversion asymmetry induced spin orbit interactions (Rashba and Dresselhaus SOIs) in GaAs hole quantum point contacts. The presence of a strong SOI results in crossing and anti-cr
Externí odkaz:
http://arxiv.org/abs/1703.04233
Autor:
Srinivasan, A., Hudson, K. L., Miserev, D. S., Yeoh, L. A., Klochan, O., Muraki, K., Hirayama, Y., Sushkov, O. P., Hamilton, A. R.
Publikováno v:
Phys. Rev. B 94, 041406(R), 2016
Zeeman splitting of 1D hole subbands is investigated in quantum point contacts (QPCs) fabricated on a (311) oriented GaAs-AlGaAs heterostructure. Transport measurements can determine the magnitude of the g-factor, but cannot usually determine the sig
Externí odkaz:
http://arxiv.org/abs/1702.08135
Autor:
Miserev, D. S., Srinivasan, A., Tkachenko, O. A., Tkachenko, V. A., Farrer, I., Ritchie, D. A., Hamilton, A. R., Sushkov, O. P.
Publikováno v:
Phys. Rev. Lett. 119, 116803 (2017)
In-plane hole g-factors measured in quantum point contacts based on p-type heterostructures strongly depend on the orientation of the magnetic field with respect to the electric current. This effect, first reported a decade ago and confirmed in a num
Externí odkaz:
http://arxiv.org/abs/1612.00572
Autor:
Miserev, D. S., Sushkov, O. P.
Publikováno v:
Phys. Rev. B 95, 085431 (2017)
The spin-orbit interaction of holes in zinc-blende semiconductors is much stronger than that of electrons. This makes the hole systems very attractive for possible spintronics applications. In three dimensions (3D) dynamics of holes is described by w
Externí odkaz:
http://arxiv.org/abs/1610.03169
Autor:
Miserev, D. S., Sushkov, O. P.
Holes in cubic semiconductors have effective spin 3/2 and very strong spin orbit interaction. Due to these factors properties of hole bound states are highly unusual. We consider a single hole bound by a spherically symmetric potential, this can be a
Externí odkaz:
http://arxiv.org/abs/1508.06030
Autor:
Miserev, D. S.
The problem of localized states in 1D systems with the relativistic spectrum, namely, graphene stripes and carbon nanotubes, has been analytically studied. The bound state as a superposition of two chiral states is completely described by their relat
Externí odkaz:
http://arxiv.org/abs/1408.5611
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