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High In-Plane Thermal Conductivity of Aluminum Nitride Thin Films

Publikováno v: ACS Nano. 15:9588-9599

High thermal conductivity materials show promise for thermal mitigation and heat removal in devices. However, shrinking the length scales of these materials often leads to significant reductions in thermal conductivities, thus invalidating their appl

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7e21e5a7223954f3a145563839a9a373
https://doi.org/10.1021/acsnano.0c09915

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Thermal conductivity measurements of sub-surface buried substrates by steady-state thermoreflectance

Autor: W. Alan Doolittle, John T. Gaskins, Jeffrey L. Braun, Jennifer K. Hite, Eric R. Hoglund, Zayd C. Leseman, Shafkat Bin Hoque, Habib Ahmad, Mirza Elahi, Patrick E. Hopkins, Kiumars Aryana, Yee Rui Koh, David H. Olson

Publikováno v: The Review of scientific instruments. 92(6)

Measuring the thermal conductivity of sub-surface buried substrates is of significant practical interests. However, this remains challenging with traditional pump-probe spectroscopies due to their limited thermal penetration depths. Here, we experime

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f38c22d283b3e3db408b22baf18c91db
https://pubmed.ncbi.nlm.nih.gov/34243549

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Reduction and Increase in Thermal Conductivity of Si Irradiated with Ga+ via Focused Ion Beam

Autor: Chester J. Szwejkowski, Mohammadhosein Ghasemi Baboly, Susan B. Rempe, Jeffrey L. Braun, Ashutosh Giri, Mirza Elahi, Zayd C. Leseman, Seyedhamidreza Alaie, Drew F. Goettler, Ying Bing Jiang, Dalaver H. Anjum, Patrick E. Hopkins, Brian F. Donovan, John T. Gaskins, Saharoui Chaieb

Publikováno v: ACS Applied Materials & Interfaces. 10:37679-37684

Focused ion beam (FIB) technology has become a valuable tool for the microelectronics industry and for the fabrication and preparation of samples at the micro/nanoscale. Its effects on the thermal transport properties of Si, however, are not well und

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::80d0494cd00d5c0c9b4ecb9c9d2352c9
https://doi.org/10.1021/acsami.8b11949

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Pulsed vacuum and etching systems: Theoretical design considerations for a pulsed vacuum system and its application to XeF2 etching of Si

Autor: Behnam Kheyraddini Mousavi, Adeeko Benga, Arash Kheyraddini Mousavi, Edidson Lima, Stephen Moya, Joseph D. Butner, Khawar Abbas, Denise Pinon, Zayd C. Leseman, Mirza Elahi

Publikováno v: Vacuum. 109:216-222

Rekindled interest has developed in pulsed vacuum systems due to their use for Xenon Difluoride (XeF2) etching systems and their usefulness in the fabrication of MEMS and nanostructures. Despite numerous applications of pulsed vacuum systems, little

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0ac1f14de56bf5a9355ede6da8166f8c
https://doi.org/10.1016/j.vacuum.2014.07.028

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Size effects on the thermal conductivity of amorphous silicon thin films

Autor: Zayd C. Leseman, Ashutosh Giri, Patrick E. Hopkins, Thomas E. Beechem, Jeffrey L. Braun, Mirza Elahi, Kateryna Artyushkova, John T. Gaskins, Pamela M. Norris, Christopher H. Baker

Publikováno v: Physical Review B. 93

We investigate thickness-limited size effects on the thermal conductivity of amorphous silicon thin films ranging from 3 to 1636 nm grown via sputter deposition. While exhibiting a constant value up to $\ensuremath{\sim}100$ nm, the thermal conductiv

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::27a7608b0310f5781f7e3409b67c307e
https://doi.org/10.1103/physrevb.93.140201

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Determination of etching parameters for pulsed XeF2etching of silicon using chamber pressure data

Autor: Tyler J. Hieber, Mohammadhosein Ghasemi Baboly, Denise Pinon, T L Ward, Zayd C. Leseman, Dipta Sarkar, Austin Schuberth, Joseph D. Butner, Khawar Abbas, Mirza Elahi

Publikováno v: Journal of Micromechanics and Microengineering. 28:045007

A technique is presented for determination of the depletion of the etchant, etched depth, and instantaneous etch rate for Si etching with XeF2 in a pulsed etching system in real time. The only experimental data required is the pressure data collected

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::40d20938d24ff719d771763dcc1c0957
https://doi.org/10.1088/1361-6439/aaa74e

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Nanoscale size effects on the mechanical properties of platinum thin films and cross-sectional grain morphology

Autor: Zayd C. Leseman, Mirza Elahi, Sahraoui Chaieb, M. Ghasemi Baboly, Khawar Abbas, Dalaver H. Anjum, Seyedhamidreza Alaie

Publikováno v: Journal of Micromechanics and Microengineering. 26:015007

The mechanical behavior of polycrystalline Pt thin films is reported for thicknesses of 75 nm, 100 nm, 250 nm, and 400 nm. These thicknesses correspond to transitions between nanocrystalline grain morphology types as found in TEM studies. Thinner sam

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4ef07942ee427f715d860675ee8f3a72
https://doi.org/10.1088/0960-1317/26/1/015007

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