Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Miroslaw Szreter"'
Publikováno v:
14th International Conference on Microwaves, Radar and Wireless Communications. MIKON - 2002. Conference Proceedings (IEEE Cat.No.02EX562).
GaN Schottky diodes and MSM UV photodetectors were fabricated on GaN/sapphire substrates. Schottky contacts were characterized in a temperature range up to 250/spl deg/C above RT. The MSM photodetector response to 300 nm laser wavelength was measured
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b609c490414a566cf8300bc6114bc146
https://doi.org/10.1109/mikon.2002.1017947
https://doi.org/10.1109/mikon.2002.1017947
Publikováno v:
13th International Conference on Microwaves, Radar and Wireless Communications. MIKON - 2000. Conference Proceedings (IEEE Cat. No.00EX428).
GaAs MSM photodetectors with AlAs/GaAs DBR structures designed for an operating wavelength of 840 nm were characterized in the frequency and time domains. The frequency response of the MSMs, using a lightwave set-up and HP8408 network analyzer, was m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ce0b7d6ff7d53e939375f7ef2c24d24
https://doi.org/10.1109/mikon.2000.914033
https://doi.org/10.1109/mikon.2000.914033
Publikováno v:
Optoelectronic Integrated Circuit Materials, Physics, and Devices.
Light induced effects on low frequency measurement of small signal driven conductance and transconductance of GaAs MESFET's have been studied. Two versions of a 1 micrometers gate length MESFET fabricated in our laboratory were evaluated; one with io
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3eb2e372d76ffc4ff7d7492f91ed19d9
https://doi.org/10.1117/12.206918
https://doi.org/10.1117/12.206918
Publikováno v:
SPIE Proceedings.
A 1 pm gate GaAs MESFET desi gned for the I ower X -bandfrequencies has been fabricated and characterized. A MOCVD—grown, Se-doped channel layer with 3Q00 cm ZVs carrier mobility and a recessed gate structure resulted in a maximum devicetransconduc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fd006ac940c3aacd71d7e9eb893eb8b
https://doi.org/10.1117/12.131010
https://doi.org/10.1117/12.131010
Publikováno v:
SPIE Proceedings.
A single state GaAs rnonolit.hic amplifier chip for L-band has been transistor gate with designed and fabricated. The design includes 1pm multifinger' polyimide bridges for the souxce intexconne- ctions and overlay capacitors with sputtered silicone
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1938880f7bee7b802fb71a7e4ebb721
https://doi.org/10.1117/12.131008
https://doi.org/10.1117/12.131008
Publikováno v:
Journal of The Electrochemical Society. 128:480-483
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::345e1847d47891d119b371ef25552989
https://doi.org/10.1149/1.2127441
https://doi.org/10.1149/1.2127441
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