Zobrazeno 1 - 10
of 112
pro vyhledávání: '"Miroslav Mikolášek"'
Autor:
Peter Ondrejka, Michaela Sojková, Valerii Kotok, Patrik Novák, Ivan Hotovy, Martin Kemény, Miroslav Mikolášek
Publikováno v:
Materials Research Express, Vol 10, Iss 6, p 065508 (2023)
Nickel-based sulfides (particularly NiS _2 ) are regarded as promising materials for highly efficient electrochemical generation and storage devices. The conventional fabrication methods of nanostructured NiS _X electrodes involve several complex ste
Externí odkaz:
https://doaj.org/article/18d60dc3410a46f5b6b21a9c6283ea42
Autor:
Edmund Dobročka, Filip Gucmann, Kristína Hušeková, Peter Nádaždy, Fedor Hrubišák, Fridrich Egyenes, Alica Rosová, Miroslav Mikolášek, Milan Ťapajna
Publikováno v:
Materials, Vol 16, Iss 1, p 20 (2022)
We report on crystal structure and thermal stability of epitaxial ε/κ-Ga2O3 thin films grown by liquid-injection metal–organic chemical vapor deposition (LI-MOCVD). Si-doped Ga2O3 films with a thickness of 120 nm and root mean square surface roug
Externí odkaz:
https://doaj.org/article/e5f936cc37314fd888339a03ebf4802b
Autor:
Wojciech Dawidowski, Beata Ściana, Katarzyna Bielak, Miroslav Mikolášek, Jakub Drobný, Jarosław Serafińczuk, Iván Lombardero, Damian Radziewicz, Wojciech Kijaszek, Arpád Kósa, Martin Florovič, Jaroslav Kováč, Carlos Algora, L’ubica Stuchlíková
Publikováno v:
Energies, Vol 14, Iss 15, p 4651 (2021)
Basic knowledge about the factors and mechanisms affecting the performance of solar cells and their identification is essential when thinking of future improvements to the device. Within this paper, we investigated the current transport mechanism in
Externí odkaz:
https://doaj.org/article/06e1e7a0993d420c91dd2629b10bae39
Autor:
Alexander P. Kobzev, Pavol Boháček, Angela Kleinová, Vlasta Sasinková, J. Huran, Miroslav Mikolášek
Publikováno v:
Current Applied Physics. 34:101-106
Photoelectrochemical water splitting devices require semiconductor photoelectrode material fulfilling a number of primary requirements such as band gap, band edge alignment and corrosion resistance to electrolyte. Amorphous silicon carbide films, und
Autor:
Ťapajna, Edmund Dobročka, Filip Gucmann, Kristína Hušeková, Peter Nádaždy, Fedor Hrubišák, Fridrich Egyenes, Alica Rosová, Miroslav Mikolášek, Milan
Publikováno v:
Materials; Volume 16; Issue 1; Pages: 20
We report on crystal structure and thermal stability of epitaxial ε/κ-Ga2O3 thin films grown by liquid-injection metal–organic chemical vapor deposition (LI-MOCVD). Si-doped Ga2O3 films with a thickness of 120 nm and root mean square surface roug
Autor:
Kristína Hušeková, Prangya Parimita Sahoo, Matej Mičušík, Karol Fröhlich, Martin Kemény, Ján Šoltýs, Ladislav Harmatha, Miroslav Mikolášek, Edmund Dobročka, Peter Ondrejka
Publikováno v:
ACS Applied Energy Materials. 4:11162-11172
Publikováno v:
Journal of Electrical Engineering. 72:256-261
In this paper, disulfides WS2 and MoS2 were successfully prepared using thermal decomposition and utilised for fabrication of supercapacitor- and water splitting electrodes. Both, energy storage and conversion performances of these electrodes were co
Autor:
Ladislav Harmatha, Peter Ondrejka, Filip Chymo, Karol Fröhlich, Martin Kemény, Kristína Hušeková, Ivan Hotovy, Miroslav Mikolášek
Publikováno v:
Journal of Electrical Engineering. 72:203-207
This paper is dedicated to preparation and analysis of metal insulator semiconductor (MIS) photoanode with a metal organic chemical vapor deposited RuO2 layer and TiO2 protection layer for photoelectrochemical water splitting. It is shown that utiliz
Autor:
Peter Ondrejka, Miroslav Mikolášek
Publikováno v:
Coatings. 13:742
The transition to a green economy is becoming an important challenge for sustainable economic growth [...]
Autor:
Miroslav Mikolášek, Ivan Hotovy, Vlastimil Rehacek, Peter Ondrejka, Ivan Kostic, Lothar Spiess, Martin Kemény
Publikováno v:
Journal of Electrical Engineering. 72:61-65
We present results on very thin NiO films which are able to detect 3 ppm of acetone, toluene and n-butyl acetate in synthetic air and to operate at 300°C. NiO films with 25 and 50 nm thicknesses were prepared by dc reactive magnetron sputtering on a