Zobrazeno 1 - 10
of 92
pro vyhledávání: '"Miroslav Micovic"'
Publikováno v:
BCICTS
We report the development of high efficiency Ka-band (33 GHz – 36 GHz) MMIC amplifiers in a highly scaled 40nm HRL’s T4A GaN MMIC process. The reported two stage power amplifiers have peak power added efficiency (PAE) of 58.5% with associated gai
Autor:
Joel C. Wong, Haw Y. Tai, Helen Fung, D. Regan, D. F. Brown, Dayward Santos, Eric M. Prophet, Shawn D. Burnham, Miroslav Micovic, A. Kurdoghlian, Jesus Magadia, Isaac Khalaf, Yan Tang, Bob Grabar
Publikováno v:
IEEE Electron Device Letters. 38:1708-1711
We report the state-of-the-art $V$ -band power performance of a scaled 40-nm gate length Al0.23Ga0.77N/AlN/GaN/Al0.08Ga0.92N double heterojunction field effect transistor (DHFET). The $200~\mu \text{m}$ ( $4\times 50 ~\mu \text{m}$ ) wide GaN DHFETs
Autor:
David F. Brown, Miroslav Micovic, Dayward Santos, Jesus Magadia, R. Bowen, Shawn D. Burnham, Robert Grabar, Joe Tai, Isaac Khalaf
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 30:480-485
HRL’s T3 GaN MMIC technology is evaluated using dc reliability experiments, including a voltage step-stress test, a temperature step-stress test, and a 3-temperature life test. The drain voltage step-stress test revealed three distinct regions of o
Publikováno v:
IEEE Electron Device Letters. 38:1445-1448
We have demonstrated highly scaled, self-aligned AlGaN/GaN fin-shaped field-effect transistors (FinFETs), which were fabricated using e-beam lithography and a regrown n+ GaN ohmic process with a sacrificial dummy gate. Our devices were very aggressiv
Autor:
Joe Tai, Joel C. Wong, Helen Fung, Hector L. Bracamontes, Eric M. Prophet, David F. Brown, A. Kurdoghlian, D. Regan, C. McGuire, Miroslav Micovic, Dayward Santos, Shawn D. Burnham, Adele E. Schmitz, Herrault Florian G, Isaac Khalaf, Yan Tang
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
We provide an overview of key challenges and technical breakthroughs that led to development of highly scaled GaN HEMT's having ft > 400 GHz and fmax > 550 GHz and the corresponding IC process. These highly scaled GaN devices have 5 times higher brea
Ultrahigh-Speed GaN High-Electron-Mobility Transistors With $f_{T}/f_{\mathrm {max}}$ of 454/444 GHz
Autor:
Samuel Kim, David F. Brown, Andrea Corrion, Miroslav Micovic, Joel Wong, Adele E. Schmitz, Helen Fung, Keisuke Shinohara, D. Regan, Yan Tang
Publikováno v:
IEEE Electron Device Letters. 36:549-551
This letter reports record RF performance of deeply scaled depletion-mode GaN-high-electron-mobility transistors (GaN-HEMTs). Based on double heterojunction AlN/GaN/AlGaN epitaxial structure, fully passivated devices were fabricated by self-aligned-g
Autor:
David F. Brown, Yan Tang, Miroslav Micovic, Andrea Corrion, Robert G. Nagele, Adele E. Schmitz, Keisuke Shinohara, Helen Fung, Peter Chen, John F. Robinson, Alexandros Margomenos, S. Kim, Thomas C. Oh, Joel C. Wong, D. Regan
Publikováno v:
IEEE Transactions on Electron Devices. 60:2982-2996
In this paper, we report state-of-the-art high frequency performance of GaN-based high electron mobility transistors (HEMTs) and Schottky diodes achieved through innovative device scaling technologies such as vertically scaled enhancement and depleti
Autor:
Isaac Khalaf, Yan Tang, Joel Wong, Miroslav Micovic, Eric M. Prophet, Joe Tai, Dayward Santos, Helen Fung, Charles McGuire, David F. Brown, Shawn D. Burnham, A. Kurdoghlian, Adele E. Schmitz, Herrault Florian G, Robert Grabar, Hector L. Bracamontes, D. Regan
Publikováno v:
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
We report the first generation of GaN MMIC circuits that are based on the latest generation of (ft > 320 GHz and fmax > 580 GHz) [1] GaN Transistors. The reported broadband Ka-band (27 GHz - 40 GHz) GaN LNA MMIC's have Noise Figure (NF) as low as 1 d
Autor:
Isaac Khalaf, Helen Fung, Miroslav Micovic, Joe Tai, Dayward Santos, Jesus Magadia, Robert Grabar, David F. Brown, A. Kurdoghlian
Publikováno v:
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
We report MMIC traveling-wave amplifiers (TWAs) fabricated using a 40 nm GaN double heterostructure FET (DHFET) technology. By varying the gate periphery within cascode gain stages, we produced a family of TWA designs with a range of gain and bandwid
Autor:
Mary Chen, Hector L. Bracamontes, R. Bowen, Pete Willadsen, Shawn D. Burnham, Paul Hashimoto, D. Wong, Miroslav Micovic, Ming Hu
Publikováno v:
physica status solidi c. 8:2399-2403
For the first time, we report on degradation mechanisms of short gate length (Lg = 0.15 µm) T-gate AlGaN/GaN HEMTs, and compare to previously reported findings for GaN field plate devices of the same gate length. Both types of studied devices were s