Zobrazeno 1 - 10
of 189
pro vyhledávání: '"Mireille Mouis"'
Autor:
Fanny Morisot, Claudio Zuliani, Mireille Mouis, Joaquim Luque, Cindy Montemont, Tony Maindron, Céline Ternon
Publikováno v:
Nanomaterials, Vol 12, Iss 6, p 935 (2022)
A randomly oriented nanowire network, also called nanonet (NN), is a nano-microstructure that is easily integrated into devices while retaining the advantages of using nanowires. This combination presents a highly developed surface, which is promisin
Externí odkaz:
https://doaj.org/article/6e927d4edfa046a08f54e1cb52851bdb
Publikováno v:
Nanomaterials, Vol 11, Iss 4, p 941 (2021)
ZnO nanowires are excellent candidates for energy harvesters, mechanical sensors, piezotronic and piezophototronic devices. The key parameters governing the general performance of the integrated devices include the dimensions of the ZnO nanowires use
Externí odkaz:
https://doaj.org/article/1ffb752854194f0a95673f05c05f1394
Autor:
Monica Vallejo-Perez, Céline Ternon, Nicolas Spinelli, Fanny Morisot, Christoforos Theodorou, Ganesh Jayakumar, Per-Erik Hellström, Mireille Mouis, Laetitia Rapenne, Xavier Mescot, Bassem Salem, Valérie Stambouli
Publikováno v:
Nanomaterials, Vol 10, Iss 9, p 1842 (2020)
Field effect transistors (FETs) based on networks of randomly oriented Si nanowires (Si nanonets or Si NNs) were biomodified using Thrombin Binding Aptamer (TBA–15) probe with the final objective to sense thrombin by electrical detection. In this w
Externí odkaz:
https://doaj.org/article/a977d19b412243b3ac3da0aa47b82e27
Autor:
Thi Thu Thuy Nguyen, Maxime Legallais, Fanny Morisot, Thibauld Cazimajou, Mireille Mouis, Bassem Salem, Valérie Stambouli, Céline Ternon
Publikováno v:
Proceedings, Vol 1, Iss 4, p 312 (2017)
In this paper, the process and electrical characteristics of DNA sensor devices based on silicon nanonet (SiNN) field-effect transistors are reported. The SiNN, another name of randomly oriented Si nanowires network, was successfully integrated into
Externí odkaz:
https://doaj.org/article/ef0bcb77238e4f6d816427d120104cd4
Autor:
Andrés Jenaro Lopez Garcia, Mireille Mouis, Thomas Jalabert, Alessandro Cresti, Gustavo Ardila
Publikováno v:
Journal of Physics D: Applied Physics
Journal of Physics D: Applied Physics, 2023, 56 (12), pp.125301. ⟨10.1088/1361-6463/acbc86⟩
Journal of Physics D: Applied Physics, 2023, 56 (12), pp.125301. ⟨10.1088/1361-6463/acbc86⟩
The question of the length dependence of the electromechanical response of semiconducting (SC) piezoelectric nanowires (NWs) was explored. We identified a new physical mechanism of piezoresponse saturation, which originates from the combination of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d3696e7d95e297af8e78af47352d3cc
https://hal.science/hal-04160829/document
https://hal.science/hal-04160829/document
Publikováno v:
Nanotechnology
Nanotechnology, 2023, 34 (11), pp.115402. ⟨10.1088/1361-6528/acac35⟩
Nanotechnology, 2023, 34 (11), pp.115402. ⟨10.1088/1361-6528/acac35⟩
Semiconducting piezoelectric nanowires (NWs) are promising candidates to develop highly efficient mechanical energy transducers made of biocompatible and non-critical materials. The increasing interest in mechanical energy harvesting makes the invest
Publikováno v:
Journal of Physics D: Applied Physics
Journal of Physics D: Applied Physics, 2022, 55 (40), pp.405502. ⟨10.1088/1361-6463/ac8251⟩
Journal of Physics D: Applied Physics, 2022, 55 (40), pp.405502. ⟨10.1088/1361-6463/ac8251⟩
ZnO nanowires are excellent candidates for energy harvesters, mechanical sensors, piezotronic and piezophototronic devices. These nanowires are usually non-intentionally n-doped during their growth. The essential role of doping, surface traps and sur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7aa81f6cb32001bb1cf24ba69e40a56f
https://hal.univ-grenoble-alpes.fr/hal-03765862/document
https://hal.univ-grenoble-alpes.fr/hal-03765862/document
Publikováno v:
2021 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers)
2021 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers), Jun 2021, Orlando, United States. pp.1056-1059, ⟨10.1109/TRANSDUCERS50396.2021.9495621⟩
2021 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers), Jun 2021, Orlando, United States. pp.1056-1059, ⟨10.1109/TRANSDUCERS50396.2021.9495621⟩
Online virtual conference; International audience; Piezoelectric semiconductor transducers based on nanowires (NWs) made of ZnO, GaN among other materials have drawn a lot of attention for energy harvesting and sensing applications. Despite the exist
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2021, 68 (6), pp.3070-3073. ⟨10.1109/TED.2021.3069936⟩
IEEE Transactions on Electron Devices, 2021, 68 (6), pp.3070-3073. ⟨10.1109/TED.2021.3069936⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2021, 68 (6), pp.3070-3073. ⟨10.1109/TED.2021.3069936⟩
IEEE Transactions on Electron Devices, 2021, 68 (6), pp.3070-3073. ⟨10.1109/TED.2021.3069936⟩
Junctionless transistors (JLTs) have promising advantages such as structural simplicity without p-n-junctions and bulk conduction-based operation for the realization of advanced complementary metal oxide semiconductor (CMOS) technologies. Here the ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a938d01938184d0465804f0be7e87502
https://hal.archives-ouvertes.fr/hal-03194757
https://hal.archives-ouvertes.fr/hal-03194757
Autor:
Mireille Mouis, Céline Ternon, Thibauld Cazimajou, T. Arjmand, Thi Thu Thuy Nguyen, Bassem Salem, Maxime Legallais
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, 2020, 128 (20), pp.204501. ⟨10.1063/5.0023322⟩
Journal of Applied Physics, American Institute of Physics, 2020, 128 (20), pp.204501. ⟨10.1063/5.0023322⟩
Journal of Applied Physics, 2020, 128 (20), pp.204501. ⟨10.1063/5.0023322⟩
Journal of Applied Physics, American Institute of Physics, 2020, 128 (20), pp.204501. ⟨10.1063/5.0023322⟩
International audience; In this paper, we highlight the key role played by Si nanowire/nanowire junctions in the electrical performance of field-effect transistors (FETs) based on percolating Si nanowire (SiNW) networks, also called nanonets. Using o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0b7b6434883955b38ac5f0b9eb83c308
https://hal.science/hal-03024377
https://hal.science/hal-03024377