Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Mireille Maenhoudt"'
Autor:
Staf Verhaegen, Mireille Maenhoudt, Vincent Wiaux, Sang Uhk Rhie, Lawrence S. Melvin, Brian Ward, Kevin Lucas, Hua Song
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 26:2434-2440
Double patterning is a manufacturing process targeted for the 22nm half pitch manufacturing node that harbors strong potential for reaching high volume manufacturing. The double patterning process requires twice as many manufacturing steps for a devi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae576eb04ba536f952656d7ec48a4ac7
https://doi.org/10.1116/1.3021377
https://doi.org/10.1116/1.3021377
Autor:
Monique Ercken, Mireille Maenhoudt, Kurt G. Ronse, Shaunee Cheng, Geert Vandenberghe, Peter Leunissen
Publikováno v:
Journal of Photopolymer Science and Technology. 19:5-8
The Photopolymer Science and Technology Award No. 062100, the Best Paper Award 2006, was presented to Mireille Maenhoudt, Geert Vandenberghe, Monique Ercken, Shaunee Cheng, Peter Leunissen and Kurt Ronse, all from IMEC, for their outstanding contribu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cc42b43c6506cdb44b16cd0ae2e530a
https://doi.org/10.2494/photopolymer.19.5
https://doi.org/10.2494/photopolymer.19.5
Autor:
Anne-Marie Goethals, Geert Vandenberghe, Mireille Maenhoudt, Monique Ercken, Ivan Pollentier, P. De Bisschop, Kurt G. Ronse
Publikováno v:
Journal of Photopolymer Science and Technology. 14:333-340
It is expected that 193nm lithography will be introduced in manufacturing for the 100nm node. In this paper, the ArF lithography options for the 100nm node have been investigated and the status and critical issues for process implementation are revie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d27edb542f0c18cbf70db77cb9acfd9
https://doi.org/10.2494/photopolymer.14.333
https://doi.org/10.2494/photopolymer.14.333
Autor:
Shinji Tarutani, Vincent Truffert, Geert Vandenberghe, L. Van Look, Mireille Maenhoudt, Frederic Lazzarino, Joost Bekaert, Vincent Wiaux, Mario Reybrouck
Publikováno v:
SPIE Proceedings.
A strong demand exists for techniques that can further extend the application of ArF immersion lithography. Besides techniques like litho-friendly design, dual exposure or patterning schemes, customized illumination modes, also alternative processing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a4f2efbb088dce8db05fea6188dd30a
https://doi.org/10.1117/12.848228
https://doi.org/10.1117/12.848228
Autor:
Yong-Min Yoo, Patrick Wong, Hessel Sprey, Diziana Vangoidsenhoven, Tae-Ho Yoon, Hyung-Sang Park, M. Demand, Tom Vandeweyer, S. Locorotondo, Andy Miller, Mireille Maenhoudt, Julien Beynet
Publikováno v:
SPIE Proceedings.
The inherent advantages of the Plasma-Enhanced Atomic Layer Deposition (PEALD) technologyexcellent conformality and within wafer uniformity, no loading effectovercome the limitations in this domain of the standard PECVD technique for spacer depos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3880fed64873f950d7e4585d945e1a1
https://doi.org/10.1117/12.836979
https://doi.org/10.1117/12.836979
Autor:
Vincent Truffert, Tom Vandeweyer, Janko Versluijs, Staf Verhaegen, Patrick Wong, Andy Miller, Vincent Wiaux, Geert Vandenberghe, Monique Ercken, Joost Bekaert, Roel Gronheid, Mireille Maenhoudt
Publikováno v:
SPIE Proceedings.
Several options are being explored to extend device scaling towards and beyond the 32nm Half Pitch (HP) using the current immersion lithography tools and this in order to compete with the costly EUV technology that is still under development. These e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48054c9aceefa5918d41e677c3abdd89
https://doi.org/10.1117/12.854658
https://doi.org/10.1117/12.854658
Autor:
M. Moelants, Mireille Maenhoudt, Joost Bekaert, Vincent Truffert, A. Miller, Tony Wu, Frederic Lazzarino
Publikováno v:
SPIE Proceedings.
Contact Hole (CH) resolution is limited by the low aerial image contrast using dark field masks. Moreover the 2- Dimensional character of CH is a limiting factor in the use of extreme Resolution Enhancement Techniques for reaching the smallest pitch.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fe735e66465a45a6ee699206b0b9db0
https://doi.org/10.1117/12.814867
https://doi.org/10.1117/12.814867
Autor:
John Quaedackers, Gayle Murdoch, Marc Leblans, Henry Megens, Mircea Dusa, Timon Fliervoet, Frank Bornebroek, Jo Finders, Birgitt Hepp, Christian Marinus Leewis, Tom Vandeweyer, Efrain Altamirano Sanchez, Evert Mos, Mireille Maenhoudt, Remco Jochem Sebastiaan Groenendijk, Bert Vleeming
Publikováno v:
SPIE Proceedings.
In this paper we present a methodology to investigate and optimize the CD balance between the four features of a final 32nm lines and space pattern created by spacer pitch doubling. Metrology (SEM and scatterometry) was optimized to measure and separ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc29ef07b0a290114743c730435920bc
https://doi.org/10.1117/12.814091
https://doi.org/10.1117/12.814091
Autor:
Staf Verhaegen, Mireille Maenhoudt, Fumio Iwamoto, Sergei V. Postnikov, Takashi Matsuda, Geert Vandenberghe, Vincent Wiaux
Publikováno v:
SPIE Proceedings.
Double Patterning allows to further extend the use of water immersion lithography at its maximum numerical aperture NA=1.35. Splitting of design layers to recombine through Double Patterning (DP) enables an effective resolution enhancement. Single po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c96c61eec854f6348b4c4efc7d006bd3
https://doi.org/10.1117/12.804697
https://doi.org/10.1117/12.804697
Autor:
Vincent Wiaux, Petrisor Panaite, Staf Verhaegen, Gerard Luk-Pat, Mireille Maenhoudt, Kevin Lucas, Christopher Cork
Publikováno v:
Photomask Technology 2008.
For keeping pace with Moore's Law of reducing the feature sizes on integrated circuits, the driving forces have been reductions in the exposure-tool wavelength, and increases in the lens numerical aperture (NA). With extreme ultra-violet (EUV) lithog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ee18de0b9b9e002abad134503ed68bd
https://doi.org/10.1117/12.801545
https://doi.org/10.1117/12.801545