Zobrazeno 1 - 10
of 187
pro vyhledávání: '"Mireia Bargallo Gonzalez"'
Autor:
Maryam Akbari, Sattar Mirzakuchaki, Daniel Arumi, Salvador Manich, Alvaro Gomez-Pau, Francesca Campabadal, Mireia Bargallo Gonzalez, Rosa Rodriguez-Montanes
Publikováno v:
IEEE Access, Vol 11, Pp 66682-66693 (2023)
Hardware-based security primitives like True Random Number Generators (TRNG) have become a crucial part in protecting data over communication channels. With the growth of internet and cloud storage, TRNGs are required in numerous cryptographic operat
Externí odkaz:
https://doaj.org/article/e68dfd085a36443d89b4b8cde2add0a6
Autor:
Samuel Poblador, Jordi Suñé, Francesca Campabadal, M. Saludes-Tapia, Enrique Miranda, Mireia Bargallo Gonzalez
Publikováno v:
IEEE Transactions on Electron Devices. 68:5981-5988
Complementary resistive switching (CRS) arises when two bipolar-mode memristive devices are antiserially connected, forming a single functional structure. The combined effect of both memristors leads to the appearance of high (HRS) and low (LRS) resi
Autor:
Francesca Campabadal, M. Maestro-Izquierdo, Jordi Suñé, Enrique Miranda, Mireia Bargallo Gonzalez
Publikováno v:
IEEE Electron Device Letters. 42:565-568
As theoretically predicted by Prof. Chua, the input signal frequency has a major impact on the electrical behavior of memristors. According with one of the so-called fingerprints of such devices, the resistive window, i.e. the difference between the
Autor:
Mireia Bargallo Gonzalez, Jordi Suñé, Francesca Campabadal, Jordi Munoz Gorriz, Enrique Miranda
Publikováno v:
IEEE Electron Device Letters. 41:1770-1773
Time statistics for successive breakdown (BD) events in Al2O3/HfO2-based nanolaminates aimed to the development of multilevel one-time programmable (OTP) memory cells is investigated. The clustering model is shown to account for the departure of the
Autor:
Binbin Yang, Daniel Arumi, Salvador Manich, Alvaro Gomez-Pau, Rosa Rodriguez-Montanes, Juan Bautista Roldan, Mireia Bargallo Gonzalez, Francesca Campabadal, Liang Fang
Publikováno v:
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Universitat Politècnica de Catalunya (UPC)
© 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new c
Autor:
Alvaro Gomez-Pau, Rosa Rodriguez-Montanes, Binbin Yang, Liang Fang, Mireia Bargallo Gonzalez, Francesca Campabadal, Salvador Manich, D. Arumi
Publikováno v:
Electronics
Volume 10
Issue 15
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Electronics, Vol 10, Iss 1842, p 1842 (2021)
Volume 10
Issue 15
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Electronics, Vol 10, Iss 1842, p 1842 (2021)
Non-volatile memory cells are exposed to adversary attacks since any active countermeasure is useless when the device is powered off. In this context, this work proposes the association of two serial RRAM devices as a basic cell to store sensitive da
Autor:
Alvaro Gomez-Pau, Liang Fang, Francesca Campabadal, Salvador Manich, Rosa Rodriguez-Montanes, Binbin Yang, D. Arumi, Mireia Bargallo Gonzalez
Publikováno v:
Electronics
Volume 10
Issue 15
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Electronics, Vol 10, Iss 1831, p 1831 (2021)
Volume 10
Issue 15
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Electronics, Vol 10, Iss 1831, p 1831 (2021)
In this paper, the modulation of the conductance levels of resistive random access memory (RRAM) devices is used for the generation of random numbers by applying a train of RESET pulses. The influence of the pulse amplitude and width on the device re
Autor:
Francesca Campabadal, Francisco Jiménez-Molinos, M. Zabala, Kristjan Kalam, Mireia Bargallo Gonzalez, Juan Bautista Roldán, Aile Tamm
Publikováno v:
2021 13th Spanish Conference on Electron Devices (CDE).
In this work, current fluctuations in the high resistance state of filamentary TiN/Ti/HfO 2 /Pt memristors are investigated. It has been found that random telegraph noise due to electron trapping and de-trapping processes into and from defects locate
Autor:
Yolanda Morilla, P. Martin-Holgado, Mireia Bargallo Gonzalez, Francesca Campabadal, M. Maestro-Izquierdo
Publikováno v:
2021 13th Spanish Conference on Electron Devices (CDE).
In this work, the effect of 60Co gamma radiation on the electrical properties of TiN/Ti/HfO 2 /W RRAM devices is investigated through systematic and extensive measurements of biased and unbiased devices during irradiation. For this purpose, first an
Autor:
Francisco Jiménez-Molinos, Juan Bautista Roldán, Mireia Bargallo Gonzalez, Héctor García, Helena Castán, Salvador Dueñas, Francesca Campabadal, Enrique Miranda
Publikováno v:
2021 13th Spanish Conference on Electron Devices (CDE).
Hafnium oxide based memristors were fabricated and multilevel programming driven by a capacitor discharge current through the device was performed. Furthermore, the dynamic memdiode model was used for modeling and analyzing the experimental data.