Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Minya Ma"'
Publikováno v:
Microscopy of Semiconducting Materials 2001 ISBN: 9781351074629
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e7f58857619fe08d1f6ba88799cfa5a
https://doi.org/10.1201/9781351074629-84
https://doi.org/10.1201/9781351074629-84
Publikováno v:
Materials Science and Engineering: B. :170-173
The effect of annealing in nitrogen atmosphere on the formation of crystal defects in the OSF-ring of Czochralski silicon has been studied by comparison with samples annealed in oxygen atmosphere by using optical and electron beam based methods. By a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47fb41d82522908465d75c2825b20610
https://doi.org/10.1016/s0921-5107(01)00985-0
https://doi.org/10.1016/s0921-5107(01)00985-0
Publikováno v:
Journal of Crystal Growth. 234:296-304
Czochralski silicon (CZ-Si) crystals were grown using different V=G ratios (V: growth rate, G: axial temperature gradient) of 0.23 mm 2 /1C min and 0.38 mm 2 /1C min, respectively, while the axial temperature gradient near the melt– crystal interfa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::934f2c64f4d966de0ffc54ff17ee54f7
https://doi.org/10.1016/s0022-0248(01)01705-5
https://doi.org/10.1016/s0022-0248(01)01705-5
Publikováno v:
Solid State Phenomena. :211-216
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58f771e81c05d47c94850e27fce821b9
https://doi.org/10.4028/www.scientific.net/ssp.78-79.211
https://doi.org/10.4028/www.scientific.net/ssp.78-79.211
Publikováno v:
Journal of Crystal Growth. 218:232-238
Three different Czochralski (CZ) techniques, referred to as normal, cusp magnetic field (CMF) and electromagnetic field (EMF) methods, were used to grow CZ-Si crystals, respectively. The behavior of defects in these grown CZ-Si crystals was systemati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f9519e178ad373c496ee2918c62440b
https://doi.org/10.1016/s0022-0248(00)00584-4
https://doi.org/10.1016/s0022-0248(00)00584-4
Publikováno v:
Journal of Crystal Growth. 208:282-288
Electromagnetic Czochralski method is newly developed to grow CZ-Si crystal, thus crystals obtained by this technique are called as the EMCZ-Si crystal. Defects in the EMCZ-Si crystals were, for the first time, studied by multi-chroic infrared light
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca5e53198cab8ab1e1bb9caf9fafb7b9
https://doi.org/10.1016/s0022-0248(99)00477-7
https://doi.org/10.1016/s0022-0248(99)00477-7
Publikováno v:
Journal of Crystal Growth. 205:50-58
CZ-Si crystals were grown under three different cusp magnetic field (CMF) configurations, in which the CMF center was positioned at the melt-free surface, 20 mm above and 20 mm below the melt-free surface; they were thus called the “surface”, “
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b2b1e8152755629a84617b5c3276be1
https://doi.org/10.1016/s0022-0248(99)00255-9
https://doi.org/10.1016/s0022-0248(99)00255-9
Autor:
Zhenhong Mai, Tomoya Ogawa, Enge Wang, Minya Ma, Chaoying Wang, Jiangong Guo, Xucun Ma, Toshihide Tsuru
Publikováno v:
Journal of Physics: Condensed Matter. 11:L191-L197
A structure of C3N4 and diamond multilayers on Si(100) substrate was prepared by plasma enhanced chemical vapour deposition and magnetron sputtering techniques. Morphology observation and chemical composition analysis of the structure were performed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94da737e1bcf4874fb6063589c6f0608
https://doi.org/10.1088/0953-8984/11/20/101
https://doi.org/10.1088/0953-8984/11/20/101
Autor:
Tomoya Ogawa, Minya Ma
Publikováno v:
Philosophical Magazine A. 74:477-493
Dislocation walls on {111} and {110) planes in vapour phase grown ZnSe crystals were studied by light scattering tomography (LST), the cathodoluminescence mode of scanning electron microscopy (CL-SEM) and molten KOH etching. Many Y shaped nodes and h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c11e03307304b8055f8aaa56756c65b
https://doi.org/10.1080/01418619608242156
https://doi.org/10.1080/01418619608242156
Autor:
Tomoya Ogawa, Minya Ma
Publikováno v:
Philosophical Magazine A. 72:113-120
A new structure of piled-up dislocations, called a dislocation wall, was observed by light-scattering tomography (LST) for the first time on some {111} planes in a ZnSe crystal grown by a vapour phase method. The walls are flat platelets, about 10–
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e40c7632fb895003073a6c59aa74b13b
https://doi.org/10.1080/01418619508239585
https://doi.org/10.1080/01418619508239585