Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Minwho Lim"'
Autor:
Hee-Jae Lee, Geon-Hee Lee, Seung-Hwan Chung, Dong-Wook Byun, Michael A. Schweitz, Dae Hwan Chun, Nack Yong Joo, Minwho Lim, Tobias Erlbacher, Sang-Mo Koo
Publikováno v:
Micro, Vol 3, Iss 4, Pp 775-784 (2023)
The high breakdown electric field, n-type doping capability, availability of high-quality substrates, and high Baliga’s figure of merit of Ga2O3 demonstrate its potential as a next-generation power semiconductor material. However, the thermal condu
Externí odkaz:
https://doaj.org/article/6cd7942e5e084d04a99e15c6c2957133
Publikováno v:
Materials Science Forum. 1090:127-133
For the ongoing commercialization of power devices based on 4H-SiC, increasing the yield and improving the reliability of these devices is becoming more and more important. In this investigation, gate oxide on 4H-SiC was examined by time-zero dielect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea2fd109445298b20215286f3f9276d5
https://doi.org/10.4028/p-4i3rhf
https://doi.org/10.4028/p-4i3rhf
Autor:
Minwho Lim, Constantin Csato, Julietta Förthner, Oleg Rusch, Kevin Ehrensberger, Barbara Kupfer, Susanne Beuer, Susanne Oertel, Dong Wook Byun, Seong Jun Kim, Sang Mo Koo, Hoon Kyu Shin, Tobias Erlbacher
Publikováno v:
Key Engineering Materials. 945:55-59
In this paper, the modeling of SJ-MOSFETs beyond the voltage class of 3.3 kV simulated with verified deep aluminum box-like shaped profiles by using TCAD simulation is described. The simulation results are used to investigate the influence of ion imp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cff779c3fc690ce6b18b4dad110f89c
https://doi.org/10.4028/p-hyy2l9
https://doi.org/10.4028/p-hyy2l9
Autor:
Min-Sik Kang, Seongjun Kim, Anton J. Bauer, Hyun-Chul Kim, Tobias Erlbacher, Min-Jae Kang, Tran Viet Cuong, Nam-Suk Lee, Hong-Ki Kim, Hoon-Kyu Shin, Seonghoon Jeong, Minwho Lim
Publikováno v:
Journal of Nanomaterials, Vol 2019 (2019)
In this work, the ohmic contact mechanism of Ni electrodes on C-faced 4H-n-SiC was investigated by evaluating the electrical and microstructural properties in the contact interface as a function of annealing temperatures ranging from 950 to 1100°C.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4e758119b6971ab5cdecacfa594a4777
https://doi.org/10.1155/2019/5231983
https://doi.org/10.1155/2019/5231983