Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Mintun, Peter"'
Autor:
Anderson, Christopher P., Bourassa, Alexandre, Miao, Kevin C., Wolfowicz, Gary, Mintun, Peter J., Crook, Alexander L., Abe, Hiroshi, Hassan, Jawad Ul, Son, Nguyen T., Ohshima, Takeshi, Awschalom, David D.
Publikováno v:
Science 366, 1225 (2019)
Spin defects in silicon carbide have exceptional electron spin coherence with a near-infrared spin-photon interface in a material amenable to modern semiconductor fabrication. Leveraging these advantages, we successfully integrate highly coherent sin
Externí odkaz:
http://arxiv.org/abs/1906.08328
Autor:
Mintun, Peter, Laurance, Emily
Publikováno v:
American Harp Journal. Winter2024, Vol. 29 Issue 2, p24-29. 6p.
Autor:
Yeats, Andrew L., Mintun, Peter J., Pan, Yu, Richardella, Anthony, Buckley, Bob B., Samarth, Nitin, Awschalom, David D.
Publikováno v:
PNAS 114 (39) 10379-10383 (2017)
Many proposed experiments involving topological insulators (TIs) require spatial control over time-reversal symmetry and chemical potential. We demonstrate reconfigurable micron-scale optical control of both magnetization (which breaks time-reversal
Externí odkaz:
http://arxiv.org/abs/1704.00831
Autor:
Yeats, Andrew L., Pan, Yu, Richardella, Anthony, Mintun, Peter J., Samarth, Nitin, Awschalom, David D.
Publikováno v:
Science Advances 1, e1500640 (2015)
Topological insulators (TIs) have attracted much attention due to their spin-polarized surface and edge states, whose origin in symmetry gives them intriguing quantum-mechanical properties. Robust control over the chemical potential of TI materials i
Externí odkaz:
http://arxiv.org/abs/1503.01523
Autor:
Mintun, Peter James
The field of quantum information processing aims to leverage the unique physics of quantum mechanics to develop new strategies for applications such as computation, communications, and sensing. Two subfields have emerged as compelling platforms: (i)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e26a2571f89b16ad695413f5f7c555b
Autor:
Laorenza, Daniel W., Kairalapova, Arailym, Bayliss, Sam L., Goldzak, Tamar, Greene, Samuel M., Weiss, Leah R., Deb, Pratiti, Mintun, Peter J., Collins, Kelsey A., Awschalom, David D., Berkelbach, Timothy C., Freedman, Danna E.
The inherent atomistic precision of synthetic chemistry enables bottom-up structural control over quantum bits, or qubits, for quantum technologies. Tuning paramagnetic molecular qubits that feature optical-spin initialization and readout is a crucia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::81287fb4fbad1ec1c0e839297c38ea9e
https://eprints.gla.ac.uk/264960/1/264960.pdf
https://eprints.gla.ac.uk/264960/1/264960.pdf
Autor:
P. Anderson, Christopher, Bourassa, Alexandre, C. Miao, Kevin, Wolfowicz, Gary, J. Mintun, Peter, L. Crook, Alexander, Abe, Hiroshi, Ul Hassan, Jawad, T. Son, Nguyen, Ohshima, Takeshi, D. Awschalom, David, Hiroshi, Abe, Takeshi, Ohshima
Publikováno v:
Science. 366:1225-1230
Spin defects in silicon carbide have the advantage of exceptional electron spin coherence combined with a near-infrared spin-photon interface, all in a material amenable to modern semiconductor fabrication. Leveraging these advantages, we integrated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::5a5b59deceb3453b79ce9b4ab20b3a41
https://repo.qst.go.jp/records/78336
https://repo.qst.go.jp/records/78336
Akademický článek
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Autor:
Laorenza, Daniel W., Kairalapova, Arailym, Bayliss, Sam L., Goldzak, Tamar, Greene, Samuel M., Weiss, Leah R., Deb, Pratiti, Mintun, Peter J., Collins, Kelsey A., Awschalom, David D., Berkelbach, Timothy C., Freedman, Danna E.
Publikováno v:
Journal of the American Chemical Society; 12/22/2021, Vol. 143 Issue 50, p21350-21363, 14p
Autor:
Fataftah, Majed S., Bayliss, Sam L., Laorenza, Daniel W., Wang, Xiaoling, Phelan, Brian T., Wilson, C. Blake, Mintun, Peter J., Kovos, Berk D., Wasielewski, Michael R., Han, Songi, Sherwin, Mark S., Awschalom, David D., Freedman, Danna E.
Publikováno v:
Journal of the American Chemical Society; 12/2/2020, Vol. 142 Issue 48, p20400-20408, 9p