Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Mintun, P. J."'
Spin-bearing molecules are promising building blocks for quantum technologies as they can be chemically tuned, assembled into scalable arrays, and readily incorporated into diverse device architectures. In molecular systems, optically addressing grou
Externí odkaz:
http://arxiv.org/abs/2004.07998
Autor:
Anderson, Christopher P., Bourassa, Alexandre, Miao, Kevin C., Wolfowicz, Gary, Mintun, Peter J., Crook, Alexander L., Abe, Hiroshi, Hassan, Jawad Ul, Son, Nguyen T., Ohshima, Takeshi, Awschalom, David D.
Publikováno v:
Science 366, 1225 (2019)
Spin defects in silicon carbide have exceptional electron spin coherence with a near-infrared spin-photon interface in a material amenable to modern semiconductor fabrication. Leveraging these advantages, we successfully integrate highly coherent sin
Externí odkaz:
http://arxiv.org/abs/1906.08328
Autor:
Yeats, Andrew L., Mintun, Peter J., Pan, Yu, Richardella, Anthony, Buckley, Bob B., Samarth, Nitin, Awschalom, David D.
Publikováno v:
PNAS 114 (39) 10379-10383 (2017)
Many proposed experiments involving topological insulators (TIs) require spatial control over time-reversal symmetry and chemical potential. We demonstrate reconfigurable micron-scale optical control of both magnetization (which breaks time-reversal
Externí odkaz:
http://arxiv.org/abs/1704.00831
Autor:
Yeats, Andrew L., Pan, Yu, Richardella, Anthony, Mintun, Peter J., Samarth, Nitin, Awschalom, David D.
Publikováno v:
Science Advances 1, e1500640 (2015)
Topological insulators (TIs) have attracted much attention due to their spin-polarized surface and edge states, whose origin in symmetry gives them intriguing quantum-mechanical properties. Robust control over the chemical potential of TI materials i
Externí odkaz:
http://arxiv.org/abs/1503.01523
Autor:
Mellnik, A. R., Lee, J. S., Richardella, A., Grab, J. L., Mintun, P. J., Fischer, M. H., Vaezi, A., Manchon, A., Kim, E. -A., Samarth, N., Ralph, D. C.
Magnetic devices are a leading contender for implementing memory and logic technologies that are nonvolatile, that can scale to high density and high speed, and that do not suffer wear-out. However, widespread applications of magnetic memory and logi
Externí odkaz:
http://arxiv.org/abs/1402.1124
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Akademický článek
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Autor:
Laorenza, Daniel W., Kairalapova, Arailym, Bayliss, Sam L., Goldzak, Tamar, Greene, Samuel M., Weiss, Leah R., Deb, Pratiti, Mintun, Peter J., Collins, Kelsey A., Awschalom, David D., Berkelbach, Timothy C., Freedman, Danna E.
Publikováno v:
Journal of the American Chemical Society; 12/22/2021, Vol. 143 Issue 50, p21350-21363, 14p
Autor:
Fataftah, Majed S., Bayliss, Sam L., Laorenza, Daniel W., Wang, Xiaoling, Phelan, Brian T., Wilson, C. Blake, Mintun, Peter J., Kovos, Berk D., Wasielewski, Michael R., Han, Songi, Sherwin, Mark S., Awschalom, David D., Freedman, Danna E.
Publikováno v:
Journal of the American Chemical Society; 12/2/2020, Vol. 142 Issue 48, p20400-20408, 9p
Autor:
Fataftah, Majed S., Bayliss, Sam L., Laorenza, Daniel W., Wang, Xiaoling, Phelan, Brian T., Wilson, C. Blake, Mintun, Peter J., Kovos, Berk D., Wasielewski, Michael R., Han, Songi, Sherwin, Mark S., Awschalom, David D., Freedman, Danna E.
Publikováno v:
Journal of the American Chemical Society; December 2020, Vol. 142 Issue: 48 p20400-20408, 9p