Optical properties of InGaN quantum wells

Autor: Chichibu, S.F ^*, Abare, A.C, Mack, M.P, Minsky, M.S, Deguchi, T, Cohen, D, Kozodoy, P, Fleischer, S.B, Keller, S, Speck, J.S, Bowers, J.E, Hu, E, Mishra, U.K, Coldren, L.A, DenBaars, S.P, Wada, K, Sota, T, Nakamura, S

Publikováno v: In Materials Science & Engineering B 1999 59(1):298-306

Well-width dependent studies of InGaN-GaN single-quantum wells using time-resolved photoluminescence techniques.

Autor: Chi-Kuang Sun, Keller, S., Tien-Lung Chiu, Wang, G., Minsky, M.S., Bowers, J.E., DenBaars, S.P.

Publikováno v: IEEE Journal of Selected Topics in Quantum Electronics; 1997, Vol. 3 Issue 3, p731-738, 8p

MOCVD Growth and Properties of InGaN/GaN Multi-Quantum Wells

Autor: Keller, S., Cabané, F., Minsky, M.S., Wu, Xing Hui, Mack, M.P., Speck, James S., Hu, E., Coldren, L.A., Mishra, Umesh K., DenBaars, Steven P.

Publikováno v: Materials Science Forum; February 1998, Vol. 264 Issue: 1 p1157-1160, 4p

Photoluminescence excitation spectroscopy yields band gap of Ga[sub 0.5]In[sub 0.5]P containing....

Autor: Fouquet, J.E., Minsky, M.S.

Publikováno v: Applied Physics Letters; 12/6/1993, Vol. 63 Issue 23, p3212, 3p, 4 Graphs

Optical characterization of InGaN/GaN quantum well structures with Si-doped barriers.

Autor: Vaschenko, G., Assis, L.S., Pidcock, R.L., Menoni, C.S., Minsky, M.S., Keller, S., Hu, E., DenBaars, S.P.

Publikováno v: Technical Digest Summaries of papers presented at the Conference on Lasers & Electro-Optics Postconference Edition CLEO '99 Conference on Lasers & Electro-Optics (IEEE Cat No99CH37013); 1999, p98-99, 2p