Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Minsik Ahn"'
Publikováno v:
Electronics
Volume 10
Issue 9
Electronics, Vol 10, Iss 1028, p 1028 (2021)
Volume 10
Issue 9
Electronics, Vol 10, Iss 1028, p 1028 (2021)
In this paper, a new topology for a high-power single-pole-double-throw (SPDT) antenna switch is presented, and its loss mechanisms are fully analyzed. The differential architecture is employed in the proposed switch implementation to prevent unwante
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1b6badd8acc2a920c41ca9a13342b01e
Autor:
Hyun-Woong Kim, Chang-Ho Lee, Joy Laskar, Ockgoo Lee, Hyungwook Kim, Youngchang Yoon, Hyoungsoo Kim, Minsik Ahn
Publikováno v:
IEEE Microwave and Wireless Components Letters. 27:1137-1139
We present a 1.9-GHz high-power-handling complementary metal-oxide-semiconductor (CMOS) transmit/ receive (T/R) switch with the impedance transformation technique (ITT). The losses of the T/R switch, including matching networks, are analyzed, and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8bc6faab58d7bb97d36001a64c8e257
https://doi.org/10.1109/lmwc.2017.2758321
https://doi.org/10.1109/lmwc.2017.2758321
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 57:2661-2670
A 33-dBm P 0.1-dB single-pole double-throw antenna switch is designed and implemented using a standard 0.18-mum CMOS process at 1.8 GHz. An analysis shows a relation between parasitic junction capacitors and substrate resistance for low insertion los
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12d3077da3b7b1d668b8312c6656b00e
https://doi.org/10.1109/tmtt.2009.2031928
https://doi.org/10.1109/tmtt.2009.2031928
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 56:1053-1062
Analysis and design techniques of charge-pump-based RF antenna-switch controllers are presented. Loading effects of RF antenna switches that cause voltage drop of the controller have been identified and embedded in the analysis. The proposed analysis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e0dac9396d0dad55629db9ec6021dde
https://doi.org/10.1109/tcsi.2009.2016129
https://doi.org/10.1109/tcsi.2009.2016129
Publikováno v:
IEEE Microwave and Wireless Components Letters. 20:619-621
A new CMOS switched capacitor is developed to be used for high-power applications such as a power amplifier, where high voltage handling capability and low distortion are two major factors. In order to demonstrate superior performance of the proposed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0af5fc6ff0b71a579de998dd3b0918bf
https://doi.org/10.1109/lmwc.2010.2068282
https://doi.org/10.1109/lmwc.2010.2068282
Publikováno v:
IEEE Microwave and Wireless Components Letters. 17:682-684
A novel high power CMOS RF switch using the substrate body switching technique in a multistack structure is designed, implemented, and characterized in a standard 0.18- triple-well CMOS process. One of the stacked devices in the receive side has a bo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fca892dade254ca1b731730742fa8302
https://doi.org/10.1109/lmwc.2007.903462
https://doi.org/10.1109/lmwc.2007.903462
Publikováno v:
IEEE Microwave and Wireless Components Letters. 13:434-436
Continuously variable ferroelectric (BST on sapphire) phase shifters based on all-pass networks are presented. An all-pass network phase shifter consists of only lumped LC elements, and thus the total size of the phase shifter is kept to less than 2.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::655343d1e72a48cf6401d854e3fa4d9c
https://doi.org/10.1109/lmwc.2003.818521
https://doi.org/10.1109/lmwc.2003.818521
Publikováno v:
2010 IEEE Radio Frequency Integrated Circuits Symposium.
A high-power single-pole-double-throw (SPDT) antenna switch using a differential architecture and a multi-section impedance transformation technique is demonstrated in a standard 0.18-µm CMOS process. The differential architecture prevents unwanted
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f78083dfda5afeab9eb35922059b7438
https://doi.org/10.1109/rfic.2010.5477353
https://doi.org/10.1109/rfic.2010.5477353
Publikováno v:
2008 Asia-Pacific Microwave Conference.
A high PA and an antenna switch were implemented in a single die with low noise amplifier to study feasibility of integration of all the RF front end components in a standard bulk CMOS process. Low voltage operation which is the biggest obstacle to i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f73c25c6a6d35e9d1aaa6ace5631f248
https://doi.org/10.1109/apmc.2008.4957921
https://doi.org/10.1109/apmc.2008.4957921
Publikováno v:
2008 IEEE MTT-S International Microwave Symposium Digest.
A high power SPDT antenna switch is designed and implemented using a standard 0.18um CMOS process. Multi-stack FETs structure with feed-forward capacitors in a Rx switch were chosen to achieve high power-handling capability of a Tx switch. Allowance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d74189743fb401e328d6258ea5dd1b1
https://doi.org/10.1109/mwsym.2008.4633226
https://doi.org/10.1109/mwsym.2008.4633226