Zobrazeno 1 - 10
of 143
pro vyhledávání: '"Minority carrier injection"'
Autor:
Kollmitzer, Michael
The increase in complexity in todays automotive products is driven by the trend to implement new features in the area of safety, comfort and entertainment. This significantly raises the safety requirements of new ICs and the identification of possibl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0096d73bdc8631718cef2fdcad2ee242
https://www.repo.uni-hannover.de/handle/123456789/9463
https://www.repo.uni-hannover.de/handle/123456789/9463
Publikováno v:
Superlattices and Microstructures
Superlattices and Microstructures, Elsevier, 2017, 101, pp.529-536. ⟨10.1016/j.spmi.2016.11.011⟩
Superlattices and Microstructures, Elsevier, 2017, 101, pp.529-536. ⟨10.1016/j.spmi.2016.11.011⟩
International audience; It is shown that deep level transient spectroscopy can be carried out on Schottky diodes to investigate, in addition to majority carrier traps, minority carrier traps. This is possible thanks to the application of a large reve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::48abc09a06f4a80ed51f4b91dc976b12
https://doi.org/10.1016/j.spmi.2016.11.011
https://doi.org/10.1016/j.spmi.2016.11.011
Autor:
Xiaohong Zhang, Xiaofeng Wu, Peng Xiao, Wei Deng, Jinwen Wang, Ruofei Jia, Jiansheng Jie, Jing Pan
Publikováno v:
Advanced Functional Materials. 31:2100202
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bca5ecbba25d75f7003e43cfce83c67
https://doi.org/10.1002/adfm.202100202
https://doi.org/10.1002/adfm.202100202
Autor:
Hongyu Yu, Wengqiang Yang, Ya Wang, Thomas P. Russell, Zheng-Hong Lu, Hang Zhou, Rui Zhu, Lichen Zhao, Taoyu Zou, Xiao-Yu Yang, Rui Su, Beng Xiang, Deying Luo
Publikováno v:
Advanced Functional Materials. 30:2001692
Author(s): Luo, D; Zou, T; Yang, W; Xiang, B; Yang, X; Wang, Y; Su, R; Zhao, L; Zhu, R; Zhou, H; Russell, TP; Yu, H; Lu, ZH | Abstract: Controlling defects and energy-band alignments are of paramount importance to the development of high-performance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cba68dd56c9fdfdeb3cd13b3869eb85
https://doi.org/10.1002/adfm.202001692
https://doi.org/10.1002/adfm.202001692
Akademický článek
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Autor:
B.N. Mukashev, Kh. A. Abdullin
Publikováno v:
Physica B: Condensed Matter. 407:2508-2511
DLTS and thermally stimulated capacitance (TSCap) studies of α-particle irradiated p-Si were undertaken to obtain additional information about the self-interstitial related defect E 1= E c −0.39 eV. The E1 defect can be retained frozen up to room
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bc2d88b9836617f0a20d773c3e0e5f9
https://doi.org/10.1016/j.physb.2012.03.057
https://doi.org/10.1016/j.physb.2012.03.057
Autor:
Kazumi Wada, Hiroshi Fushimi
Publikováno v:
IEEJ Transactions on Electronics, Information and Systems. 128:838-845
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9a4beb2ec32279ecee3fc42ae36ef72c
https://doi.org/10.1541/ieejeiss.128.838
https://doi.org/10.1541/ieejeiss.128.838
Publikováno v:
Physica B: Condensed Matter. :503-506
Irradiation of p-GaAs grown by low-pressure metal-organic chemical-vapor deposition (LP-MOCVD) with α-particles from the 241Am source has been performed at room temperature. At least seven radiation-induced deep-level defects at energy positions Ev+
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e9028758cc0fa68dec7eac281412952
https://doi.org/10.1016/j.physb.2007.09.009
https://doi.org/10.1016/j.physb.2007.09.009
Publikováno v:
Microelectronics Journal. 37:804-811
This paper deals with the evaluation of a substrate-thinning technique as a way to control the substrate current issues. A test structure has been realized on a Smart Power Technology. Comprehension of the phenomena has been validated thanks to TCAD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c05fa55800ac785cd49873cb7772780
https://doi.org/10.1016/j.mejo.2005.10.016
https://doi.org/10.1016/j.mejo.2005.10.016
Publikováno v:
Microelectronic Engineering. 72:160-164
A three-parameter model is developed and demonstrated for extracting the capacitance and parallel resistance for leaky capacitors. The technique combines dc and ac measurements tn extract these values. The range over which the measurement is valid va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae4e0d5d810fb87568d786a1f238124b
https://doi.org/10.1016/j.mee.2003.12.050
https://doi.org/10.1016/j.mee.2003.12.050