Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Minna Nieminen"'
We present a digital laboratory safety training platform called AALTOLAB which we have developed to address the need for more flexible and engaging ways to teach laboratory safety for chemical engineers. AALTOLAB consists of an interactive, web-based
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b6668904f1748edb3f98a6018e8548d
https://aaltodoc.aalto.fi/handle/123456789/101680
https://aaltodoc.aalto.fi/handle/123456789/101680
Publikováno v:
Microporous and Mesoporous Materials. 121:79-83
The postsynthetic functionalization of mesoporous silica MCM-41 by vapor phase deposition of 3-aminopropyltrimethoxysilane is investigated as an alternative to the common practice of depositing from toluene. Particular emphasis is given to the possib
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::feb16a9dc1262ef6c1cb9c8c0f2ca486
https://doi.org/10.1016/j.micromeso.2009.01.006
https://doi.org/10.1016/j.micromeso.2009.01.006
Publikováno v:
J. Mater. Chem.. 16:563-569
Amorphous YScO3 thin films have been deposited by atomic layer deposition using two types of volatile metal precursors, viz. β-diketonate-type metal complexes M(thd)3 (M = Y, Sc; thd = 2,2,6,6-tetramethyl-3,5-heptanedionato) and organometallic cyclo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::395d5f8a23b5558aa99b27e4d11e13e0
https://doi.org/10.1039/b514083h
https://doi.org/10.1039/b514083h
Publikováno v:
University of Helsinki
Magnesium aluminate thin films were grown by atomic layer deposition at 100–400 °C onto soda lime glass and Si(100) substrates. (C5H5)2Mg, (CH3)3Al and H2O were used as precursors. Crystallinity and surface morphology of the films were characteriz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e2a2783dcf661fb33f191472b4803735
https://doi.org/10.1016/j.tsf.2004.02.078
https://doi.org/10.1016/j.tsf.2004.02.078
Publikováno v:
Nieminen, M, Lehto, S & Niinistö, L 2001, ' Atomic layer epitaxy growth of LaGaO 3 thin films ', Journal of Materials Chemistry, no. 12, pp. 3148-3153 . https://doi.org/10.1039/B105978P
Lanthanum gallate thin films were deposited by atomic layer epitaxy (ALE) at 325–425 °C from β-diketonate-type precursors, La(thd)3 and Ga(acac)3, and ozone. Films were grown on soda lime glass, Si(100), MgO-buffered Si(100), sapphire, MgO(100),
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::445a11289a0357fbc40f75f0f2022736
https://doi.org/10.1039/b105978p
https://doi.org/10.1039/b105978p
Publikováno v:
Chemistry of Materials. 13:4701-4707
Scandium oxide thin film deposition by atomic layer epitaxy was studied at 175−500 °C using Sc(thd)3 (thd = 2,2,6,6-tetramethyl-3,5-heptanedione) and (C5H5)3Sc as scandium precursors. A constant deposition rate of 0.125 A (cycle)-1 was observed at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77199f83bbed92ff26f2351dadfce1c2
https://doi.org/10.1021/cm011138z
https://doi.org/10.1021/cm011138z
Publikováno v:
Applied Surface Science. 174:155-166
Lanthanum oxide thin film deposition by atomic layer epitaxy (ALE) was studied at 180–425°C on soda-lime glass and Si(1 0 0) substrates using a β-diketonate type precursor La(thd) 3 and ozone. The chemical constituents of the films were analyzed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28a18bef9af7d28df9e152223e16ea7e
https://doi.org/10.1016/s0169-4332(01)00149-0
https://doi.org/10.1016/s0169-4332(01)00149-0
Publikováno v:
Journal of Materials Chemistry. 11:2340-2345
LaAlO3 thin films were deposited by atomic layer epitaxy (ALE) from β-diketonate-type precursors La(thd)3 and Al(acac)3. Ozone was used as an oxygen source. Films were grown on soda lime glass, Si(100), MgO-buffered Si(100), sapphire and SrTiO3(100)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86d7791e266508d8d61b780077346ed7
https://doi.org/10.1039/b102677c
https://doi.org/10.1039/b102677c
Autor:
Minna Nieminen, Lauri Niinistö
Publikováno v:
Fresenius' Journal of Analytical Chemistry. 364:224-227
X-ray fluorescence spectrometry (XRF) was applied to determine aluminium in AlCl3- and Al2O3-modified silica catalyst supports that were prepared by gas-solid reactions in an atomic layer epitaxy (ALE) process using aluminium chloride or aluminium ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49f4302152b354974da7a11972976fc1
https://doi.org/10.1007/s002160051328
https://doi.org/10.1007/s002160051328
Publikováno v:
Applied Surface Science. 112:243-250
LaCoO 3 thin films have been deposited in a flow-type atomic layer epitaxy (ALE) reactor from La(thd) 3 and Co(thd) 2 , (thd = 2,2,6,6-tetramethyl-3,5-heptadione) precursors using ozone as oxygen source. Films were grown on both soda lime and Corning
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22dc895cacbaf5392a0cf465d5d92efd
https://doi.org/10.1016/s0169-4332(96)01001-x
https://doi.org/10.1016/s0169-4332(96)01001-x