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pro vyhledávání: '"Minkyeong Nam"'
Publikováno v:
Advanced Materials Interfaces, Vol 11, Iss 11, Pp n/a-n/a (2024)
Abstract The utilization of a zirconium oxide (ZrO2) thin film as the insulator in a metal–insulator–semiconductor (MIS) capacitor to enhance the characteristics of thin‐film transistors is investigated. Although the high crystallinity of ZrO2
Externí odkaz:
https://doaj.org/article/b8b52f41151b4e799b7ec864a1afc545