Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Minjun Song"'
Publikováno v:
Journal of Nanoscience and Nanotechnology. 21:4277-4284
In this study, we investigated the threshold voltage (Vth) instability of solution-processed indium zinc oxide (IZO) thin film transistors (TFTs) prior to and after negative bias illumination stress (NBIS) with varying carrier suppressors (Ga, Al, Hf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::71227fe5989f7a0f5b215f95cf3065b6
https://doi.org/10.1166/jnn.2021.19392
https://doi.org/10.1166/jnn.2021.19392
Autor:
Bohyeon Jeon, Pyungho Choi, Byoungdeog Choi, Kihwan Kim, Hyo Jung Kim, Junehwan Kim, Jong Woo Park, Minjun Song, Jang-Kun Song, Jungmin Park, Soonkon Kim
Publikováno v:
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. 20:474-478
In this paper, we introduce a method enabling faster and more innovative analysis of the channel characteristics of amorphous indium-gallium- zinc oxide (a-IGZO) thin film transistors (TFTs) manufactured on flexible substrates through electrical prop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f35098649227c1c9bec17d5d5e8241f6
https://doi.org/10.5573/jsts.2020.20.5.474
https://doi.org/10.5573/jsts.2020.20.5.474
Autor:
Hyo-Jung Kim, Ki-Hwan Kim, Yongjo Kim, Minjun Song, Youngmi Cho, Byungdeog Choi, Hyunguk Cho, Soonkon Kim
Publikováno v:
SID Symposium Digest of Technical Papers. 51:1338-1341
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35c8fe34fc5de7d44cafd608a9eca3b0
https://doi.org/10.1002/sdtp.14131
https://doi.org/10.1002/sdtp.14131
Autor:
Jang-Kun Song, Jongwoo Park, Minjun Song, Pyungho Choi, Hyo-Jung Kim, Soonkon Kim, Byoungdeog Choi, Hyuncheol Hwang, Ki-Ju Im, Taeyoung Khim, Sangmin Lee
Publikováno v:
IEEE Electron Device Letters. 41:737-740
In this paper, we propose a novel mechanism for the $\text{V}_{{\text {th}}}$ shift of amorphous-indium gallium zinc oxide (a-IGZO) thin film transistors under negative bias illumination stress (NBIS). Three kinds of IGZO TFTs with different gate die
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bf1bd95471b9156f29e87102db6eb4a
https://doi.org/10.1109/led.2020.2981176
https://doi.org/10.1109/led.2020.2981176
Publikováno v:
ECS Meeting Abstracts. :1953-1953
We conducted experimental and quantitative studies on the effects of off-state bias stress of the p-type polycrystalline silicon thin film transistors (TFTs) on flexible substrate and presented a new degradation model using TCAD simulation. In the of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::808be0dc994d2655c78b7dcefdca90f6
https://doi.org/10.1149/ma2020-02281953mtgabs
https://doi.org/10.1149/ma2020-02281953mtgabs
Autor:
Minjun Song, Byoungdeog Choi
Publikováno v:
Proceedings of the International Display Workshops. :721
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0722dc530f6e1faeb9113cd6dcdbaa9e
https://doi.org/10.36463/idw.2019.0721
https://doi.org/10.36463/idw.2019.0721