Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Minhyun Jin"'
Publikováno v:
Sensors, Vol 20, Iss 13, p 3649 (2020)
In this paper, we propose a complementary metal-oxide-semiconductor (CMOS) image sensor (CIS) that has built-in mask circuits to selectively capture either edge-detection images or normal 8-bit images for low-power computer vision applications. To de
Externí odkaz:
https://doaj.org/article/9d95783bd0fd4729b69a34f7fae04ae4
Autor:
Jaenam Kim, Joo-Hyoung Kim, Yun-Tzu Chang, Jihoon Park, Minhyun Jin, Vladimir Pejović, Epimitheas Georgitzikis, Steven Thijs, Itai Lieberman, Yunlong Li, Paul Heremans, Paweł Malinowski, Jung-Hoon Chun, Jiwon Lee
Publikováno v:
IEEE Transactions on Electron Devices. 70:3155-3159
Publikováno v:
IEEE Electron Device Letters. 42:461-464
In this letter, we propose a heat-path design for releasing heat confined in FinFETs. Conductive material stacks consisting of metals and vias on silicon can be good heat paths that lower junction temperature. However, they also increase parasitic ca
Publikováno v:
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. 21:68-72
Publikováno v:
2021 IEEE Region 10 Symposium (TENSYMP).
Conventionally, conductive material stacks composed of many metals and holes on silicon devices have kept excellent thermal paths which reduces junction temperature. However, according to the development of CMOS process technology, parasitic capacita
Publikováno v:
IEEE Transactions on Nanotechnology. 18:51-54
In this letter, we develop a compact thermal model that can predict changes in the threshold voltage and drain current because of the junction temperature, Δ $T_{J}$ , and its effect on a circuit performance by using circuit simulators. In addition,
Publikováno v:
Electronics; Volume 11; Issue 6; Pages: 877
In this paper, a flip-flop (FF) that minimizes the transition of internal nodes by using a dual change-sensing scheme is discussed. Further, in order to reduce power consumption, a new technique to eliminate short-circuit currents is described. The p
Publikováno v:
Sensors (Basel, Switzerland)
Sensors, Vol 20, Iss 3649, p 3649 (2020)
Sensors, Vol 20, Iss 3649, p 3649 (2020)
In this paper, we propose a complementary metal-oxide-semiconductor (CMOS) image sensor (CIS) that has built-in mask circuits to selectively capture either edge-detection images or normal 8-bit images for low-power computer vision applications. To de
Publikováno v:
2019 34th International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC).
Recently, many kinds of tremendous requirements are needed for smart Internet of Things (IoT). Among them, an intelligent and self-working CMOS image sensor (CIS) is a key component to satisfy the specifications of smart IoT. In this paper, therefore
Publikováno v:
ISOCC
In this paper, we propose a nano-ampere current sensing technique for organic light-emitting diode (OLED) mobile displays. The nano-ampere current sensing system consists of a current integrator and an 8-bit single-slop analog to digital converter (S