Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Minhwan Jeon"'
Autor:
Jin-Hyung Kim, Chang-Rok Moon, Kijoong Yoon, Minsung Heo, Jaehak Lee, I.S. Park, Minhwan Jeon, Jung-Chak Ahn, Bum-Suk Kim, Inho Ro, Hyun-Chul Kim, Taek-Soo Jeon, Jong-uk Kim, Yun-Ki Lee, Kwang-Min Lee, Dongyeon Daniel Kang, Yoon Kisang, Hye Yeon Park, Jungho Park, In-sung Joe, Changkyu Lee, Eunyoung Jo, Dami Park, Chanho Park, JaeSung Hur, Hyoungsub Kim, Chong Kwang Chang, Minkwan Kim, Byun Kyung Rae, Seokjin Kwon, Tae-Hoon Kim
Publikováno v:
VLSI Circuits
Sub-micron pixels have been widely adopted in recent CMOS image sensors to implement high resolution cameras in small form factors, i.e. slim mobile-phones. Even with shrinking pixels, customers demand higher image quality, and the pixel performance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::737be7a6d2c190cf5f9ed199bc4ad138
https://doi.org/10.23919/vlsicircuits52068.2021.9492339
https://doi.org/10.23919/vlsicircuits52068.2021.9492339
Publikováno v:
Animals, Vol 14, Iss 20, p 3039 (2024)
This study identified the effects of substituting fishmeal (FM) with soy protein concentrate (SPC) supplemented with lysine and methionine in the olive flounder (Paralichthys olivaceus) diet on the expression of genes related to growth, stress, immun
Externí odkaz:
https://doaj.org/article/4b9b7e468dac47ebb64bfdaf73286122
Publikováno v:
Journal of Nanoscience and Nanotechnology. 15:8401-8406
In this study, we suggest a polarity-selective in-situ thermal etching and re-growth process for the fabrication of high quality Al terminated AIN epilayers by high temperature metalorganic chemical vapor deposition. Mixed-polar AIN layers grown on a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::93ad65ecf8ff0d702399cb5757363ab4
https://doi.org/10.1166/jnn.2015.11446
https://doi.org/10.1166/jnn.2015.11446
Publikováno v:
Journal of Nanoscience and Nanotechnology. 15:5144-5147
This study investigates the crystallographic polarity transition of AIN layers grown by high temperature metalorganic chemical vapor deposition (HT-MOCVD), with varying trimethylaluminum (TMAI) pre-flow rates. AIN layers grown without TMAI pre-flow h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::90ff695438abe30fcc7769be14594bc5
https://doi.org/10.1166/jnn.2015.10368
https://doi.org/10.1166/jnn.2015.10368
Publikováno v:
2016 IEEE International Symposium on Antennas and Propagation (APSURSI).
A design concept of the loop antenna on the metal frame of a smartwatch device for GPS, Bluetooth and Wi-Fi 5 GHz is introduced. The antenna was designed with a 1.5 mm thick, circular metal frame with a diameter of 55 mm. The system ground of a smart
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8683822a5dac49b82d5867bca2204f0f
https://doi.org/10.1109/aps.2016.7696795
https://doi.org/10.1109/aps.2016.7696795
Autor:
TaiZhe, Lin, BaoTao, Kang, MinHwan, Jeon, Craig, Huffman, JeaHoo, Jeon, SungJoo, Lee, Wei, Han, JinYong, Lee, SeHan, Lee, GeunYoung, Yeom, KyongNam, Kim
Publikováno v:
ACS applied materialsinterfaces. 7(29)
Two-dimensional (2D) metal dichalcogenides like molybdenum disulfide (MoS2) may provide a pathway to high-mobility channel materials that are needed for beyond-complementary metal-oxide-semiconductor (CMOS) devices. Controlling the thickness of these
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::521a7098e166733c75ec089347af220b
https://pubmed.ncbi.nlm.nih.gov/26091282
https://pubmed.ncbi.nlm.nih.gov/26091282
Publikováno v:
Japanese Journal of Applied Physics. 54:081001
This study reports on the growth and characterization of AlN/AlxGa1−xN superlattices (SLs) for reduction of threading dislocations to grow high quality AlN layer. Insertion of optimized SLs is shown to effectively reduce the dislocation density, th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81fde6c44eefa07feaf91deaed4ff723
https://doi.org/10.7567/jjap.54.081001
https://doi.org/10.7567/jjap.54.081001
Publikováno v:
Japanese Journal of Applied Physics. 54:051002
The self-compensation effect in Si-doped Al0.55Ga0.45N layers was investigated using different SiH4/III ratios. The degree of compressive strain changed with SiH4 flow rate during growth. With a low SiH4/III ratio of 2.46 × 10−6, compressive strai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5164c6bed5ed0319f7595aa1982417e6
https://doi.org/10.7567/jjap.54.051002
https://doi.org/10.7567/jjap.54.051002
Publikováno v:
Japanese Journal of Applied Physics; May2015, Vol. 54 Issue 5, p1-1, 1p