Zobrazeno 1 - 10
of 107
pro vyhledávání: '"Minhan Mi"'
The Dual-Mode Integration of Power Amplifier and Radio Frequency Switch Based on GaN Dual-Gate HEMTs
Autor:
Meng Zhang, Haozheng Wang, Ling Yang, Bin Hou, Mei Wu, Qing Zhu, Minhan Mi, Xu Zou, Chunzhou Shi, Qian Yu, Wenliang Liu, Hao Lu, Xiaohua Ma, Yue Hao
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 39-45 (2024)
In this paper, an integrated device which realized the dual-mode integration of power amplifier (PA) and radio frequency (RF) switch based on GaN dual-gate (DG) structure is designed and fabricated. The integrated device provides two working modes an
Externí odkaz:
https://doaj.org/article/f8d337b3abfe4a1d9b418327afbb65bd
Autor:
Can Gong, Minhan Mi, Yuwei Zhou, Pengfei Wang, Yilin Chen, Jielong Liu, Yutong Han, Sirui An, Siyin Guo, Meng Zhang, Qing Zhu, Mei Yang, Xiaohua Ma, Yue Hao
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 72-77 (2023)
In this work, high performance InAlN/GaN HEMT based on the n+GaN regrown ohmic contact with n+GaN contact ledge structure is proposed. The regrown ohmic contact of InAlN/GaN HEMT is formed by MBE n+GaN regrowth and self-stopping etching, which makes
Externí odkaz:
https://doaj.org/article/77231092cf96498cb56106544ab5e5fe
Autor:
Ling Yang, Hao Lu, Meng Zhang, Xuerui Niu, Chuzhou Shi, Bin Hou, Minhan Mi, Mei Wu, Qing Zhu, Yang Lu, Ling Lv, Kai Cheng, Xiaohua Ma, Yue Hao
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 474-480 (2022)
In this paper, the impact of ohmic structure on channel-to-channel (C2C) coupling effect in InAlN/GaN double channel (DC) HEMTs is systematically analyzed and studied. For the un-recessed ohmic structure, the electrons in the upper channel can easily
Externí odkaz:
https://doaj.org/article/d3e3289985ee43ca9419578991dc07c9
Autor:
Meng Zhang, Yilin Chen, Siyin Guo, Hao Lu, Qing Zhu, Minhan Mi, Mei Wu, Bin Hou, Ling Yang, Xiaohua Ma, Yue Hao
Publikováno v:
Micromachines, Vol 14, Iss 8, p 1513 (2023)
In this study, AlGaN/GaN nanochannel high-electron-mobility transistors (HEMTs) with tri-gate (TGN-devices) and dual-gate (DGN-devices) structures were fabricated and investigated. It was found that the peak value of the transconductance (Gm), curren
Externí odkaz:
https://doaj.org/article/2bc46954d8aa4e9da27d87b8a3aba5ed
Autor:
Yuwei Zhou, Jiejie Zhu, Minhan Mi, Meng Zhang, Pengfei Wang, Yutong Han, Sheng Wu, Jielong Liu, Qing Zhu, Yilin Chen, Bin Hou, Xiaohua Ma, Yue Hao
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 756-762 (2021)
In this work, low voltage RF power capability on AlGaN/GaN and InAlN/GaN HEMTs is analyzed from the perspective of DC and pulse characteristics, for terminal applications whose operating voltage is usually in the range of 3 to 15 V. Device fabricatio
Externí odkaz:
https://doaj.org/article/227554a6754448f8bb93977cd552da71
Autor:
Jingshu Guo, Jiejie Zhu, Siyu Liu, Kai Cheng, Qing Zhu, Pengfei Wang, Kai Liu, Ziyue Zhao, Lingjie Qin, Yuxi Zhou, Minhan Mi, Yue Hao, Xiaohua Ma
Publikováno v:
IEEE Electron Device Letters. 44:590-593
Autor:
Yuwei Zhou, Minhan Mi, Yutong Han, Pengfei Wang, Yilin Chen, Jielong Liu, Can Gong, Mei Yang, Meng Zhang, Qing Zhu, Xiaohua Ma, Yue Hao
Publikováno v:
IEEE Transactions on Electron Devices. 70:43-47
Publikováno v:
IEEE Electron Device Letters. 43:1838-1841
Autor:
Siyu Liu, Jiejie Zhu, Jingshu Guo, Kai Cheng, Minhan Mi, Lingjie Qin, Jielong Liu, Fuchun Jia, Hao Lu, Xiaohua Ma, Yue Hao
Publikováno v:
IEEE Electron Device Letters. 43:1621-1624
Autor:
Jielong Liu, Minhan Mi, Jiejie Zhu, Pengfei Wang, Yuwei Zhou, Siyu Liu, Qing Zhu, Meng Zhang, Bin Hou, Hong Wang, Ling Yang, Xiaohua Ma, Yue Hao
Publikováno v:
IEEE Transactions on Electron Devices. 69:4188-4193