Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Minh Van Ngo"'
Publikováno v:
Journal of Materials and Engineering Structures, Vol 9, Iss 4, Pp 579-587 (2022)
As regard to cementitious composite materials added a certain dosage of fiber, estimation of tensile constitutive law through inverse analysis methods is no longer extraordinary. However, development or improvement to achieve an effective method for
Externí odkaz:
https://doaj.org/article/84285dc8145a4197b19247945bbdf6cd
Publikováno v:
Journal of Materials and Engineering Structures, Vol 9, Iss 4, Pp 427-434 (2022)
Shrinkage and creep effect significantly to the long-term deflection of prestressed concrete bridge. The proper shrinkage and creep models should be developed to meet the requirements of deflection effect calculation. There are many models has been r
Externí odkaz:
https://doaj.org/article/93144141e9284397b460bc694038cc20
Akademický článek
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Publikováno v:
The AUN/SEED-Net Joint Regional Conference in Transportation, Energy, and Mechanical Manufacturing Engineering ISBN: 9789811919671
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d2b90975da6332293188d2ecbae1b9d
https://doi.org/10.1007/978-981-19-1968-8_3
https://doi.org/10.1007/978-981-19-1968-8_3
Autor:
Christy Mei-Chu Woo, Paul L. King, Minh Van Ngo, James N. Pan, Ming-Ren Lin, Paul R. Besser, J. Bernard, Bryan Tracy, Qi Xiang, Chih-Yuh Yang, Ercan Adem, J. Pellerin
Publikováno v:
IEEE Transactions on Electron Devices. 50:2456-2460
This letter reports the first replacement (Damascene) metal gate pMOSFETs fabricated with Ni/TaN, Co/TaN stacked electrode, where Ni or Co is in direct contact with the gate SiO/sub 2/, to adjust the electrode metal work function and TaN is used as t
Autor:
Ming-Ren Lin, Paul R. Besser, James N. Pan, Minh Van Ngo, Qi Xiang, Christy Mei-Chu Woo, J. Pellerin
Publikováno v:
IEEE Electron Device Letters. 24:547-549
This work describes a low-temperature metal annealing technique that can be a helpful tool for fabricating the gate electrode of replacement metal gate CMOS transistors. The goal of the technique is to form doped metal (TaSiN, TiSiN, TaCN, TaPN, etc.
Publikováno v:
2006 IEEE International Symposium on Semiconductor Manufacturing.
The effect of hydrogen in a PECVD SiN film used as a copper cap in Flash memory devices was studied. The SiN film is known to have a significant effect on electromigration; however, the SiN can also have a significant effect on the electrical perform
Autor:
Bin Yu, Ming-Ren Lin, James N. Pan, Qi Xiang, Jung-Suk Goo, Paul R. Besser, Minh Van Ngo, Christy Mei-Chu Woo
Publikováno v:
2003 International Symposium on VLSI Technology, Systems and Applications. Proceedings of Technical Papers. (IEEE Cat. No.03TH8672).
This letter describes a replacement (damascene) metal gate NMOSFET with TaSiN and PVD TaN as stacked gate electrode. The goal is to perform the "gate electrode engineering" in order to change the work function and the threshold voltage of the transis
Autor:
Christy Mei-Chu Woo, James N. Pan, Bryan Tracy, Stephen Robie, Ming Ren Lin, Qi Xiang, Ercan Adem, Minh Van Ngo
Publikováno v:
MRS Proceedings. 745
The metal gate process becomes a promising candidate for sub-65nm CMOS, due to the elimination of polysilicon depletion effects, and the possibility of adjusting the CMOS threshold voltage without more threshold implants. Our goal is to process mteal
Publikováno v:
The American journal of geriatric cardiology. 10(2)
OBJECTIVE The purpose of the study was to identify clinical predictors of progression of aortic stenosis. BACKGROUND The natural history of valvular aortic stenosis includes a latency period followed by an unpredictable progression. Recent investigat