Descriptor engineering in machine learning regression of electronic structure properties for 2D materials

Autor: Minh Tuan Dau, Mohamed Al Khalfioui, Adrien Michon, Antoine Reserbat-Plantey, Stéphane Vézian, Philippe Boucaud

Publikováno v: Scientific Reports, Vol 13, Iss 1, Pp 1-10 (2023)

Abstract We build new material descriptors to predict the band gap and the work function of 2D materials by tree-based machine-learning models. The descriptor’s construction is based on vectorizing property matrices and on empirical property functi

Externí odkaz: https://doaj.org/article/c29f366c343340218b5e43e9154f3826

The search for manganese incorporation in MoSe 2 monolayer epitaxially grown on graphene

Autor: Maxime Gay, Minh-Tuan Dau, Céline Vergnaud, Alain Marty, Frédéric Bonell, Hervé Boukari, Colin Paillet, Bérangère Hyot, Hanako Okuno, Pierre Mallet, Jean-Yves Veuillen, Olivier Renault, Matthieu Jamet

Publikováno v: Comptes Rendus. Physique
Comptes Rendus. Physique, Académie des sciences (Paris), 2021, 22 (4), pp.1-17. ⟨10.5802/crphys.69⟩
Comptes Rendus Physique
Comptes Rendus Physique, Centre Mersenne, 2021, 22 (S4), pp.1-17. ⟨10.5802/crphys.69⟩
Comptes Rendus. Physique, 2021, 22 (4), pp.1-17. ⟨10.5802/crphys.69⟩

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8ae41be35f7e164977757f92456c060f
https://doi.org/10.5802/crphys.69

New approach for the molecular beam epitaxy growth of scalable WSe

Autor: Céline, Vergnaud, Minh-Tuan, Dau, Benjamin, Grévin, Christophe, Licitra, Alain, Marty, Hanako, Okuno, Matthieu, Jamet

Publikováno v: Nanotechnology. 31(25)

The search for high-quality transition metal dichalcogenides mono- and multi-layers grown on large areas is still a very active field of investigation. Here, we use molecular beam epitaxy to grow WSe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::b3a6fcb16619dd6c5ae291cffe5bad88
https://pubmed.ncbi.nlm.nih.gov/32187582

Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe$_2$ few-layers on SiO$_2$/Si

Autor: Céline Vergnaud, Maxime Gay, Carlos Alvarez, Minh-Tuan Dau, François Pierre, Denis Jalabert, Christophe Licitra, Alain Marty, Cyrille Beigné, Benjamin Grévin, Olivier Renault, Hanako Okuno, Matthieu Jamet

Publikováno v: 2D Materials
2D Materials, IOP Publishing, 2019, 6 (3), pp.035019. ⟨10.1088/2053-1583/ab10f4⟩
2D Materials, 2019, 6 (3), pp.035019. ⟨10.1088/2053-1583/ab10f4⟩

Large-area growth of continuous transition metal dichalcogenides (TMDCs) layers is a prerequisite to transfer their exceptional electronic and optical properties into practical devices. It still represents an open issue nowadays. Electric and magneti

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9a10aac8a58f332656e0030086ed003f
http://arxiv.org/abs/1906.03014

Impact of a van der Waals interface on intrinsic and extrinsic defects in an MoSe 2 monolayer

Autor: Alain Marty, Hélène Le Poche, Matthieu Jamet, Minh Tuan Dau, Hanako Okuno, Carlos Alvarez, Pascal Pochet, C. Vergnaud

Publikováno v: Nanotechnology
Nanotechnology, Institute of Physics, 2018, 29 (42), pp.425706. ⟨10.1088/1361-6528/aad66f⟩
Nanotechnology, 2018, 29 (42), pp.425706. ⟨10.1088/1361-6528/aad66f⟩

International audience; In this work, we study growth and migration of atomic defects in MoSe 2 on graphene using multiple advanced transmission electron microscopy techniques to explore defect behavior in vdW heterostructures. A MoSe 2 /graphene vdW

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8cbd5c85bc90c6506c95d13867886cd3
https://hal-cea.archives-ouvertes.fr/cea-01962213